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Current Status of High-efficiency a-Si/c-Si Heterojunction Solar Cells: A Review
Muhammad Quddamah Khokhar,Shahzada Qamar Hussain,김상호,이선화,Duy Phong Pham,박진주,조은철,이준신 한국신·재생에너지학회 2019 신재생에너지 Vol.15 No.1
Heterojunction with intrinsic thin film (HIT) is a stable and efficient device because it blends the strength of crystalline silicon and amorphous silicon. The cells can be produced at low temperatures, usually below 200°C, which decreases the thermal budget and allows the use of thinner wafers, resulting in a decrease in production cost. Heterojunction silicon solar cells use silicon substrates for both absorption and transport, and a microcrystalline or amorphous thin layer of silicon for the purpose of junction and passivation formation. The top electrode is composed of a metal grid and transparent conductive oxide (TCO). Heterojunction solar cells have attracted considerable attention because they achieve efficiencies up to 26.3, which is close to the theoretical efficiency. The low-temperature process allows the handling of silicon substrates less than 100 μm in thickness with a high yield. The main characteristic is the use of metal contacts in this technology, which are extremely recombination active in conventional diffused junctions, and can be distinguished from the absorber through the introduction of a layer with a wide band gap. A high open circuit voltage is generally achieved with heterojunction devices without the need for valuable patterning technology.
A Review on p-Type Tunnel Oxide Passivated Contact (TOPCon) Solar Cell
Muhammad Quddamah Khokhar,Hasnain Yousuf,정성진,김성헌,Xinyi Fan,김영국,Suresh Kumar Dhungel,이준신 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.3
The primary objectives of solar cell technology are high efficiency, long durability, mass manufacturing, cost effectiveness, and the use of environmentally benign components. Among high-efficiency crystalline silicon (c-Si)-based solar cell types, tunnel oxide passivated contact (TOPCon) solar cells have attracted particular attention because of a multitude of advantages. These include easy processing, high efficiency potential, and availability of raw materials. Due to cheaper wafer pricing, easily compatible with advanced and long-tested PERC solar cell manufacturing process, fabrication of TOPCon solar cells starting with p-type c-Si wafers are significantly more demanding from the standpoint of mass production of solar module. If cutting-edge high-efficiency technologies were used in industrial production, the quality of the p-type wafer may eventually become a bottleneck. Recent production lines elsewhere have developed p-type TOPCon solar cells with 25.19% conversion efficiency using monocrystalline Czochralski (CZ) c-Si wafers. This effectively proves the outstanding viability of p-type TOPCon solar cells for an industrial scale. This review article comprehensively discusses the history of high-efficiency p-type TOPCon solar cells, advancement in various areas to increase effective cell performance, state of commercialization, as well as potential future research opportunities and challenges.
Review of Rear Emitter Silicon Heterojunction Solar Cells
Muhammad Quddamah Khokhar,Shahzada Qamar Hussain,김상호,이선화,Duy Phong Pham,김영국,조은철,이준신 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.2
This inclusive study provides detailed information regarding the evolution of rear emitter silicon heterojunction solar cells. Silicon heterojunction (SHJ) solar cells of a p-type on the rear side have garnered increasing attention for various reasons. First, owing to a limitation of the p-type hydrogenated amorphous silicon layer, further optimization relative to an n-type cannot be achieved, and an accumulation of electrons at the front side allows utilizing an n-type wafer to affi rm a lateral current transport. Second, better thin n-type nanocrystalline silicon (oxide) contact layers compared to p-type wafers are grown, and allow greater freedom in the structural design. The optical properties of the front side’s transparent conductive oxide (TCO) layer can be emphasized owing to a lateral transport on the cells, and majority of the carriers are affi rmed through a Si substrate. In the instance of a rear emitter, the TCO layer is in relief to an adjustment inhibiting the contact resistancebetween TCO/a-Si:H(p). The fabrication was done in such a manner of SHJ rear emitter solar cells that they achieve greateroptimization and overall effi ciency of 23.46%.
Muhammad Quddamah Khokhar,Sanchari Chowdhury,Duy Phong Pham,Shahzada Qamar Hussain,Eun-Chel Cho,Junsin Yi 한국신재생에너지학회 2021 한국신재생에너지학회 학술대회논문집 Vol.2021 No.7
High conversion efficiency can achieve by superior surface passivation and material quality. In this study, a novel passivation contact structure based on nanocrystalline silicon oxide (nc-SiOx) films was investigated. Traditionally, poly silicon junctions in tunnel oxide passivated contact (TOPCon) solar cells possess exceptional junction characteristics, but current losses are noted due to their optical absorption if they are applied in solar cell devices. In this study, we replaced the poly-Si layer in TOPCon solar cells with nc-SiOx to enhance transparency. By employing the cn-SiOx layer, effective surface passivation, carrier selectivity, electrical properties and optical transmission can be used to improve, all are vitally important in devise operation. We optimized the deposited nc-SiOx layer on an ultra-thin (~1.5 nm) silicon dioxide (SiO<sub>2</sub>) tunnel oxide layer to improve recombination current density and carrier lifetime. The passivation characteristics were improved by varying the annealing temperature and thickness of the nc-SiOx layer. The 50 nm thick nc-SiOx layer was capable of yielding a high implied open-circuit voltage (i-Voc) of 739 mV and low contact resistivity (ρ) of 14.2 (mΩ/cm<sup>2</sup>) in addition to a low depleted recombination current density (Jo) of 1.1 fA/cm<sup>2</sup> with a post-deposition annealing temperature up to 950℃. Improved passivation characteristics are the result of a more prominent annealing temperature.
Muhammad Quddamah Khokhar,Shahzada Qamar Hussain,Duy Phong Pham,박형식,Ishrat Sultana,Aamir Razaq,G.T. Chavan,김용국,조은철,이준신 한국물리학회 2020 Current Applied Physics Vol.20 No.8
We report the influence of reactive oxygen (O2) and argon (Ar) plasma based ITO:Zr bi-layers for silicon heterojunction (SHJ) solar cells. The purpose of reactive O2 sputtered ITO:Zr was to improve the Hall mobility and work function while the Ar based ITO:Zr films play an important role to maintain good electrical characteristics. The thickness of reactive O2 based ITO:Zr films was fixed at 15 nm while Ar based films was varied from 65 to 125 nm, respectively. ITO:Zr bi-layers with the thickness of 15/105 nm deposited by O2 and Ar plasma, respectively, showed lowest resistivity of 2.358 × 10−4 Ω cm and high Hall mobility of 39.3 cm2/V · s. All ITO:Zr bi-layers showed an average transmittance of above 80% in the visible wavelength (380–800 nm) region. Work function of ITO:Zr bi-layers was calculated from the X-ray photoelectron spectroscopic (XPS) data. The ITO:Zr work function was enhanced from 5.3 eV to 5.16 eV with the variation of ITO:Zr bi-layers from 15/65 to 15/ 125 nm, respectively. Front barrier height in SHJ solar cells can be modified by using TCO films with high work function. The SHJ solar cells were fabricated by employing the ITO:Zr bi-layer as front anti-reflection coating. The SHJ solar cells fabricated on ITO:Zr bi-layer with the thickness of 15/105 nm showed the best photo-voltage parameters as; Voc = 739 mV, Jsc = 39.12 mA/cm2, FF = 75.97%, η = 21.96%.