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이형주,박정배,권민찬,황기영,Lee, Hyung Ju,Park, Jeongbae,Kwon, Minchan,Hwang, Ki-Young 항공우주시스템공학회 2013 항공우주시스템공학회지 Vol.7 No.3
Hypersonic vehicles over Mach 5 need active cooling or thermal management systems to resolve excessive heating problems on their fuselage and engines. Endothermic fuels are widely used these days not only for the energy source but also for a heat sink. Therefore, fuel supply systems of hypersonic vehicles should be mainly composed of adiabatic fuel storage tank, cooling systems for the airframe and engine/nozzle, and fuel supply/injection systems in high pressure, high temperature, and high fuel flow rate conditions. This paper describes a conceptual design process of a hypersonic fuel supply system in order for designing a layout of the system, and identifying components and their specification requirements.
이형주,임성락,Lee, Hyeong-Ju,Im, Seong-Rak 한국정보처리학회 1995 정보처리논문지 Vol.2 No.6
기존의 유닉스 시스템에서는 모든 장치의 구동기가 커널 내부에 구현되어 있다. 따라서, 새로운 장치를 지원하기 위한 구동기를 추가하거나 기존의 구동기를 변경할 경우 커널 내부의 수정 작업이 불가피하다. 일반적으로 유닉스 시스템에서는 커널내 부의 수정 작업이 매우 어렵다. 본 논문에서는 이러한 어려움을 극복하기 위한 방법 으로써 사용자 수준의 단말기 구동기 모델을 제시한다. 제시한 모델의 기본 개념은 단말기 구동기를 사용자 수준의 서버로 구현함으로써 새로운 단말기 구동기의 동적 재구성을 제공하는 것이다. 제시한 모델의 타당성을 검증하기 위해 사용자 수준의 단말기 구동기를 SunOS 와 Linux 환경에서 구현하고, 그 성능을 평가하였다. In the conventional UNIX system, the all device driver realized in the kern el. Hence, whenever we want to add a new device driver or change the existin g device driver, the modification of kernel is unavoidable. Generally, it is very difficult to modify the kernel codes.As a method of overcoming this difficulty, a TTY device driver model of user-level is presented in this paper. The basic concept of this model is providing a dynamic reconfiguration of TTY device driver by realizing a user-level server process for TTY device driver. In order to verify the proper y of this model, a prototype of TTY device driver has been realized in the SunOS and Linux environment and evaluated its performance.
이형주,소진수,김홍근,Lee-Ku Kwac,안원찬 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.1
The use of an Al$_x$Ga$_{1-x}$As bound Ga$_z$In$_{1-z}$P strain compensation structure for optimum strain in latticed mismatched In$_{0.07}$GaAs/GaAsP$_{0.06}$ multiple quantum wells (MQWs) and its effect on the output power of an infrared light-emitting diode at 940-nm were investigated. A Ga$_{0.53}$InP tensile strain structure, which effectively compensate excessive compressive strain in the In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQWs, was inserted between a quantum well and a quantum barrier. The Al$_{0.2}$GaAs material was used as both a growth buffer and a balancing barrier for In$_{0.07}$GaAs/Al$_x$Ga$_{1-x}$As-bound Ga$_{0.53}$InP/GaAsP$_{0.06}$ MQWs. From photoluminescence (PL) measurements and X-ray diffraction (XRD) rocking curves, we verified that the Ga$_{0.53}$InP tensile strain barrier could effectively compensate the compressive strain of the In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQWs. In addition, a further increase in the PL intensity from the In$_{0.07}$GaAs/Al$_y$Ga$_{1-y}$As-bound Ga$_{0.53}$InP/GaAsP$_{0.06}$ MQWs was found after having adjusted the Al$_{0.2}$GaAs strain tuning barrier. This result was significantly supported by the stable balance of the energy bandgap structure in the developed MQWs. From fabricated IR-LEDs chips, the LED with an In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQW employing the Al$_{0.2}$GaAs-bound Ga$_{0.53}$InP strain compensation structure displayed a 48\% higher light output power as compared with a conventional LED. These results suggest that the use of an Al$_{0.2}$GaAs-bound Ga$_{0.53}$InP strain compensation structure effectively improved both the unbalanced strain and the unbalanced energy bandgap of lattice-mismatched In$_{0.07}$GaAs/GaAsP$_{0.06}$ MQWs for 940-nm IR-LEDs.
Ellipsometry를 이용한 193 nm photoresist에서의 물의 흡수 연구
이형주,이정환,서주빈,경재선,안일신,Lee, Hyoung-Joo,Lee, Jung-Hwan,Seo, Ju-Bin,Kyoung, Jai-Sun,An, Il-Sin 한국반도체디스플레이기술학회 2006 반도체디스플레이기술학회지 Vol.5 No.2
We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.