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Depth-Dependent Detrapping Dynamics of Electrons in SiO2
강치중,S.Lee,Y.Kuk 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.3
The trapping and detrapping dynamics of electrons in a silicon-dioxide (SiO$_2$) layer with electrical stress are observed by scanning capacitance microscopy. The derivative capacitance (dC/dV) images and the local capacitance-voltage (C-V) curves are used to estimate the number of traps and the depth of the traps away from the SiO$_2$/Si interface.