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분사증기법에 의해 형성된 ZnO 투명전도막에서 기판온도가 막 특성에 미치는 영향
이환수,주승기 한국세라믹학회 1994 한국세라믹학회지 Vol.31 No.4
ZnO transparent conducting thin film, which is a strong candidate for a transparent electrical contact in optoelectronic devices, was prepared by the vapour spraying method on the slide glass in nitrogen ambient at the atmospheric pressure. The structural, optical and electrical properties of films show a strong dependence on substrate temperature, and the optimum range of deposition temperature existed to obtain TCO(Transparent Conducting Oxide) films. At the higher temperatures, milky films were obtained. In such optimum range, the bandgap in ZnO films was determined from the spectral dependence of absorption coefficient and electrical characteristics were characterized with by the Hall mobility and carrier concentration.
DC Magnetron Sputtering 법에 의해 ATO 박막 제조시 스퍼터전력 및 산소유량이 전기적 성질에 미치는 영향
이환수,이혜용,윤천,Lee, Hwan-Soo,Lee, Hae-Yong,Yoon, Cheon 한국재료학회 1999 한국재료학회지 Vol.9 No.5
ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.