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이경호 ( Kyung Holee ) 한국체육사학회 2013 체육사학회지 Vol.18 No.1
박금슬류 김광숙의 예기무는 원래 전통적으로 교방무(敎坊舞) 계통에 속해 있던 춤이 점차 서민적인 춤 쪽으로 그 성격이 변화되어 온 것이다. 이 춤은 대구 권번의 정소산에 의해 박금슬에게 전수되고, 다시 박금슬이 김광숙에게 전수하여 오늘에 이르고 있다. 김광숙은 서울에서 출생하여 전주에서 성장한 다음, 20대에 박금슬 문하에 들어가, 매우 어려운 상황 속에서, 이 춤은 해외에서 전수받게 되었으며, 박금슬이 서거한 뒤 1980년대 중반에 처음으로 재현 공연을 가져 오늘에 이르고 있다. 예기무의 공연구조는 도입부·부채춤·맨손춤·수건춤·접시춤 등 모두 5단계의 과정적 구조를 이루고 있다. 예기무의 주요 춤 동작들을 분석해 보면, 박금슬류 춤 동작들이 골고루 융합되어, 미학적 조화를 이루고 있음을 알 수 있다. Kim Kwang-sook`s ``Yae-ki-moo(藝妓舞)`` of Park Kum-sul School has been transformed from traditional kyo-bang-moo (敎坊舞) to folkdance. This dance was handed down from Jung So-san to Park Kum-sul and from Park Kum-sul to Kim Kwang-sook. Structure of Yae-ki-moo is composed of part of introduction, part of fan dance, part of empty-handed dance, part of towel dance, and part of plate dance. Characteristics of this dance are as follows; total representation of Kisaeng`s life, taking a serious view, joksawi (feet-asctions), motions of feeling like non-moving, total fusion of various of dance styles, dance motions, methods of breath and male-like dynamics, representaion of total being spiritually awakened of life.
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A Ku-Band 5-Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation
Woo-JinChang,Kyung-HoLee 한국전자통신연구원 2003 ETRI Journal Vol.25 No.1
This paper describes the performance of a Ku-band 5-bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5-bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than 7.5° root-mean-square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5-bit phase shifter, the insertion losses were 8.2± 1.4 dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5- bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm×1.65 mm. The packaged phase shifter demonstrated a phase error of less than 11.3° RMS, measured insertion losses of 12.2± 2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm× 6.20 mm.
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홍경원,김희수,Joo-MiYi,Kyung-MiShin,Tae-HyungKim,Jae-WonHuh,Young-ChoonLee,Won-HoLee,TimothyJ.Crow 한국유전학회 2003 Genes & Genomics Vol.25 No.2
A human endogenous retroviral family (HERV-W) has been related to multiple sclerosis virus (SZRV) sequences. The HERV-W family was identified in the cerebrospinal fluids and brains of individuals with schizophrenia. Using cDNA libraries derived from human brains, we performed PCR amplification and identified new 16 HERV-W env elements (9 from human adult brain and 7 from human fetal brain). Those sequences showed a high degre of sequence similarity (89.2-99.6%) with HERV-W env (GenBank acesion no. AF072506). Clones HB-1, HB-9 from adult brain and FB-2, FB-5 from fetal brain showed no frameshift and termination codons by deletion/insertion or point mutation. Synonymous and nonsynonymous calculation indicated that these sequences (HB-1, HB-9, FB-2, FB-5) could be asociated with an active provirus in human brain tisues. In phylogenetic analysis, clones HB-1, HB-9, FB-2, FB-5 containing putative amino acid sequences showed sister relationship with the HERV-W and W-7-1 derived from human chromosome 7. Taken together, our data suggest that the related genes of the HERV-W env sequences are expresed in human brains and may contribute to an understanding of biological function connected to neuropsychiatric diseases.
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Design and Implementation of 40-GHz-Band LNA MMICs with Super Low-Gain Flatness
Jin-HeeLee,Hyung-SupYoon,JaeYeobShim,Kyung-HoLee 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
This paper introduces the design and implementation of 40-GHz-band 4-stage/2-stage low-noise amplier with low-gain atness for wide-band wireless multimedia and satellite communication systems. The 40-GHz-band 4-stage MMIC demonstrate a small signal gain of more than 20 dB, an input return loss of 10.2 dB, and an output return loss of 21.8 dB for 4042 GHz. The gain atness of the 40-GHz-band 4-stage LNA was 0.1 dB for 4042 GHz. The noise gure of the 40 GHz-band 4-stage LNA was simulated to be less than 3.2 dB for 4042 GHz. While the 40-GHz-band 2-stage LNA MMIC demonstrate a small signal gain of more than 10.5 dB, an input return loss of 8.6 dB, and an output return loss of 19.8 dB for 4042 GHz. The gain atness of the 40-GHz-band 2-stage LNA was 0.4 dB for 4042 GHz. The noise gure of the 40-GHz-band 2-stage LNA was simulated to be less than 3.0 dB for 4042 GHz. The chip size of the 2-stage and the 4-stage LNA MMICs were 2.11.7 mm2 and 3.71.7 mm2, respectively.
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Jong-MinLee,Byoung-GueMin,Seong-IlKim,Kyung-HoLee,SungHoPark,In-HoonChoi 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.2
In this study, AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with AlGaAs-ledge structures were fabricated, and their electrical performances at various substrate temperatures were comparatively characterized with respect to DC performances. To improve the surface properties of the HBTs, we employed an AlGaAs-ledge structure by using a simple ledge technique. Compared with the no-ledge HBT, the ledge HBT showed improvements in the current gain about 14\%, and exhibited comparable high-frequency performances. The extracted surface recombination current was $5.13 \times 10^{-7}$ A/$\mu$m, which confirmed that the AlGaAs-ledge structure effectively suppressed the surface recombination. We also present the temperature-dependent electrical performances of HBTs. The temperature coefficient of the base-emitter turn-on voltage was $-$2.29 mV/K, and the offset voltage was increased from 0.172 to 0.247 V as the temperature was increased in the temperature range of 240 - 420 K. The HBT showed a negative temperature coefficient at all collector currents, and the current gain at a collector current of $1 \times 10^{-3}$ A was reduced from 135.6 to 19.11 as the temperature was increased from 240 K to 420 K.
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