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김연장,김진원,김해진,김상수 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.7
We prepared pure BiFeO<sub>3</sub> (BFO) and (Bi<sub>0.9</sub>Eu<sub>0.1</sub>)(Fe<sub>0.975</sub>Zn<sub>0.025</sub>)O<sub>3−δ</sub> (BEFZO) thin films on Pt(111)/Ti/SiO<sub>2</sub>/Si(100) substrates by using a chemical solution deposition method. Improved electrical properties were observed in the co-doped BEFZO thin film. The leakage current density of the BEFZO thin film was three orders of magnitude lower than that of the pure BFO, 3.93 × 10<sup>−6</sup> A/cm<sup>2</sup> at 100 kV/cm. The remnant polarization (2<i>P<sub>r</sub></i>) and the coercive electric field (2<i>E<sub>c</sub></i>) of the BEFZO thin film were 42 μC/cm<sup>2</sup> and 898 kV/cm at an applied electric field of 1000 kV/cm and at a frequency of 1 kHz and the values decreased with increasing measurement frequency to 18 μC/cm<sup>2</sup> and 866 kV/cm at 10 kHz, respectively. Also, the fatigue endurances were evaluated at peak voltages of 8 - 10 V after 1.44 × 10<sup>10</sup> cycles in the BEFZO thin films and were 70 ∼ 90% of the initial values. We also confirmed that the 2<i>P<sub>r</sub></i> was fairly saturated at measurement frequency about 30 kHz for the BEFZO thin film.