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신훈범,안형근,한득영,Shin, Hoon-Beom,Ahn, Hyung-Keun,Han, Deuk-Young 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
This paper explains the design and fabrication of an inverter for LCD backlight using a multilayer piezoelectric transformer. That inverter is operated by the burst dimming method whose dimming signal is controlled by the duty ratio of rectangular switching signal to a PWM controller. The brightness of CCFL's are investigated according to the various dimming signals, and when those CCFL's are turned on, the temperature distributions on the piezoelectric transformer and circuit components of the inverter are also investigated by a thermo-camera.
류세환,이호길,안형근,한득영,Ryu, Se-Hwan,Lee, Ho-Kil,Ahn, Hyung-Keun,Han, Deuk-Young 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.1
In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.
박익근 ( Ik Keun Park ),박은수 ( Un Soo Park ),김현묵 ( Hyun Mook Kim ),안형근 ( Hyung Keun Ahn ),김정석 ( Chung Soek Kim ),권숙인 ( Sook In Kwun ),변재원 ( Jai Won Byeon ) 한국구조물진단유지관리공학회 2000 한국구조물진단유지관리공학회 학술발표대회 논문집 Vol.4 No.1
It is very important to evaluate the surface or subsurface microstructure because of th on mechanical properties of materials. Surface SH-wave which is horizontally polarized traveling along near surface and subsurface layer is an attractive technique for material difficulty in preparing specimens form in-service industrial facilities. In this stud evaluation for degraded structural materials used at high temperature by Surface SH-wave discussed. 2.25Cr-lMo steel specimens which were prepared by the isothermal aging heat tr 650° were evaluated by ultrasonic nondestructive evaluation techniques investigating th velocities, attenuation coefficient and amplitude spectra etc. In addition, it has verif the frequency-dependence of ultrasonic group velocity and attenuation coefficient using wav
PbTe 열전재료에 형성된 HgTe 나노개제물의 석출거동: 초기 격자 불일치의 형성, 이론적 계산 및 실험적 증명
김경호,권태형,박수한,안형근,이만종,Kim, Kyung-Ho,Kwon, Tae-Hyung,Park, Su-Han,Ahn, Hyung-Keun,Lee, Man-Jong 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.7
A highly strained nanostructure comprising crystallographically aligned HgTe nanoinclusions and a surrounding PbTe matrix has been synthesized using a precipitation process of supersaturated HgTe-PbTe alloys. From the early precipitation stage, HgTe nanoinclusions take disk shape, which is transformed from initial HgTe nuclei, although there is no lattice constant difference of the two end components at standard state. As a primary reason for the morphological transformation of the initial spherical HgTe nuclei to HgTe nanodisks, the induced lattice mismatch is suggested. On the condition that the HgTe nanodisks maintain perfect coherent nature with PbTe matrix, the stress-free lattice constant of constrained HgTe nanodisks has been calculated based on the defined concept of the strain-induced tetragonality, the linear elasticity and the actual measurement in HRTEM images.
신훈범,이용국,유영한,안형근,한득영,Shin, Hoon-Beom,Lee, Yong-Kuk,Yu, Young-Han,Ahn, Hyung-Keun,Han, Deuk-Young 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.12
In this paper, the equivalent circuit model of a Rosen-type multilayer piezoelectric transformer(MPT) has been proposed based on the Mason's equivalent circuit model and the principle of single layer piezoelectric plate. From the piezoelectric direct and converse effects, the symbolic expressions between the electric inputs and outputs of the MPT have been derived from the equivalent circuit model. A simplified equivalent circuit model of the MPT whose driving part has a single input form has been proposed. The symbolic expressions of the driving part have been derived from the simplified equivalent circuit model and the model was compared with the multi-input equivalent circuit model through the simulation. In the comparisons between the simulation results and the experimental data, output voltage is 630 Vp-p in case of 11-layered MPT and 670 Vp-p for 13-layered MPT over the experiment range. As the load resistance increases, output voltage increases and saturates over $300k{\Omega}$ and the resonant frequency changes from 102 kHz to 103 kHz. The simulation and the experimental results agree well over different load resistances and frequencies.
PV모듈의 발전성능시험을 위한 Solar Simulator의 측정불확도 요인 분석
강기환,김경수,박지홍,유권종,안형근,한득영,Kang, Gi-Hwan,Kim, Kyung-Soo,Park, Chi-Hong,Yu, Gwon-Jong,Ahn, Hyung-Keun,Han, Deuk-Young 한국태양에너지학회 2007 한국태양에너지학회 논문집 Vol.27 No.1
In this paper, we analyzed the elements of measurement uncertainty on electrical performance test which are the most important things in photovoltaic module performance test. Repeating the performance test by 6 men, the measurement uncertainty could be calculated. In this experiment, Solar Simulator (A-Class pulse type) used for domestic certificate test of PV module is Pasan IIIb (Balval, Switzerland). The possible elements of the measurement uncertain that could effect electrical performance test of PV module are reference cell, spectrum correction, error from measurement repetition, test condition, stability and uniformity of artificial solar simulator. To find the measurement uncertainty, 6 men repeated the test by 10 times. And the results were that numerical average value was 124.44W and measurement uncertainty was $124.44W{\pm}0.36W$ with 95% confidence level for 125W PV module(KD-5125).
Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화
원창섭,이명수,류세환,한득영,안형근,Sub, Won-Chang,Lee, Myung-Soo,Ryu, Se-Hwan,Han, Deuk-Young,Ahn, Hyung-Keun 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.
유효면적과 평균속도를 고려한 TFT의 해석적 Drain 전류 모델
정태희,원창섭,류세환,한득영,안형근,Jung, Tae-Hee,Won, Chang-Sub,Ryu, Se-Hwan,Han, Deuk-Young,Ahn, Hyung-Keun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.3
In this paper, we proposed an analytical model for TFT which has series of the polycrystalline structures. An average speed is defined as carrier speed by the electric field. The effective square is suggested as the area of grain without depletion for the changed grain size. First, physical parameters such as grain size, channel lenght and trap density, have been changed to prove the validity of the average speed model and the value of the effective square has been estimated through drain-source current.