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허성보 ( S B Heo ),이영진 ( Y J Lee ),김선광 ( S K Kim ),유용주 ( Y Z You ),최대한 ( D H Choi ),이병훈 ( B H Lee ),김민규 ( M G Kim ),김대일 ( Daeil Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.6
SnO₂ thin films were prepared on the Si substrate by radio frequency magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation it is sup-posed that intense Ar bombardments promote rough surface and increase gas sensitivity of SnO₂ films for hydro-gen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9keV. These results suggest that the SnO₂ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.
전자빔 조사 에너지에 따른 In2O3 박막의 특성 변화
허성보 ( Sung Bo Heo ),천주용 ( Joo Yong Chun ),이영진 ( Young Jin Lee ),이학민 ( Hak Min Lee ),김대일 ( Dae Il Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.3
We have considered the effect of electron irradiation energy of 300, 600 and 900 eV on structural, electrical and optical properties of In2O3 films prepared with RF magnetron sputtering. In this study, the thin film crystallization, optical transmittance and sheet resistance are dependent on the electron`s irradiation energy. The electron irradiated In2O3 films at 900 eV are grown as a hexagonal wurtzite phase. The sheet resistance decreases with a increase in electron irradiation energy and In2O3 film irradiated at 900 eV shows the lowest sheet resistance of 110Ω/□. The optical transmittance of In2O3 films in a visible wave length region also depends on the electron irradiation energy. The film that at 900 eV shows the higher figure of merit than another films prepared in this study.
PC 기판위에 증착된 SiO₂/GZO박막의 전자빔 조사에너지에 따른 특성 변화
허성보(Sung-bo Heo),박민재(Min-jae Park),정우창(Uoo-chang Jung),김대일(Dae-il Kim),차병철(Byung-chul Cha) 한국표면공학회 2014 한국표면공학회지 Vol.47 No.6
Ga-doped ZnO (GZO) single layer and SiO₂/GZO bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of SiO₂/GZO thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron’s irradiation energy. The SiO₂/GZO films irradiated at 900 eV were showen the lowest resistivity of 7.8 × 10?3 Ωcm. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of 58o in this study.