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Sol - Gel 법으로 형성한 Ta2O5 게이트 ISFET 의 pH 드리프트 특성
권대혁,조병욱,김창수,손병기 ( Dae Hyuk Kwon,Byung Woog Cho,Chang Soo Kim,Byung Ki Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.2
The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFEI to van- with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing the drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about 70Å thick by sol-gel method on Si₂N₄/SiO₂-gate of pH-ISFET. The fabricated Ta₂O_5-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH 3-11, and had relatively small average pH drift of about 0.06 pH/day.
ISFET 이온감지기구의 Site Binding 모형 확장과 그 $Si_3N_4$ 수소이온 감지막에의 적용
서화일,권대혁,이종현,손병기,Seo, Hwa-Il,Kwon, Dae-Hyuk,Lee, Jong-Hyun,Sohn, Byung-Ki 대한전자공학회 1988 전자공학회논문지 Vol. No.
The dual dielectric films have been grown on single-crystalline silicon substrates with the thickness ranging from 125A to 180A at various gas and temperature conditions by using rapid thermal process that included independent nitridation step. The film characteristics and their dependence on the contents of the hydrochloric gas and the processing time have been studied. By the addition of the hydrochloric gas, the initial oxide thickness was significantly changed, but after sequential nitridation processes the thickness of the films was nevertheless a little bit varied within 10A. All the samples of the dual dielectric films show the increased breakdown voltages in proportion to the additive contents of the hydrochloric gas and also show the higher breakdown strengths than the thermal oxide and nitrided oxide films grown by the conventional furnance process or the rapid thermal nitridation process that was composed of the dependent nitridation cycles. 독립적인 nitridation step이 포함된 급속 열처리 공정을 이용하여 125-180A 두께의 이중 절연박막을 단결정 실리콘 상에 형성하였다. HCl 가스의 첨가량과 공정시간의 변화에 따른 박막 특성의 변화를 고찰하였고, 이에 따른 박막의 전기적 특성을 관찰하였다. HCl 가스의 첨가에 의해 초기의 산화막 두께의 성장은 현저하게 나타났으나, nitridation 후의 박막두께의 변화는 10A 이하로 매우 저조하였다. 이중 절연박막의 항복전압은 HCl 가스의 첨가량에 비례하여 점차 증가하였고, 절연강도는 furnace나 독립적인 nitridation step이 포함되지 않은 급속 열처리 공정으로 형성한 같은 두께의 박막에 비해 높은 것으로 분석되었다.
화학보호복의 생화학 유사작용제 투과저항성 평가 방법 개발
윤혜신,권대혁,강재성,서현관,이해완,박현배,Yoon, Hye Shin,Kwon, Dae Hyuk,Kang, Jae Sung,Seo, Hyeon Kwan,Lee, Hae Wan,Park, Hyen Bae 한국섬유공학회 2014 한국섬유공학회지 Vol.51 No.6
Non-military researchers and civil manufacturers face several difficulties in the study of protective materials for chemical-biological defense. The performance of these materials cannot be estimated in non-governmental circles as the private use of chemical warfare agents (CWAs), such as GD (soman) and HD (mustard), by civilians is not permitted. The barrier properties of protective materials can be evaluated only in military laboratories, by the TOP 8-2-501 test method, using real CWAs. In this study, the permeation of CWA simulants such as dimethyl methyl phosphonate (DMMP), triethyl phosphate (TEP), and chloroethyl phenyl sulfide (CEPS) was investigated by the chemical permeation test method. Moreover, permeation of the CWA simulants through different samples of protective materials could be estimated by the proposed cumulative permeation measurements, using an absorbent tube.
백금전극을 이용한 ISFET 포도당센서의 성능개선 연구
김창수,이수근,권대혁,손병기 ( Chang Soo Kim,Soo Keun Lee,Dae Hyuk Kwon,Byung Ki Sohn ) 한국센서학회 1993 센서학회지 Vol.2 No.2
An ISFET glucose sensor containing a platinum working electrode have been prepared and characterized. The conventional ISFET glucose sensor determines the glucose by measuring the pH variation due to the dissociation of gluconic acid generated by the enzyme(GOD) reaction. Because of the low dissociation constant, however, it has some problems such as low sensitivity and long response time. In this paper, the platinum working electrode was introduced to the ISFET glucose sensor to solve these problems. H₂O₂, which is the other product of the enzyme reaction, is then electrolyzed on the platinum electrode, so that the concentration of hydrogen ion is increased. Fabricated glucose sensor containing a platinum electrode had a higher sensitivity(56mV/decade) and wider linear response range(10∼1,000 mg/dl) than those of the conventional sensor.
유권규(Gyeon Gue You),권대혁(Dae Hyuk Kwon),전춘배(Choon Bae Jun),김정규(Jeong Gyoo Kim),박기철(Ki Cheol Park) 한국센서학회 2000 센서학회지 Vol.9 No.2
Lithium doped zinc oxide(ZnO:Li) films are prepared by rf magnetron sputtering on Corning 7059 glass substrate using specifically designed ZnO targets containing different amount of Li₂CO₃ powder as the Li doping source. The structural properties of the Li doped ZnO films are investigated by XRD, SEM and AFM. The electrical properties of the ZnO:Li films are measured for various deposition conditions, such as the substrate temperature, O₂/Ar gas ratio and rf power. The effects of the Li₂CO₃ content in target and the deposition conditions on the structural and electrical properties were studied. When ZnO:Li films were sputtered at the substrate temperature of 200℃, O₂/Ar gas ratio of 100% and rf power of 100W with a target containing less than lwt~ content of Li₂CO₃, showed good surface morphology, strong c-axis orientation and high resistivity of more than 10^8Ωcm.
김명규(Myung-Gyoo Kim),권대혁(Dae-Hyuk Kwon),김진변(Jin-Sup Kim),박재희(Jae-Hee Park),이정희(Jung-Hee Lee),손병기(Byung-Ki Sohn) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.3
실시콘 미세가공기술로 형성된 프레임 모양의 실리콘 기판에 의해 지지되는 100 ㎚-Au/30 ㎚-NiCr/150 ㎚-Si₃N₄/300㎚-SiO₂/150㎚-Si₃N₄ 광반사막을 제조하였으며, 이것을 광섬유와 결합하여 강도형 다모드 광섬유 압력센서를 제작하고 그 특성을 조사하였다. Si₃N₄/SiO₂/Si₃N₄ 다이아프램을 광반사막으로 사용하기 위하여 이 다이아프램의 뒷면에 NiCr 및 Au 박막을 각각 진공증착하여 광반사막에서의 광투과에 의한 광손실을 수 %로 감소시킬 수 있었다. 유전체 다이아프램의 상하에 각각 있는 Si₃N₄막은 KOH 수용액에 의한 실리콘 이방성 식각시 자동시각 정지층 역할을 하여 다이아프램 두께의 재현성이 우수하였다. 다이아프램의 크기가 3×3 ㎟, 4×4 ㎟ 및 5×5 ㎟인 센서는 각각 0~126.64 kPa, 0~79.98 kPa 및 0~46.66 kPa의 압력범위에서 선형적인 광출력-압력 특성을 나타내었으며, 이들 센서의 압력감도는 각각 약 20.69 nW/kPa, 26,70 nW/kPa 및 39.33 nW/kPa로서, 다이아프램의 크기가 증가할수록 압력감도도 증가하였다. An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 ㎚-Au/30 ㎚-NiCr/150 ㎚-Si₃N₄/300 ㎚-SiO₂/150 ㎚-Si₃N₄ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of Si₃N₄/SiO₂/Si₃N₄ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation, respectively, and thus optical loss caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-Si₃N₄ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79.98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3×3 ㎟, 4×4 ㎟, and 5×5 ㎟, indicating that the sensitivity increases as diaphragm size increases.
고분자 이중층의 이온 방해막을 이용한 FET 형 기준전극 제작
이영철(Young Chul Lee),김영진(Young Jin Kim),정훈(Hun Jeong),권대혁(Dae Hyuk Kwon),손병기(Byung Ki Sohn) 한국센서학회 2000 센서학회지 Vol.9 No.2
A FET-type reference electrode(REFET) is an effective method to eliminate typical problems with ISFET(ion sensitive field-effect transistor) such as drift, temperature, light-dependence and miniaturization of reference electrode. However, it is difficult to make the highly reliable REFET with excellent long-term stability and reproducibility. In this paper, an ion-blocking membrane was applied to the REFET for the FET-type electrolyte sensors(pH, pNa-ISFET). The fabricated REFET indicated the stable sensitivity (55.4 mV/pH, 53.5 mV/decade) and good linearity in the pH and pNa measurement. In the measurement, ISFET/Pt/REFET configuration showed excellent stability and reproducibility.