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Effect of growth interruption on InN / GaN single quantum well structures
S.-Y. Kwon,H. J. Kim,H. Na,H.-C. Seo,H. J. Kim,Y. Shin,Y.-W. Kim,S. Yoon,H.-J. Oh,C. Sone,Y. Park,Y. P. Sun,Y.-H. Cho,H. M. Cheong,E. Yoon 한국진공학회(ASCT) 2003 Applied Science and Convergence Technology Vol.12 No.S1
We successfully grew InN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. We speculate that relatively high growth temperature (730℃) of InN layer enhanced the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the InN layer thickness reduced from 2.5 ㎚ (without GI) to about 1 ㎚ (with 10 sec GI) and the InN/GaN interface became very flat with 10 sec GI. We suggest that decomposition and mass transport processes on InN during GI is responsible for these phenomena.
성인에 있어서의 혈장제 백신의 면역 지속성과 면역 증강 반응
선희식(H . S . Sun),정규원(K . W . Chung),김부성(B . S . Kim),노재철(J . C . Rho),정환국(W . K . Chung) 대한내과학회 1987 대한내과학회지 Vol.32 No.6
N/A To find out the persistence of the anti-HBs level in adult recipients after primary immunization with a vaccine and secondary boosting responses with another vaccine, we screened subjects who had no HBsAg, anti-HBs and anti-HBc before immunization with radioimmunoassay technique, and submitted them to primary immunization with a plasma-derived vaccine and secondary boosting with another plasma derivative. Finally, we could select 36 subjects who were possible to complete the follow-up study until after secondary boosting. The primary booster injection was performed at 6 months and secondary boosting at the 25th month after initial vaccination. Among 11 recipients, in whom antibody levels were increased by, more than 9,9 R.U. after primary boosting with 3 μg dose of vaccine prepared by A. Co. (V.A.) (well responders), anti-HBs levels decreased in all recipients at the 25th month after first vaccine treatment, and 4 of these showed negative seroconversion. In another 11 recipients, who had no antihody responses after inadequate primary vaccine treatment with V.A. (non-responders), no anti-HBs was found in their blood 25 months after vaccine initiation. At one month after secondary booster injection with 20 pg dose of hepatitis B vaccine provided by B. Co. (V. B.), a marked rise of anti-HBs titer was observed in all 11 well responders, and 6 of the 11 non-responders also responded. Among participants in this study, 14 who responded to primary immunization with V.B. but in whom no primary boosting effect was seen, 3 showed sero-negative conversion 25 months after vaccine initiation. A rise of more than 9.9R.U. of anti-HBs, after the secondary booster injection with V.A., was observed in 6 of the 14 subjects even in sero-negative cases.
3-phase Voltage Sag and Outage Generator for the Test of STS in Power System
H.S. Kim,J.H. Jung,J.W. Bae,B.G. Seo,D.U. Sun,H.S. Jeong,E.C. Nho,H.G. Kim,T.W. Chun 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6
This paper deals with power quality disturbance generator for the test of STS in power system. The STS used in this system is composed with SCR thyristors. It is necessary to connect the thyristors in series in high voltage system. The major components consisting the generator are SCR thyristors, series transformers, and sliding type auto transformers, therefore, the system reliability is very high. Operating characteristics of the generator are analyzed in each mode of voltage sag and outage. Simulation is carried out for the system with the rated voltage of 330V and 10MVA power rating.