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서영석 嶺南大學校 工業技術硏究所 2004 工業技術硏究所論文集 Vol.32 No.2
A new mobile camcorder type telephone has been designed. The telephone can record continuously the moving picture with the finite volume of memory. The phone has the circular type memory for the continuous video recording. The generated current video data stream is overwritten on the oldest region of the recorded video data. The telephone has an external interface port for the small remote camera module to catch the scene around the user, and has the acceleration sensor to detect the impact on the device. In an emergency, the camcorder phone can record the surroundings of an user and send the video data to the other remote user.
徐英錫 서울산업대학교 1977 논문집 Vol.10 No.1
The objective of this study is to control voltage regulation. It is very difficult that a customer is supplied with superior energy because of voltage change. The control method of voltage regulation are as follows; ⅰ) reduction of a power source impedance. ⅱ) reduction of a load current. ⅲ) reduction of a line impedance. ⅳ) reduction of a line reactive power. ⅴ) reduction of a direct control of voltage ⅵ) Separation of a load, occuring a voltage change.
n型 InP基板에 形成시킨 턴넬金屬 酸化物 半導體의 電氣的·光電池的 特性
徐英錫 서울産業大學校 1986 논문집 Vol.24 No.1
Pd (n-type) InP Schottky barries devices have been fabricated on unoxidized and oxidized surfaces and their electrical as well as photovoltaic characteristics have been evaluated. Devices built on the oxidized surfaces show considerably improved characteristics compared with those built on unoxidized surfaces. A saturation current density of ?? and barrier height of 0.58eV have been observed for tunnel metal-oxide-semiconductor (MOS) devices compared with ?? and 0.62eV for metal-semiconducted (MS) devices. Effective Richardson constants, obtained from activation energy plot of saturation current density, have been found to be 0.66 and ?? for MOS and MS devices, respectivety. Such low values of the Richardson constant when compared with the theoretical value, provide clear evidence of the modification of current transport mechanism in the presence of an interfacial layer. Photovoltaic cells with an efficiency of 7% have been built on oxidized surfaces without the use of a grid structure or antireflection coatings, under AM1 illumination, the oxidized devices show the following parameters; open circuit voltage = 575 mV. short circuit current=16.8 mA/㎠, and fill factor=0.73, using photoresponse techniques, the diffusion length has been calculated to be 1.78㎛ for MOS devices, a value similar to that obtained for MS devices.