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이우선,최창주,고필주,최권우 조선대학교 에너지.자원신기술연구소 2004 에너지·자원신기술연구소 논문지 Vol.26 No.1
Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of WO_(3) CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the WO_(3) CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.
김창석,최창주,이우선,오무송,김태성,김병인 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2
In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO₂onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-αx) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO₂thin film evaporated onto ZnO is high and ε₂ is smaller than ε₁. The specimen TiO₂thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.
이우선,최창주 조선대학교 에너지.자원신기술연구소 2000 에너지·자원신기술연구소 논문지 Vol.22 No.2
InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200℃, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.
Oxide-CMP 연마 특성 개선을 위한 실리카 슬러리 온도 영향 분석
이우선,고필주,최창주 조선대학교 에너지.자원신기술연구소 2004 에너지·자원신기술연구소 논문지 Vol.26 No.2
Chemical mechanical polishing (CMP) Process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP perfbrmance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP process for ULSI multi-level interconnection technology.
이우선,고필주,최권우,정수복,최창주 조선대학교 에너지.자원신기술연구소 2003 에너지·자원신기술연구소 논문지 Vol.25 No.2
Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). We investigated the performance of WO₃ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the WO₃ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.