마이크로 블라스터를 이용한 실리콘 웨이퍼의 2단계 표면 텍스쳐링

조찬섭,정상훈,Cho, Chan-Seob,Jung, Sang-Hoon 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.3

Recently, the important issues of solar cell are low cost and high efficiency. Making low cost and high efficiency solar cell, there are many effects to development of inexpensive wafer, simplify process and improve optical, electrical properties. In this the study, the 2 step texturing method using micro blaster was developed to decrease reflection of incident lights. Air bridge electrode structure is suggested to expand the effective surface area and decrease the series resistance of finger electrode. The effects of 1 step texturing and 2 step texturing by micro blaster are compared. Reflectance of 1 step and 2 step texturing are measured 28.7% and 25.5%, respectively. The reflectance of 2 step texturing sample is lower about 3.2% than 1 step textured sample.

표면결함식각 및 반사방지막 열처리에 따른 태양전지의 효율 개선

조찬섭,김봉환,오정화,이병렬 한국반도체디스플레이기술학회 2014 반도체디스플레이기술학회지 Vol.13 No.2

In this study general solar cell production process was complemented, with research on improvement of solar cell efficiency through surface structure and thermal annealing process. Firstly, to form the pyramid structure, the saw damage removal (SDR) processed surface was undergone texturing process with reactive ion etching (RIE). Then, for the formation of smooth pyramid structure to facilitate uniform doping and electrode formation, the surface was etched with HND(HF : HNO3 : D.I. water=5 :100 : 100) solution. Notably, due to uniform doping the leakage current decreased greatly. Also, for the enhancement and maintenance of minority carrier lifetime, antireflection coating thermal annealing was done. To maintain this increased lifetime, front electrode was formed through Au plating process without high temperature firing process. Through these changes in two processes, the leakage current effect could be decreased and furthermore, the conversion efficiency could be increased. Therefore, compared to the general solar cell with a conversion efficiency of 15.89 %, production of high efficiency solar cell with a conversion efficiency of 17.24 % was made possible

대면적 플랙시블 기판용 회전자석형 마그네트론 소스 개발

조찬섭,이종현,윤성호,김봉환,김광태,정영철 한국반도체디스플레이기술학회 2012 반도체디스플레이기술학회지 Vol.11 No.2

In this study, a high performance rotary magnet type magnetron source for roll-to-roll sputter system has been developed. We analyzed the density of magnetic field as a function of size variation of the magnet which are in the center and edge of the target. The target efficiency showed the best result when the width of center magnet, the width of edge magnet, the angle of edge magnet, and the rotation angle of Yoke are 20mm, 10mm, 56o , and 16o, respectively. On the basis of the results of magnet array, Roll-to Roll magnetron source was fabricated and tested. The uniformity of the film thickness and that of the sheet resistance was ±1.62% and ±4.13%, and the resistivity was 2.79× 10-3 Ω․㎝.

RF 마그네트론 스퍼터링을 이용한 Si 기판상의 AlN 박막의 제조

조찬섭,김형표 한국반도체디스플레이기술학회 2004 반도체디스플레이기술학회지 Vol.3 No.2

Aluminum nitride(AlN) thin films were deposited on silicon substrate by reactive RF magnetron sputtering without substrate heating. We investigated the dependence of some properties for AlN thin film on sputtering conditions such as working pressure, $N_2$ concentration and RF power. XRD, Ellipsometer and AES has been measured to find out structural properties and preferred orientation of AlN thin films. Deposition rate of AlN thin film was increased with an increase of RF power and decreased with an increase of $N_2$ concentration. AES in-depth measurements showed that stoichiometry of Aluminium and Nitrogen elements were not affected by $N_2$ concentration. It has shown that low working pressure, low $N_2$ concentration and high RF power should be maintained to deposit AlN thin film with a high degree of (0002) preferred orientation.

HF 양극반응을 이용한 단결정 실리콘 미세구조의 제조

조찬섭,심준환,이석수,이종현,Cho, Chan-Seob,Sim, Jun-Hwan,Lee, Seok-Soo,Lee, Jong-Hyun 한국센서학회 1992 센서학회지 Vol.29 No.3

실리콘 기판을 HF용액 내에서 양극반응을 시켜 electropolishing법 또는 PSL 형성법으로 센서와 actuator에 유용한 다양한 모양의 실리콘 미세 기계구조를 제조하였다. 미세구조는 시편의 결정면에 관계없이 형성되었으며, 저농도 도핑된 단결정 실리콘이다. $n^{+}/n$ 실리콘 시편을 HF용액(20-48%)내에서 양극반응시켜 $n^{+}$ 영역에 선택적으로 PSL을 형성하였으며, HF농도, 반응전압 및 반응시간에 따른 PSL 형성의 특성을 조사였다. $n^{+}$ 영역에만 PSL이 형성되었으며 PSL의 다공도는 HF 농도 증가에 따라 감소하였으며, 반응전압에는 무관하였다. $n/n^{+}/n$형 구조를 이용하여 미세구조를 제조한 경우, 식각된 실리콘 표면이 균일하고 cusp가 제거되었으며, 미세구조의 두께는 전 영역을 통하여 n-epi.층의 두께로 일정하였다. HF용액(5 wt%)에서의 양극반응과 planar기술을 이용하여 가속도센서를 제조하여 기존의 IC 공정기술과 함께 사용이 가능함을 확인하였다. 또 모터의 회전자, 기어 등의 미세 기계구조를 PSL 형성법으로 제조하고 SEM 사진으로 조사하였다. Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic independent of crystal directions. Porous silicon layer(PSL) was formed selectively in $n^{+}$ region of $n^{+}/n$ silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in $n^{+}$ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of $n/n^{+}/n$ structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt%) and planar technology. The process was compatible with conventional It fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.

다공질 실리콘을 이용한 미세 기계구조의 제조

조찬섭,이봉희,이종현,최규만 경북대학교 센서기술연구소 1990 센서技術學術大會論文集 Vol.1 No.1

Micromechanical structures such as cantilever beams and bridge array (~μm thick, 100~500 μm long) were fabricated by formation of porous silicon layer. The beam array of n/p samples have irregular etched surface and cusp. On the otherhand, beams of n/n^(+)/n structure have clear etched surface and no cusp.

SOI MOS 소자의 제조 ( The Fabrication of SOI MOS device )

조찬섭,양천순,이종현 대한전자공학회 1989 대한전자공학회 학술대회 Vol.1989 No.11

스퍼터링을 이용한 PSL ( Porous Silicon Layer ) 의 균질성 개선 ( Uniformity Improvement of PSL Using Sputtering )

조찬섭,양천순,이종현 대한전자공학회 1989 대한전자공학회 학술대회 Vol.1989 No.7

HF 양극반응을 이용한 단결정 실리콘 미세구조의 제조

조찬섭,심준환,이석수,이종현 ( Chan Seob Cho,Jun Hwan Sim,Seok Soo Lee,Jong Hyun Lee ) 한국센서학회 1992 센서학회지 Vol.1 No.1

Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic, independent of crystal directions. Porous silicon layer(PSL) was formed selectively in n^+ region of n^+/n silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in n^+ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of n/n^+/n structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt %) and planar technology. The process was compatible with conventional IC fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.

단결정 실리콘 Microactuator 구조의 제작

조찬섭,신장규,류인식 경북대학교 전자기술연구소 1992 電子技術硏究誌 Vol.13 No.1

Porous silicon layer(PSL) was formed selectively in n^+ region of n^+/n silicon structure by anodic reaction in concentrated HF(20-48%) solution. PSL formation characteristics were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in n^+ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. Single-crystal silicon microactuator structures, such as gears, electrostatic motors, and linear actuators, were fabricated by PSL formation technique by anodic reaction in aqueous HF concentration. The microactuator structures were lightly doped single-crystal silicon and the formation was isotropic, independent of crystal directions.