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Characterization of MBE-Grown ZnSe Thin Films by Using Photocurrent Spectroscopy
Myunghoon Jung,Jiho Chang,Dongcheol Oh,고항주,Hongseung Kim,Junsuk Song,Kwanghee Kim,Seunghwan Park,Takafumi Yao 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
High-quality ZnSe thin films were grown on GaAs substrates by using molecular beam epitaxy (MBE). Low-temperature and temperature-dependent photoluminescence (PL) measurements revealed the high crystal quality of the sample. However, photocurrent spectroscopy showed the existence of defects originating from the interface. Insertion of a buffer layer at a low growth temperature is suggested for improving the crystallinity further.