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김희진,위유민,박성규,홍성수,조태식,이상호 조선대학교 구강생물학연구소 2002 口腔生物學硏究 Vol.26 No.2
Dentinogenesis imperfecta is an inherited disorder of dentin formation, usually exhibiting an autosomal dominant mode of transmission. Type Ⅰdentinogenesis imperfects occurs in Patients afflicted with osteogenesis imperfecta. Type Ⅱdentinogenesis imperfecta is not associated with osteogenesis imperfects. Type Ⅲ dentinogenesis imperfecta (Brandywine type) occurs in a racial isolate area in the state of Maryland. Clinically, the color of teeth may range from a gray to brownish violet or yellowish brown with translucent or opalescent hue. The enamel often chips and fractures away, allowing speedy attrition of the remaining, poorly calcified. softer dentin. Roentgenographic features include pulpal obliteration, bulbous crowns and short and blunted roots. The cementum, periodontal membrane and the supporting bone appear normal
오재근,최기영,송재흥,김영국,채건식,주유환,설정식,손인호,차성극,이상찬 慶南大學校 附設 基礎科學硏究所 1996 硏究論文集 Vol.8 No.-
HClO₄(pH:2) 수용액에서 양극산화 방법으로 HgMnTe(HMT)의 표면에 산화막을 형성 시켰다. 산화막의 두께는 SEM으로 측정하였으며 10㎛였다. 전류-전압 특성곡선을 얻어 산화 피크 전압으로부터 HTeO₂?, TeO?, HHgO₂? 막이 형성되었음을 알 수 있었다. 산화시키지 않은 HMT와 HClO₄수용액에서 산화시킨 HMT에 대해 Hall전압 및 자기저항을 각각 측정하였다. 홀전압과 자기저항은 HMT보다 HMT산화막에서 더 컸으며 이것은 HHgO₂? 공격자가 홀의 역할을 하고, TeO₄? 산화막은 전하의 포획도를 낮게하기 때문으로 생각할 수 있다. Anodic oxidation processes on HgMnTe surface has been studied in standard aqueous HClO₄(pH:2) solution. The 10㎛ thickness of the anodic oxide layers was measured by SEM. The Composition of the anodic oxide layers are evaluated from current-voltage(I-V) characteristic of HgMnTe Oxidation. The layers are composed of mixed oxide. ??, TeO₄, and?? in HClO₄solution. Transport properties have been investigated in HMT oxide layer made in HClO₄solution and virgin HMT samples at 300K. Hall voltage and magnetoresistance are greater in oxide layer HMT than virgin HMT. As a result, we know that the vacancy of ??in an anodic oxide layer acts as hole and the resulting oxide ?? layer exhibit a reduced degree of charge trapping and increase magnetoresistance.
You, Seong-sik The Korean Society Of SemiconductorDisplay Technol 2017 반도체디스플레이기술학회지 Vol.16 No.2
The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.
You, Seong-sik The Korean Society Of SemiconductorDisplay Technol 2017 반도체디스플레이기술학회지 Vol.16 No.1
The result of stripping process for the removal of the post etch/ash Photoresist (PR) residue on an aluminum patterned wafer by using supercritical $CO_2$ ($sc-CO_2$) mixture, was investigated by scanning of electron microscope (SEM) inspection of wafer, measuring the cloud points and visual observation of the state of $sc-CO_2$ mixtures. It was found that $sc-CO_2$ mixtures were made by mixing additives and $sc-CO_2$ should form homogeneous and transparent phase (HTP) in order to effectively and uniformly remove the post etch/ash PR residue on the aluminum patterned wafer using them. The additives were formulated by mixing and co-solvents like an amine compound and fluorosurfactants used as HTP agents, and the PR residue on the wafer were able to be rapidly and effectively removed using the $sc-CO_2$ mixture of HTP. The five kinds of additives were formulated by the recipe of mixing co-solvents and surfactants, which were able to remove PR residue on the wafer by mixing with $sc-CO_2$ at the stripping temperature range from 40 to $80^{\circ}C$. The five kinds of $sc-CO_2$ mixtures which were named as PR removers were made, which were able to form HTP within the above described stripping temperature. The cloud points of $sc-CO_2$ mixtures were measured to find correlation between them and HTP.
도금 폐수 중 유가 금속 회수를 위한 이온교환섬유의 상용화기술
유성식 ( Seong-sik You ) 한국화학공학회 2017 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.55 No.4
On the basis of 200 ppm of Ag and 120 l/h of feed flow rate, we built a pilot plant of an ion exchange fiber system having an double tube type ion exchange chamber with strong base ion exchange fiber (FIVAN A-6) which was designed to replace fibers easily and to eliminate the need for a fixture. The following results were obtained for the double tube type of ion exchange fiber system with an ion exchange capacity of 4.6 meq/g for Ag. The adsorption process was operated in the range of 40~90 l/h after confirming the effect of the flow rate and, pH did not affect formation of complex ion of Ag in the range of pH 7~12. In the case of backwash process, the recovery rate of Ag was tested in the range of 60~120 l/h and comparative experiments were carried out using NaOH, NH<sub>4</sub>Cl, and NaCl as the chemicals for backwash. Although the desorption time was shortened at higher concentration, the desorption efficiency per mol was lowered. Therefore, it was confirmed that the desorption time and the concentration should be well balanced to operate economically. The desorption pattern of the backwash process is slower than the adsorption process and takes a lot of time. The results showed that the Ag adsorption ratio was 99.5% or more and the Ag recovery ratio was 96% or more, and commercialization was possible.
CASE REPORT : Refractory Duodenal Crohn`s Disease Successfully Treated with Infliximab
( You Lim Kim ),( Young Sook Park ),( Eun Kyoung Park ),( Dae Rim Park ),( Gyu Sik Choi ),( Sang Bong Ahn ),( Seong Hwan Kim ),( Yun Ju Jo ) 대한장연구학회 2014 Intestinal Research Vol.12 No.1
Crohn`s disease (CD) may involve any part of the gastrointestinal tract, from the mouth to the anus. Approximately >90% of cases occur in the small bowel and colon. Upper gastrointestinal involvement, especially duodenal manifestation, is relatively rare. Therefore, adequate medical treatment for duodenal CD has not yet been established. We report a case of CD with duodenal involvement. A 46-year-old man with Crohn`s ileocolitis presented to our hospital with right upper quadrant pain. An endoscopy showed a deep excavated ulcer with deformity at the duodenal bulb, and he was initially treated with azathioprine (1 mg/kg), Pentasa (3.0 g/day), and a proton pump inhibitor for 1 year. However, the deep ulcer did not heal. Therefore, infliximab infusion therapy was initiated, and the duodenal lesion completely resolved on follow-up esophagogastroduodenoscopy. We report a case of duodenal CD that completely resolved following infliximab infusion, with a review of the literature. (Intest Res 2014;12:66-69)