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GaMnAs의 Be 병행 도핑에 의한 자기 수송 특성 연구
임완순,윤대식,우부성,고존서,김도진,임영언,김효진,김창수,김종오,Im W. S.,Yoon T. S.,Yu F. C.,Gao C. X.,Kim D. J.,Ibm Y. E.,Kim H. J.,Kim C. S.,Kim C. O. 한국재료학회 2005 한국재료학회지 Vol.15 No.1
Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.
임완순,조경철,조유석,최규석,김도진,Im, W.S.,Cho, K.C.,Cho, Y.S.,Choi, G.S.,Kim, D.J. 한국재료학회 2003 한국재료학회지 Vol.13 No.9
Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$+1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.
Be - codoped GaMnAs의 상온 강자성 및 자기 수송 특성
임완순(W. S. Im),우부성(F. C. Yu),고존서(C. X. Gao),김도진(D. J. Kim),김효진(H. J. Kim),임영언(Y. E. Ihm),김창수(C. S. Kim) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.6
Be-codoped GaMnAs layers were systematically grown via molecular beam epitaxy with varying Mn- and Be-flux. Mn flux was controlled to cover from solid solution type GaMnAs to precipitated GaMnAs. Two Be flux were chosen to exhibit semiconducting and metallic resistivity in the grown layers. The structural, electrical, and magnetic properties of GaAs:(Mn,Be) were investigated. The lightly Be-codoped GaMnAs layers showed ferromagnetism at room temperature, but did not reveal magnetotransport due to small magneto-resistance and high resistance of the matrix. However, room temperature magnetotransport could be observed in the degenerate Be-codoped GaMnAs layers, and which was assisted by the high conductivity of the matrix. The Be-codoping has promoted segregation of new ferromagnetic phase of MnGa as well as MnAs.