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Effect of Intermediate Metal on the Methanol Gas Sensitivity of ITO Thin Films
이학민,허성보,공영민,김대일,Lee, H.M.,Heo, S.B.,Kong, Y.M.,Kim, Dae-Il The Korean Vacuum Society 2011 Applied Science and Convergence Technology Vol.20 No.3
RF 마그네트론 스퍼터와 DC 마그네트론 스퍼터를 병행하여 ITO/Au/ITO, ITO/Cu/ITO, 그리고 ITO/Ni/ITO 박막을 유리기판 위에 증착하였다. 증착 후 진공열처리를 통하여 층간 금속 층이 ITO박막의 메탄올 검출 민감도에 미치는 영향을 분석하였다. 모든 박막센서의 두께는 100 nm로 동일하게 ITO 50 nm/metal 10 nm/ITO 40 nm로 제작되었고 메탄올 농도는 100에서 1,000 ppm까지 달리하였다. ITO/Au/ITO 박막센서가 가장 높은 민감도를 보임으로써 ITO/Au/ITO 다층박막이 기존의 ITO메탄올 센서를 대체할 수 있는 센서임을 확인하였다. ITO thin films and gold (Au), copper (Cu) and nickel (Ni) intermediate ITO multilayer (ITO/Au/ITO, ITO/Cu/ITO, ITO/Ni/ITO) films were deposited on glass substrates with a reactive radio frequency and direct current magnetron sputtering system and then the effect of intermediate metal layer and annealing temperature on the methanol gas sensitivity of ITO films were investigated. Although both ITO and ITO/metal/ITO (IMI) film sensors have the same total thickness of 100 nm, IMI sensors have a sandwich structure of ITO 50 nm/metal 10 nm/ITO 40 nm. The change in the gas sensitivity of the film sensors caused by methanol gas ranging from 100 to 1000 ppm was measured at room temperature. The IAI film sensors showed the higher sensitivity than the other sensors. Finally, it is concluded that the ITO 50/Au 10/ITO 40 nm film sensors hasthe potential to be used as improved methanol gas sensor.
PFO : MEH-PPV 발광층과 정공 차단층을 이용한 고분자 발광다이오드의 특성
이학민,공수철,신상배,박형호,전형탁,장호정,Lee, Hak-Min,Gong, Su-Cheol,Shin, Sang-Bae,Park, Hyung-Ho,Jeon, Hyeong-Tag,Chang, Ho-Jung 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.2
The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.
PC3DR2 전립선암세포주의 Doxetaxel 내성 발현에서 세포고사관련 유전자의 이질적 발현
이학민(Hakmin Lee),호진녕(Jin-Nyoung Ho),이상철(Sang Chul Lee),오종진(Jong Jin Oh),홍성규(Sung Kyu Hong),이상은(Sang Eun Lee),변석수(Seok-Soo Byun) 대한비뇨기종양학회 2014 대한비뇨기종양학회지 Vol.12 No.2
Purpose: To understand the role of the apoptotic pathway of docetaxel- resistant human prostate cancer cell line (PC3DR2). Materials and Methods: PC3DR2 was established from the PC3 prostate cancer cell line by continuous exposure of escalating concentrations of docetaxel. Total RNA of PC3 and PC3DR2 were collected and cDNA microarray test was performed using GeneChip<SUP>ⓡ</SUP> Human Genome U133 Plus 2.0 Array. GenePlex<SUP>ⓡ</SUP> software was used for data analysis. Significantly different genes were identified with the cutoff 2.0 of fold change and p-value under 0.05 of Welch’s T-test. The apoptotic pathway heatmap was acquired to identify roles of apoptosis-related genes in development of docetaxel-resistance of PC3DR2. Results: There were 833 up-regulated and 908 down-regulated genes in the PC3DR2 compared to the control PC3. There were 72 significantly changed KEGG pathways in the PC3DR2 (cutoff: p<0.05). There were 3 up-regulated (TRADD and 2 FLIPs) and 6 down-regulated (IAP, IKK, Bax, Akt/PKB, PKA and calcineurin) genes in the apoptotic pathway. These 9 changes led to 4 pro-apoptotic and 5 anti-apoptotic processes, indicating contradictory changes in the pathway. Conclusions: Heterogeneous expressions of apoptosis-related genes were identified in the development of docetaxel resistance of the PC3DR2.
PVK:Ir(ppy)₃ 발광층을 가지는 고분자 발광다이오드의 제작
이학민(Lee, Hak-Min),공수철(Gong Su-cheol),최진은(Choi, Jin-Eun),장호정(Chang Ho Jung) 한국산학기술학회 2008 한국산학기술학회 학술대회 Vol.- No.-
ITO 투명전극을 양극으로 사용하고 PEDOT:PSS 고분자 물질위에 PVK와 Ir(ppy)3를 각각 host와 dopant로 사용하여 고분자 발광다이오드를 제작하였다. 전자 수송층의 역할로 TPBI, 음극으로 Al을 증착하여 최종적으로 ITO/PEDOT:PSS/PVK:Ir(ppy)3/TPBI/LiF/Al 구조를 갖는 녹색 인광 고분자 유기발광 소자(PhPLED)를 제작하였다. 제작 된 소자의 발광부 dopant인 Ir(ppy)3도핑 농도에 따른 전기적 광학적 특성을 평가하였다. PVK:Ir(ppy)3를 host와 dopant system으로 dopant Ir(ppy)3의 도핑 양을 0.5 wt%에서 2.5 wt%까지 씩 변화시키면서 최적의 농도를 찾고자 하였다. TPBI를 전자 수송층으로 사용 하였을 경우 최대 휘도는 약 8600 cd/m2 (at 8V)이고, 전류밀도는 337mA/cm2 를 나타내었다.