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김형래(Hyoungrae Kim),서홍승(Hongseung Seo),정진태(Jintai Chung) 한국소음진동공학회 2011 한국소음진동공학회 학술대회논문집 Vol.2011 No.4
In this paper, we investigate the vibration source of sheet feeding apparatus installed in scanner cover of the digital MFP thorugh frequency analysis. Gearmesh frequency and motor generated frequency were calculated to analyse autospectrum. During driving state, we measure the vibration level. It was found from the siganl analysis that gearmesh frequency and motor generated frequency are identified as vibration source.
The Effect of Buffer Layer on ZnO Nanorods on PES Substrate
Ock, Jaeheon,Lee, Hyunmin,Kim, Sanghyun,Jang, Nakwon,Kim, Hongseung American Scientific Publishers 2016 Journal of nanoscience and nanotechnology Vol.16 No.2
<P>In general, growing ZnO nanorods with the hydrothermal method requires the deposition of ZnO buffer layers. This is the most essential step, because the morphology of ZnO nanorods is strongly influenced by the buffer layer on a flexible substrate. In this work, we study the effect of the buffer layer when ZnO nanorods are grown. ZnO nanorods were grown on ZnO-buffered PES substrates with the hydrothermal method. As a result, it was found that the ZnO buffer layer using PLD had excellent characteristics compared with the ZnO buffer layer using sputtering.</P>
Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy
Myunghoon Jung,Jiho Chang,Dongcheol Oh,고항주,Hongseung Kim,Junsuk Song,Kwanghee Kim,Seunghwan Park,Takafumi Yao 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
High-quality ZnSe thin films were grown on GaAs substrates by using molecular beam epitaxy (MBE). Low-temperature and temperature-dependent photoluminescence (PL) measurements revealed the high crystal quality of the sample. However, photocurrent spectroscopy showed the existence of defects originating from the interface. Insertion of a buffer layer at a low growth temperature is suggested for improving the crystallinity further.
Growth of Cubic GaN on a Nitrided AlGaAs (001) Substrate by Using Hydried Vapor Phase Epitaxy
LEE HOJUN,YANG MIN,AHN HYUNGSOO,CHANG JIHO,조채용,JANG KEUNSUK,KIM HONGSEUNG,김석환,KIM KYOUNGHWA,YI JEONGYOON 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.II
GaN layers were grown on AlGaAs (001) substrates by using hydride vapor phase epitaxy (HVPE). Growth parameters such as the nitridation temperature of the AlGaAs substrate and the growth rate of the GaN layer were found to be critical determinants for the growth of cubic GaN layer. Nitridation of the AlGaAs surface was performed in a NH3 atmosphere at a temperature range of 550 . 700 C. GaN layers were grown at different growth rates on the nitrided AlGaAs substrates. The surface morphologies and the chemical constituents of the nitrided AlGaAs layers were characterized with scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). For the optical and the crystalline characterization of the GaN films, cathodoluminescence (CL) and X-ray diffraction (XRD) were carried out.