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이재곤,최시영 ( Jae Gon Lee,Sie Young Choi ) 한국센서학회 1996 센서학회지 Vol.5 No.6
The interfacial electrical properties of InSb MIS structure with low temperature remote PECVD SiO₂ have been characterized. The interface-state density at mid-bandgap of the MIS structure was about 1∼2 x 10^(11) cm^(-1)eV^(-1), when the SiO₂ film was deposited at 105℃. However, large amount of interface states and trap states were observed in the MIS structure fabricated at temperatures above 150℃. The time constant of 10 ^(-4)∼10^(-5) sec of interface states was extracted from G-V measurement. As the deposition temperature increased, the hysteresis of C-V curves were increased due to the high trap density.
Remote PECVD로 저온성장된 SiO₂ / InSb의 전기적 특성
이재곤(Jae-Gon Lee),박상준(Sang-Jun Park),최시영(Sie-Young Choi) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.3
InSb기판위에 remote PECVD장치를 이용하여, 200℃보다 낮은 저온에서 SiO₂막을 증착시켰다. 증착압력, 증착온도, 가스 유량비등의 공정변수들에 따른 SiO₂막의 물리적 전기적 특성을 조사하였으며, 155℃에서 증착시킨 SiO₂막을 이용하여 InSb MIS소자를 제조하여 전류-전압 및 정전용량-전압 특성을 77K에서 측정하였다. AES 분석 결과, SiO₂막내부 원자들의 화학조성비가 일정하게 유지되었으며, 기판원자들의 외부 확산이 거의 없었다. 제조된 MIS소자의 전류밀도는 0.75㎹/㎝에서 6.26㎁/㎠의 낮은 전류밀도를 나타내었으며, 항복전압 강도는 약 1 ㎹/㎝ 이었다. 1 MHz C-V측정으로부터 계산된 중간 에너지 대역폭에서의 계면 상태밀도가 5.54×10¹¹ ㎝^(-2)eV^(-1)으로 나타났다. SiO₂ insulator layers on InSb have been prepared by remote PECVD system at a low temerature below 200℃. The effects of deposition pressure, temperature, and gas flow ratio on the physical and electrical characteristics of the SiO₂ were studied. The InSb MIS device using SiO₂ was fabricated and measured its current-voltage and capacitance-voltage characteristics at 77K. The films evaluated Auger electron spectroscopy showed that composition atoms were distributed uniformaly throuhout the oxide film and the outdiffusion of substrate atoms into the oxide were few. The leakage current density of the MIS device was about 6.26 ㎁/㎠ at 0.75 ㎹/㎝, and the breakdown voltage was about 1 ㎹/㎝. The interface-state density at mid-bandgap extracted from 1MHz C-V measurement was about 5.54×10¹¹ ㎝^(-2)eV^(-1).
유중 용존수소 감지를 위한 Pd/Pt Gate MISFET 센서의 제조와 그 특성
백태성,이재곤,최시영 ( Tae Sung baek,Jae Gon Lee,Sie Yong Choi ) 한국센서학회 1996 센서학회지 Vol.5 No.4
The Pd/Pt gate MISFET type hydrogen sensors, for detecting dissolved hydrogen gas in the transformer oil, were fabricated and their characteristics were investigated. These sensors including diffused resistor heater and temperature monitoring diode were fabricated on the same chip by a conventional silicon process technique. The differential pair plays a role in minimizing the intrinsic voltage drift of the MISFET. To avoid the drift of the sensors induced by the hydrogen, the gate insulators of both FETs were constructed with double layers of silicon dioxide and silicon nitride. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pt and Pd double metal layers were deposited on the gate insulator. The hydrogen response of the Pd/Pt gate MISFET suggests that the proposed sensor can detect the dissolved hydrogen in transformer oil with 40mV/10ppm of sensitivity and 0.14mV/day of stability.
사각뿔 형태의 Mass 보상된 실리콘 압저항형 가속도 센서
손병복,이재곤,최시영 ( Byoung Bok Sohn,Jae Gon Lee,Sie Young Choi ) 한국센서학회 1994 센서학회지 Vol.3 No.1
When etching rectangular convex corners of silicon using anisotropic etchants such as KOH, deformation of the edges always occurs due to undercutting. Therefore, it is necessary to correct the mass pattern for compensation. Experiments for the compensation method to prevent this phenomenon were carried out. In the result, the compensation pattern of a regular square is suitable for acceleration sensors considering space. With this consequence, silicon piezoresistive acceleration sensor with compensated square pillar type of mass has been fabricated using SDB wafer.
Au 와 Pt 확산에 의한 실리콘 p+-n 접합 스위칭다이오드의 전기적 특성
정기복,이재곤,최시영 ( Kee Bock Chung,Jae Gon lee,Sie Young Choi ) 한국센서학회 1996 센서학회지 Vol.5 No.3
The silicon p^+-n junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at 800∼1010℃. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at 800∼1010℃ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at 1010℃ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon p^+-n junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at 1010℃ for one hour) was secondly annealed in an oxyen ambient at 800℃ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.
유중 용존수소 감지를 위한 Pd/NiCr 게이트 MISFET 센서의 제작
김갑식,이재곤,함성호,최시영 ( Gop Sick Kim,jae Gon Lee,Sung Ho Hahm,Sie Young Choi ) 한국센서학회 1997 센서학회지 Vol.6 No.3
The Pd/NiCr gate MISFET-type sensors were fabricated for detecting hydrogen dissolved in high-capacivity transformer oil. To improve stability and high concentration sensitivity of seztsvr, Pd/NiCr double catalysis metal gate was used. To reduce the serious gate voltage drift of the sensor induced by hydrogen, the gate insulators of 2 FETs were constructed with double layer of silicon dioxide and silicon nitride. The hydrogen sensitivity of the Pd/NiCr gate MISFET is about a half of Pd/Pt gate MISFET`s sensitivity but the Pd/NiCr gate MISFET has good stability and high concentration detectivity up to 1000 ppm.
MgO 기판 위에 올린 PLT 박막의 특성과 적외선 센서의 제작
조성현,정재문,이재곤,함성호,김기완,최시영 ( Sung Hyun Cho,Jae Mun Jung,Jae Gon Lee,Ki Wan Kim,Sung Ho Hahm,Sie Young Choi ) 한국센서학회 1997 센서학회지 Vol.6 No.3
The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using Pb0-rich target with oaring La contents. The substrate temperature, working pressure, Ar/O₂, and RF power dznsity of PLT thin films were 561℃, 10mTorr, 10/1, and 1.7W/㎠, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above 1.71 μC/㎠ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.
이재곤,박상준,김영일,최시영 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1
The insulated gate field effect transistor which is senstive to pressure has been fabricated. It consists of two pt-region of the source and the drain in the n-type silicon substrate, and the gate area. The gate electrode is the evaporated aluminium film on the micro-diaphragm resembling a pillbox which covers the drain, source, and gate oxide. The space between the gate oxide and the diaphragm is an air-gap. When the pressure is applied on the diaphragm, the diaphragm deflects and changes the gate capacitiance. As a result, the conductivity between source and drain is modulated. The fabrication processes utilized the conventional integrated circuit fabrication methods. The diaphragm is the SiNx film which is deposited by the PECVD (plasma enhanced chemical vapor deposition). The diaphragm has 200μm X 200μm of area and 3 μm of thickness. The characteristics of the sensor with pressure was non-linear. The threshold voltage was linearly increased with the increasing pressure. The pressure sensitivity of threshold voltage was 2.0 mV/mmHg.
이재곤,신장규,이정희,최시영 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The surfaces of (100) InSb were analyzed by Auger electron spectroscopy before and after sulfur treatment. The Auger spectrums for In_(2)O_(3), Sb_(2)O_(3), and elemental Sb were detected in the native oxide of InSb surface. After the sulfur treatment by ammonium sulfide((NH_(4))_(2)S_(x)), carbon content stays almost constant, but a great deal of the surface oxygen is replaced by sulfur, probably as a surface InSb-sulfide. For the case of the surfce which was sulfur treated during 2min at 25℃, carbon, oxygen and sulfur concentrations at surface were 11%, 6%, and 34%, respectively, and the In/Sb surface ratio was 1.0.