결절성 경화증에 동반된 Subependymal Giant Cell Astrocytoma : 증례보고 Case Report

정창오,김수한,강삼석,이제혁,우정현 대한신경외과학회 1986 Journal of Korean neurosurgical society Vol.15 No.3

Subependymal giant cell astrocytoma is a very rare cerebral glioma and is known to be usually associated with tuberous sclerosis. We experienced a case of this tumor occured at the wall of both lateral ventricles near the foramen of Monro in a patient of tuberous sclerosis who had symtoms and signs of hydrocephalus and other complex manifestations of facial adenoma sebaceum, huge fibroma on occipital scalp and hamartoma on the right retina. The masses were removed completely through transcallosal approach with microsurgical technique. The literatures are also reviewed.

Kallikrein이 가토 뇌혈류에 미치는 영향

정창오,이용광,우정현 대한신경외과학회 1985 Journal of Korean neurosurgical society Vol.14 No.1

두개내압이 상승된 동물에서는 뇌혈류가 감소된다고 하나 이것이 뇌혈관의 반응성의 변화에 기인한 것인지에 대해서는 밝혀지지 않았다. 본실험에서는 urethane 마취 가토에서 kallikrein이 뇌혈류에 미치는 영향을 알아보고 두개내압 상승시의 kallikrein에 대한 뇌혈관의 반응성의 변화를 관찰해 보고자 하였다. 1) 총경동맥내 kallikrein은 뇌혈류의 증가, 혈압의 하강과 혈관저항의 감소를 일으켰다. 2) 뇌혈류량은 대조군 가토에 비해 두개내압 상승군 가토에서 유의하게 감소되었다. 3) Kallikcin투여후, 양군 공히 kallikrein투여량의 증가에 따라 뇌혈류량은 유의하게 증가하였으나, 두개내압상승군에서는 kallikrein의 혈류증대 효과가 유의하게 감약되었다. 4) Kallikrein의 혈압하강 효과는 양군 공히 투여량에 비례하여 커졌으며 양군간에 유의한 차이는 없었다. 5) 뇌혈관저항의 차이는 20㎜Hg의 두개내압 상승에 의해서 유의하게 증가되었으나 kallikrein에 의한 뇌혈관저항의 감소는 양군간에 유의한 차이가 없었다. 6) 이상의 실험결과로써 두개내압 상승은 뇌혈류에 대한 저항을 증가시켜 뇌혈류를 감소시키나, 뇌혈관의 kallikrein에 대한 반응성에는 변화를 가져오지 아니하였다. It is known that in animals with increased intracranial pressure the cerebral perfusion is curtailed, but whether it is caused by deranged responsiveness of the cerebral vessel is not known. Thus, it was attempted in this study to find out the changes of cerebrovascular response to Kallikrein in the rabbits with increased ICP (20㎜Hg) under urethane-anesthesia. 1) Intracarotid arterial kallikrein elicited increases in cerebral blood flow and decreases in blood pressure and arterial resistance. 2) Cerebral blood flow was significantly decreased in rabbits with increased ICP in comparison with the control rabbits. 3) Intraarterial kallikrein caused dose - depent increases of cerebral blood flow in both groups, but responses were significantly reduced in ICP-elevated group. 4) Kallikrein produced dose-dependent hypotensive effect in both groups with no significant difference between both groups. 5) Cerebrovascular resistance was greater in rabbits with elevated ICP (20㎜Hg), but kallikrein induced decreases of cerebrovascular resistance in both groups to the same degree. 6) Above results suggested that increased ICP reduces the cerebral blood flow by increasing cerebrovascular resistance, but it docs not modify the responsiveness of cerebral vessel to kallikrein.

기록물관리기관의 출판프로그램 현황과 특징 - 미국 NARA와 국가기록원 사례를 중심으로 -

정창오,이해영,Jung, Chang-Oh,Rieh, Hae-young 한국기록관리학회 2018 한국기록관리학회지 Vol.18 No.1

Both domestic and overseas archives provide various forms of outreach services including exhibitions, educations, and publications for extended users. In addition, the publication program is portable and has excellent effects within its scope. Providing various and useful information about archives is significant because they can be important resources for historical research and provide good guidelines for archival users. This study investigated the current status of the publication programs, types of publications, the publishing organizations, and publication process managed by both the National Archives and Records Administration (NARA) and the National Archives of Korea (NAK). Based on the comparison of the publishing programs of the two archives, the study analyzed the limitations of the publication program of NAK and gave suggestions for its improvement. 국내외 기록물관리기관에서는 기록정보의 이용을 확대하고자 전시, 교육 및 출판 등 다양한 형태의 확장서비스를 제공한다. 그 중 출판프로그램은 휴대성이 좋고 서비스 범위가 넓기 때문에 기록관의 기능을 알리는 홍보 효과가 뛰어나다. 또 소장 기록물의 검색도구, 역사적 가치가 있는 자료, 기록관리 업무 매뉴얼, 기록관 이용 안내 등 다양하고 유익한 정보를 이용자에게 효과적으로 전달할 수 있는 장점이 있어, 이에 대해 좀 더 면밀히 살펴볼 필요가 있다. 이 연구에서는 미국 NARA와 국내의 국가기록원의 출판프로그램 현황과 발간되고 있는 출판물의 유형을 조사하고, 출판 담당 조직 및 출판 과정 등을 자세히 비교 분석하였다. 여기에서 얻은 시사점을 기반으로 하여 국가기록원에서 진행되고 있는 출판프로그램의 한계점을 분석하고, 기록관리기관에서 앞으로 출판프로그램 운영 시 고려해야할 점들을 제안하였다.

뇌교에 발생한 악성 핍지신경교종 1례

김동환,정창오,김형일,이민철,Kim, Dong-Hwan,Chung, Chang-Oh,Kim, Hyung-Ihl,Lee, Min-Cheol 대한신경외과학회 2000 Journal of Korean neurosurgical society Vol.29 No.5

Primary anaplastic oligodendroglioma in brain stem is extremely rare. The authors present a case of a anaplastic oligodendroglioma arising from pons. A 29 year-old male patient was admitted because of cranial nerve palsy and visual disturbance. Neurological examination revealed bilateral sixth and left seventh cranial nerve plasies. Near-total resection of tumor mass was performed through midline suboccipital appraoch. Tumor was not related with choroid plexus and major vessels but it was firmly attached to the fourth ventricle floor. Tumor was considered to be arised from the tegmental portion of pons, growing dorsally into the 4th ventricle. Hitopathological exmination revealed primary anaplastic oligodendroglioma. Postoperative course was uneventful. The authors believe that this type of tumor with dorsally growing pattern can be successfully resected without major neurological deficit.

급성두부외상 환자의 혈액응고 장애

김규경,정창오,우정현 全南大醫大 1985 전남의대학술지 Vol.22 No.2

비정질 투명전도막 In2O3:Zn의 전기적 광학적 특성

노경헌,최문구,박승한,주홍렬,정창오,정규하,박장우 한국광학회 2002 한국광학회지 Vol.13 No.5

Development of a New Hybrid Silicon Thin-Film Transistor Fabrication Process

조성행,최용모,김형준,정유광,김시율,정창오 한국정보디스플레이학회 2009 Journal of information display Vol.10 No.1

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was de-veloped in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the active-matrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of 4~5 cm2/V.s and 0.5 cm2/V.s for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1” WXGA+(1440×900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

LCD 대형기판에서의 pure-Al Hillock특성 및 억제 방법에 대한 연구

백금주(Gumju Baek),이준신(Junsin Yi),정창오(Changho Jung),최동욱(Donwook Choi) 대한전기학회 2005 대한전기학회 학술대회 논문집 Vol.2005 No.11

국소성 피질이형성증의 외과적 치료

조관국,김형일,이민철,김근수,김연희,정창오,Neto, Pedro R. 대한신경외과학회 1996 Journal of Korean neurosurgical society Vol.25 No.12

Corticai Dysplasia(CD) is increasingly recognized as a cause of intractable epilepsy since it can be easily diagnosed with high resolution magnetic resonance imaging(MRI). We analyzed 24 consecutive cases with cortical dysplasia who underwent resective surgery at our institute between September. 1992 and December. 1995. MRI was demonstrated to be a decisive tool to identify CD in 16 cases(66.7%). However, the remaining 8 cases(93.9%) were confirmed to have CD based on histological examination. Location of the lesion included temporal(n=9), central(n=5), multilobar(n=5), and frontal(n=5). Intracranial EEG recording was performed to delineate the epileptogenic zons in 16 cases : subdural grid(10 cases) and depth electrode(6 cases). Resection was performed in temporal(n=9), frontal(n=7), central(n=5). parietal(n=1), and muitilobar(n=1). Complete resection was possible in 15(62.5%) and partial resection in 9(37.5%). Histological examination revealed dyslamination of cortical layers only(n=9), additional dysplastic neurons(n=7), and additional balloon cells(n=8). Surgical outcome was graded as seizure free(n=14 : 58.3%), rare seizures(n=3 : 12.5%). <50% reduction of seizure frequency(n=2 : 8%), and no change(n=5 : 20.8%) after mean follow-up of 12.7 months. The most influencing factor on the surgical outcome was the degree of completeness of resection(p<0.05). However. detectability of CD on MRI, severity of histological findings, age of seizure onset, and duration of seizure were not significantly related with the surgical outcome High suspicion is required to detect the CD among the patients with intractable epilepsy and surgical strategies should be well-planned to improve the surgical outcome in the patients with CD.

Characteristics of ZnO-based TFT Using La2O3 High-k Dielectrics

문연건,Sih Lee,박종완,김도현,Je-Hun Lee,정창오 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5

In order to reduce the operation voltage of the ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous La2O3 high-k dielectrics. ZnO, as a channel layer, and ITO, as source/drain electrodes, are deposited by DC magnetron sputtering, and La2O3 high-k dielectrics are deposited by using electron cyclotron resonance-atomic layer deposition (ECR-ALD). The deposition conditions of the gate insulator were optimized for leakage current, breakdown field, and high device performance. ZnO-TFTs with high-k La2O3 gate insulators exhibited good performance. The average channel mobility, turn-on voltage, ratio of the on current to the off current, and subthreshold swing were 0.77 cm2/Vs, −0.8 V, 105, and 1.2 V/decade, respectively. We compared the characteristics of a device consisting of La2O3 to those of a device consisting of SiO2 to examine their potential for use as high-k dielectrics in future TFT devices. In order to reduce the operation voltage of the ZnO-based thin film transistors (ZnO-TFTs), we fabricate devices using amorphous La2O3 high-k dielectrics. ZnO, as a channel layer, and ITO, as source/drain electrodes, are deposited by DC magnetron sputtering, and La2O3 high-k dielectrics are deposited by using electron cyclotron resonance-atomic layer deposition (ECR-ALD). The deposition conditions of the gate insulator were optimized for leakage current, breakdown field, and high device performance. ZnO-TFTs with high-k La2O3 gate insulators exhibited good performance. The average channel mobility, turn-on voltage, ratio of the on current to the off current, and subthreshold swing were 0.77 cm2/Vs, −0.8 V, 105, and 1.2 V/decade, respectively. We compared the characteristics of a device consisting of La2O3 to those of a device consisting of SiO2 to examine their potential for use as high-k dielectrics in future TFT devices.