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Two new meroterpenoids produced by the endophytic fungus Penicillium sp. SXH-65
Xinhua Sun,Xianglan Kong,Huquan Gao,Tianjiao Zhu,Guangwei Wu,Qianqun Gu,Dehai Li 대한약학회 2014 Archives of Pharmacal Research Vol.37 No.8
Two new meroterpenoids, arisugacins I (1) andJ (2), together with five known meroterpenoids includingarisugacin B (3), arisugacin F (4), arisugacin G (5), territremB (6) and territrem C (7) were isolated from anendophytic fungus Penicillium sp. SXH-65. Their structureswere determined by extensive spectroscopic experimentsand comparison with literature data. Theircytotoxicities were evaluated against Hela, HL-60 andK562 cell lines, and only 3 and 4 exhibited weak cytotoxicitiesagainst Hela, HL-60 and K562 cell lines withIC50 values ranging from 24 to 60 lM.
Xianglan Kong,Xinhua Ma,Yunying Xie,Shengxin Cai,Tianjiao Zhu,Qian Qun Gu,De-Hai Li 대한약학회 2013 Archives of Pharmacal Research Vol.36 No.6
In our screening for antitubercular agents, fivenaphtho-c-pyrones including two new naphtho-c-pyronesglycosides, indigotides G and H (1 and 2), and two diphenylethers were isolated from the extract of a sponge-derivedfungus Metarhizium anisopliae mxh-99. Their structureswere established on the basis of chemical and spectroscopicevidence. The antitubercular activities of all the compoundswere evaluated against Mycobacterium phlei. The knownisochaetochromin B2 (6) and ustilaginoidin D (7) exhibitedthe highest activity with MICs 50.0 lg/mL.
Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories
Zhenjie Tang,Zhiguo Liu,Xinhua Zhu 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.4
As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the material ’ requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.
High Precision Indoor Positioning System Based on UWB/MINS Integration in NLOS Condition
Yao Surui,Su Yan,Zhu Xinhua 대한전기학회 2022 Journal of Electrical Engineering & Technology Vol.17 No.2
Targeting a seamless and precise indoor localization in NLOS condition, a high-precision positioning system based on UWB/MINS integration is designed in this work. The proposed system is a low-cost and small-size multi-sensor platform in which an MIMU is added to a classical UWB indoor positioning system that implements the TOA algorithm. Particularly, when the lack of suffi cient anchor nodes occurs, compared with the single UWB system, the enhanced performance of this system mainly benefi ts from the eff ective NLOS identifi cation for every node and the tightly-coupled fusion strategy based on extended Kalman fi lter. The former prevents this system from the interference caused by erroneous indirect-path signal, which utilizes the power strength of UWB received signal to distinguish LOS and NLOS condition. The latter takes full advantage of the kinematic constraints to maintain positioning accuracy. Remarkably, when there are only two valid TOA signals, experimental results validate that the performance of the proposed system which provides centimeter-level positioning accuracy outperforms that of traditional UWB positioning system which fails in NLOS condition.
Li Guan Ying,Zhu Xinhua,Cheong Choo Mui 서울대학교 교육연구소 2020 Asia Pacific Education Review Vol.21 No.3
Integrated writing skills that emphasize integrated use of language skills and multiple source materials have attracted increasing attention in language education globally and locally in Hong Kong. This study examines teachers’ conceptions of integrated writing skills and interviewed twenty-five Chinese language teachers. Three conceptions emerged from the data, representing writing as a composite of disconnected parts (Category1), a logical inquiry (Category 2), and a developmental process (Category 3). As the categories move up, the alignment between teachers’ conceptions and the curriculum objectives increases accordingly, with the purpose of writing instruction ranging from fulfilling examination requirements, enhancing reasoning skills, to developing integrated use of language skills. The findings also reveal that although the development of integrated writing skills has been a critical component of the Chinese language curriculum since the first public examination in 2007, teachers’ receptivity toward it still varied greatly. Insufficient professional training, the legitimacy of integrated writing as a curriculum component, and the fossilization of the public examination were the factors that accounted for the differing attitudes among the teachers. The discourse of integrated writing in the Hong Kong context has been centered around high-stakes testing. The unbalanced discourse resulted in an oversimplified view that conflated the teaching and learning of integrated writing with integrated writing assessment. The study contributes to the conversation between integrated writing curriculum, instruction, and assessment. Implications for teacher professional development are discussed.
Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories
Tang, Zhenjie,Liu, Zhiguo,Zhu, Xinhua The Korean Institute of Electrical and Electronic 2010 Transactions on Electrical and Electronic Material Vol.11 No.4
As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.
Zhenjie Tang,Dongqiu Zhao,Rong Li,Xinhua Zhu 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
Charge trapping nonvolatile memory capacitors with ZrO2 as charge trapping layer were fabricated, and the effectsof post annealing atmosphere (NH3 and N2) on their memory storage characteristics were investigated. It was foundthat the memory windows were improved, after annealing treatment. The memory capacitor after NH3 annealingtreatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up toten years, even at 150℃, and excellent endurance (1.5% memory window degradation). The results are attributed todeep level bulk charge traps, induced by using NH3 annealing.
Zhuhong Ding,Bin Gao,Yongshang Wan,Xinhua Zhu,Shengsen Wang,Andrew R. Zimmerman 한국공업화학회 2016 Journal of Industrial and Engineering Chemistry Vol.37 No.-
Hickory biochars were obtained through slow pyrolysis under 350 8C, 450 8C, and 600 8C. Multiplecharacterization techniques were used to characterize the biochars and showed pyrolysis temperatureaffected their O/C ratios, surface areas, cation-exchange capacities, zeta potential, surface acidic groups. As the result, the biochars showed different adsorption ability to Pb(II) and methylene blue in aqueoussolutions, which was due to the important roles of the physicochemical properties of the biochars incontrolling the sorption processes. This work provided a comprehensive evaluation of biochars, and thusexpanded on previous research on effects of pyrolysis temperature on biochar properties.