http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
고주파 마그네트론 스퍼터링법에 의해 제조된 TO:F 투명도전막의 제조 및 특성 ( 1 )
박기철,김정규 ( Ki Cheol Park,Jeong Gyoo Kim ) 한국센서학회 1994 센서학회지 Vol.3 No.2
TO:F(SnO₂:F) thin films were prepared by RF magnetron sputtering system. The dependence of their structural, electrical, and optical properties on deposition conditions such as substrate temperature, working pressure and power was studied. The optimum conditions of TO:F thin film are SnF₂ content of 15wt.% in target, RF power of 150W, substrate temperature of 150℃ and working pressure of 2mmTr. The resistivity and transmittance at 550nm in visible spectrum of the TO:F film deposlt . d at optimum condition are 9 X 10^(-4)Ω·cm and above 85%, respectively. For the films deposited from the target without SnF₂ and with 15wt.% SnF₂, the optical bandgaps calculated from the transmittance curves are 3.f34 and 3.9eV, respectively. X-ray diffraction patterns showed that TO and TO:F films had tetragonal ruble structure with (101), (200) direction.
기판온도 및 열처리온도에 대한 CdS 박막의 전기적 및 광학적 특성
박기철,심호섭,김정규 ( Ki Cheol Park,Ho Seob Shim,Jeong Gyoo Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.2
CdS thin films for window material of solar cell were prepared by close spaced vapor transport deposition system and annealed at different temperatures. The structural, electrical, and optical properties of as-deposited and annealed CdS films were investigated as functions of substrate and annealing temperatures. The CdS thin films were grown perpendicularly to the substrate along the (002)plane with hexagonal structure regardless of the preparation conditions The resistivity of the CdS film deposited was increased gradually from 60Ω·cm for 25℃ to 2X10⁴Ωcm for 300℃. The optical transmittance at the substrate temperature of 25℃ was about 80% in the visible spectrum. The resistivity increased monotonically, and the optical transmittance was decreased substantially with annealing temperature due to the increased defect density in the CdS film.
Al<sub>2</sub>O<sub>3</sub>를 첨가한 LaFeO<sub>3</sub> 후막의 암모니아 가스 감지특성
김준곤,안병렬,마대영,박기철,김정규,Kim, Jun-Gon,Ahn, Byeong-Yeol,Ma, Tae-Young,Park, Ki-Cheol,Kim, Jeong-Gyoo 한국센서학회 2002 센서학회지 Vol.11 No.1
스크린 프린팅법으로 $Al_2O_3$ 기판 위에 $LaFeO_3$를 기본물질로 하여 $Al_2O_3$를 각각 2Wt.%, 5wt.%, 10wt.%를 첨가한 후막을 제조하였다. 열처리 온도에 따른 후막의 구조적, 전기적 특성과 암모니아 가스에 대한 감지특성을 조사하였다. X선 회절에서, 첨가한 $Al_2O_3$는 $1200^{\circ}C$까지의 열처리에도 $LaFeO_3$와 반응하여 화합물을 형성하지 않음을 확인하였다. 전자현미경 사진에서 $Al_2O_3$의 첨가량에 따른 열처리에 대한 입자의 변화는 차이를 보이지 않았다. 후만의 전기적 특성에서 활성화 에너지가 높고 전기저항이 작은 시료에서 가스감도가 좋았다. $Al_2O_3$를 2wt.% 첨가하여 $1200^{\circ}C$에서 열처리한 후막은 100ppm $NH_3$ 가스에 대해 동작온도 $350^{\circ}C$에서 210%의 감도를 보였다. 이 후막은 $NH_3$ 가스에 대해 우수한 선택성을 보였다. $LaFeO_3$-based thick films with 2wt.%, 5wt.% and 10wt.% $Al_2O_3$ additives were fabricated by screen printing method on $Al_2O_3$ substrates. Structural, electrical and ammonia gas sensing characteristics of the thick films with different heat treatment temperatures were examined. From XRD results, the compound of $LaFeO_3$ and $Al_2O_3$ was not found until the heat treatment at $1200^{\circ}C$. SEM microphotograph showed similar grain growth despite the amount of $Al_2O_3$ additives with the heat treatment. Thick films with high activation energy and low resistance in the electrical properties showed high sensitivity for gases. Thick films with 2wt % $Al_2O_3$ additives heat-treated at $1200^{\circ}C$ showed the sensitivities of 210% for 100 ppm $NH_3$ gas at the working temperature of $350^{\circ}C$. The thick films showed food selectivity to $NH_3$ gas.
열처리된 ZnO : Al 투명도전막의 전기적 및 광학적 특성
유권규(Gyeon Gue You),김정규(Jeong Gyoo Kim),박기철(Ki Cheol Park) 한국센서학회 1999 센서학회지 Vol.8 No.2
The heat treatment effects of the undoped ZnO and Al doped ZnO(AZO) transparent conductive films prepared by rf magnetron sputtering were investigated. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied. The resistivity of the undoped ZnO films heat treated in air and Hz plasma for 1 hour increased rapidly above 200 ℃ and 300 ℃, respectively. And that of the ZnO:Al films heat treated in air also increased rapidly above 300 ℃. On the other hand that of the ZnO:Al films heat treated in Hz plasma was constant regardless of heat treatment temperature. The optical transmittance above 550 nm is about 90 % for all thin films regardless of impurity doping, the heat treatment temperature and ambient.