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Ying-Hui Zhong,Jie Yang,Xin-Jian Li,Peng Ding,Zhi Jin 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.6
In this research, the DC and RF characteristics for our own InAlAs/InGaAs InP-based highelectron-mobility transistors (HEMTs) with 0-nm, 50-nm, and 200-nm silicon-nitride (Si3N4) passivationfilms have been investigated comprehensively and systematically. With increasing Si3N4passivation film thickness, the device exhibits an apparent improvement in the output conductanceand a distinct drift of the pinch-off voltage toward a positive value. Especially, the device passivatedby using a 50-nm Si3N4 film demonstrates the highest extrinsic transconductance and channelcurrent. The appeared changes of the DC properties can be interpreted as due to the passivationinducedpositively-charged surface state increasing the sheet carrier density with the carrier mobilityand parasitic resistance of device being deteriorated by long-time high-stress-intensity ion bombardment. Additionally, the degradations of the current-gain cutoff frequency (fT ) and maximumoscillation frequency (fmax) can be attributed to the drastically-increased parasitic capacitance andresistance induced by the passivation process. This work will be of great importance in fabricatingInP HEMTs with high performances.
Ying-Ying Zhang,Jungwoo Oh,In-Shik Han,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Hong-Sik Shin,Won-Ho Choi,Hyuk-Min Kwon,Wei-Yip Loh,Majhi, P.,Jammy, R.,Hi-Deok Lee IEEE 2009 IEEE transactions on electron devices Vol.56 No.2
<P>Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 degrees C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95Pd0.05, alloy could be promising for the high mobility Ge MOSFET applications.</P>
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhong, Zhun,Oh, Soon-Young,Lee, Won-Jae,Zhang, Ying-Ying,Jung, Soon-Yen,Li, Shi-Guang,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Kim, Yeong-Cheol The Korean Institute of Electrical and Electronic 2008 Transactions on Electrical and Electronic Material Vol.9 No.2
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
Zhong-Ying Miao,Qing-Xia Xu 한국지질과학협의회 2017 Geosciences Journal Vol.21 No.3
The Mohe Formation is one of the important source rocks for oil-gas and gas hydrates in the Mohe Basin. In this paper, mudstone from cores of the M-1 and M-3 wells and argillite from cores of the MK-2 well of the Mohe Basin were studied. The depositional environment, organic matter source, thermal maturity, kerogen type, and hydrocarbon generation potential of the core samples were determined using organic and inorganic geochemistry. The dual sources of organic matter were terrestrial plants and aquatic organisms. The organic matter was deposited in a reducing lacustrine environment. The lake water salinity was higher when argillite was deposited. The late stage of the sedimentary filling of the lacustrine basin was characterized by high sulfate contents. The source rocks primarily contained Type II2–III kerogen. The present-day thermal maturity parameters reveal that the organic matter of the Mohe Formation is mature to overmature, indicating that this unit is capable of generating gas condensate and dry gas. In addition, we compared the organic geochemistry characteristics of mudstone and argillite. The results indicate that TOC, S1 + S2, and HI are lower in argillite than in mudstone. Although the biomarker maturity parameters cannot reflect the thermal evolution of the source rocks, they reflect the source of the organic matter and the depositional environment. The results provide important constraints for the evaluation of the hydrocarbon potential of lacustrine source rocks of the Mohe Formation from the Upper Jurassic and for the location of petroleum resources in the Mohe Basin.
Stress Dependence of Thermal Stability of Nickel Silicide forNano MOSFETs
Ying-Ying Zhang,Won-Jae Lee,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,이희덕,Sung-Kyu Lim 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride (Si3N4) layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at 500 oC for 30 sec. 2000 Å thick Si3N4 layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the Si3N4 layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Zhong-Liu Zhou,Wen-Qing Yin,Xiao-Peng Zou,Dan-Ying Huang,Cui-Liu Zhou,Lian-Mei Li,Ke-Cheng Chen,Zi-Ying Guo,San-Qing Lin 한국응용생명화학회 2014 Applied Biological Chemistry (Appl Biol Chem) Vol.57 No.6
The extraction and solvent partition of the leaves ofEucalyptus citriodora, and repeated column chromatography for n-BuOH fraction yielded a new flavonoid glycoside, citrioside C (1),along with three known flavonoid glycosides (2-4). The latter wereidentified with kaempferol-3-O-β-D-glucopyranosyl (12)-α-L-rhamnoside(2), kaempferol-3-O-α-L-rhamnoside (3), and quercetin-3-O-α-Lrhamnoside(4). Their chemical structures were identified on thebasis of spectroscopic data analyses including NMR, MS, UV, andIR. All constitutents were isolated for the first time from the leavesof Eucalyptus citriodora. The potential antivirus activity of all theisolated compounds was evaluated. Compound 4 showed potentantiviral activity against respiratory syncytial virus with 50%inhibition concentration (IC50) value of 1.9 μg/mL and selectiveindex value of 9.8.
Ying Zhong,Weichao Li,Liang Zhou,Chen Deng,Jinyang Han 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.2
The capacity and equivalent switching frequency of parallel interleaved inverters can be increased, but there are problems with neutral point potential balance and parallel bridge circulating current. This paper regards the parallel three-level inverter as a five-level inverter and five-level space vector integrated modulation is applied. On this basis, a neutral-point potential control strategy based on the mid-point charge to calculate the adjustment factor k is proposed. By further meticulously partitioning specific sector regions, the selection method of redundant vectors in the switching sequence is optimized without increasing the switching times, and the midpoint voltage ripple is reduced. Then, the redundant state allocation in the process of splitting the five-level into three-level is used as a new degree of freedom to suppress the circulating current of the parallel bridge, therefore realizing the control of voltage and current sharing. Finally, simulation and experiments verify the correctness and effectiveness of the method.
Zhou, Zhong-Liu,Yin, Wen-Qing,Zou, Xiao-Peng,Huang, Dan-Ying,Zhou, Cui-Liu,Li, Lian-Mei,Chen, Ke-Cheng,Guo, Zi-Ying,Lin, San-Qing 한국응용생명화학회 2014 Applied Biological Chemistry (Appl Biol Chem) Vol.57 No.6
The extraction and solvent partition of the leaves of Eucalyptus citriodora, and repeated column chromatography for n-BuOH fraction yielded a new flavonoid glycoside, citrioside C (1), along with three known flavonoid glycosides (2-4). The latter were identified with kaempferol-3-O-${\beta}$-$\small{D}$-glucopyranosyl (12)-${\alpha}$-$\small{L}$-rhamnoside (2), kaempferol-3-O-${\alpha}$-$\small{L}$-rhamnoside (3), and quercetin-3-O-${\alpha}$-$\small{L}$-rhamnoside (4). Their chemical structures were identified on the basis of spectroscopic data analyses including NMR, MS, UV, and IR. All constitutents were isolated for the first time from the leaves of Eucalyptus citriodora. The potential antivirus activity of all the isolated compounds was evaluated. Compound 4 showed potent antiviral activity against respiratory syncytial virus with 50% inhibition concentration ($IC_{50}$) value of $1.9{\mu}g/mL$ and selective index value of 9.8.
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhun Zhong,Soon-Young Oh,Won-Jae Lee,Ying-Ying Zhang,Soon-Yen Jung,Shi-Guang Li,Ga-Won Lee,왕진석,이희덕,Yeong-Cheol Kim 한국전기전자재료학회 2008 Transactions on Electrical and Electronic Material Vol.9 No.2
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to NiSi₂ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to 650 ˚C and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.