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Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device
Yu, Byoung-Gon,You, In-Kyu,Lee, Won-Jae,Ryu, Sang-Ouk,Kim, Kwi-Dong,Yoon, Sung-Min,Cho, Seong-Mok,Lee, Nam-Yeal,Shin, Woong-Chul The Institute of Electronics and Information Engin 2002 Journal of semiconductor technology and science Vol.2 No.3
Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.
염소(Chlorine)가 도입된 SiO₂/Si 계면을 가지는 게이트 산화막의 특성 분석
유병곤(Byoung-Gon Yu),유종선(Jong-Son Lyu),노태문(Tae-Moon Roh),남기수(Kee-Soo Nam) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
두께가 6-10 ㎚인 게이트 산화막의 계면에 염소(Cl)를 도입시킨 n-MOS capacitor 및 n-MOSFET을 제작하여 물성적인 방법 (SIMS, ESCA)과 전기적인 방법에 의해서 소자의 특성을 분석, 평가하였다. Last step TCA법을 이용하여 성장시킨 산화막은 No TCA법으로 성장시킨 것보다 mobility가 7% 정도 증가하였고, 결함 밀도도 감소하였다. Time-zero-dielectric-breakdown(TZDB)으로 측정한 결과, Cl을 도입한 막의 파괴 전계(breakdown field)는 18 MV/㎝인데, 이것은 Cl을 도입하지 않은 것보다 약 0.6 MV/㎝ 정도 높은 값이다 . 또한 time-dependent-dielectric-breakdown(TDDB) 결과로부터 수명이 20 년 이상인 것으로 평가되었고, hot carrier 신뢰성 측정으로부터 평가한 소자의 수명도 양호한 것으로 나타났다. 이상의 결과에서 Cl을 계면에 도입시킨 게이트 산화막을 가진 소자가 좋은 특성을 나타내고 있으므로 Last step TCA법을 종래의 산화막 성장 방법 대신에 사용하면 MOSFET 소자의 새로운 게이트 절연막 성장법으로서 대단히 유용할 것으로 생각된다. We have developed a technique for growing thin oxides (6~10 ㎚) by the Last step TCA method. N-channel metal-ox ide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated SiO₂/Si interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last step TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the SiO₂/Si interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/㎝, 0.6 MV/㎝ higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a SiO₂/Si interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in shortchannel MOS devices.
Nanoscale Control of Cathode Materials for the Enhanced Cycle-Life Performances
( Yu Hong Oh ),( Joon Gon Lee ),( Byoung Soo Kim ),( Byung Woo Park ) 대한금속재료학회 ( 구 대한금속학회 ) 2008 ELECTRONIC MATERIALS LETTERS Vol.4 No.1
Metal-phosphate-coated LiCoO2 cathode materials were studied for the electrochemical properties. Al-P-Ocoated LiCoO2 exhibited the best cycle-life performance among the examined metal-phosphate-coated LiCoO2. To investigate the nanostructural effect of AlPO4-coating layer, three different phases of AlPO4 nanoparticles were synthesized. The LiCoO2 thin-film cathodes coated with amorphous AlPO4 followed by annealing showed the best cycle-life performance, and effectively suppressed the degradation of Li+-diffusion kinetics during cycling.
인천연안 대형저서동물 군집 변동에 미치는 환경요인의 영향
유옥환 ( Ok Hwan Yu ),고병설 ( Byoung Seol Koh ),이형곤 ( Hyung Gon Lee ),이재학 ( Jae Hac Lee ) 한국수산과학회 2004 한국수산과학회지 Vol.37 No.5
N/A In coastal area of Inchon, dredging and the disposal of dredged material for sea-wall construction and reclamation have increased in recent years. These activities may impact the benthic environment and result in changes in benthic communities, but little information is available on the extent and direction of these changes. We investigated whether there have been changes in the dominant macrobenthic species and benthic community over the last decade, and explored the relationship between environmental variables and spatial patterns of macrobenthic community structure. We sampled macrobenthos and recorded environmental variables in the coastal habitats of Inchon in March and June 2004. In total, 212 macrobenthic species were recorded during this study, predominately crustaceans (34%), mollusks (32%) and polychaetes (21%). The mean density of macrobenthos was 1,393 ind./㎡. The most abundant species was Amphioplus japonicus (20.5%), followed by Heteromastus filifornris (14.4%), Theora fragilis (8.2%) and Ampharete sp. (4.0%). Over the past decade the dominant macrobenthic species in this area shifted. Multivariate analysis (multidimensional scaling) revealed significant differences in community structure among three regions: the middle part of the sampling area (B), site 8 (C) and other sites (A). Mean density varied significantly among the three regions, but no differences in the number of species and diversity (H`) were observed. The distribution of the macrobenthic community was affected by environmental variables such as percentage sand content and sediment kurtosis. Species that were important in different areas included A. japonicus in region A, Raeta puchella in region B and T. fragilis in region C. The important species in regions B and C were filter-feeding bivalves, and the abundance of these species may be related to the increase in percentage sand content. We suggest that the sediment composition (percentage sand content) may be an important factor in determining the dominant species and structure of the macrobenthic communities in coastal Inchon. Long-term monitoring programs are necessary to understand ongoing changes in the benthic communities of this area.
Nam-Yeal Lee,Byoung-Gon Yu,In-Kyu You,Kwang-Ho Kim,Kwi-Dong Kim,Sang-Ouk Ryu,Seong-Mok Cho,Soon Won Jung,윤성민,Woong-Chul Shin 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.43 No.51
The switching characteristics of sol-gel derived ferroelectric (Bi,La)4Ti3O12 (BLT) thin lm capacitors were investigated for nonvolatile ferroelectric random access memory (FeRAM) and onetransistor- type metal-ferroelectric-insulator-semiconductor eld eect transistor (MFIS-FET) applications. We could eectively modulate the electrical properties of the BLT thin lms by controlling their crystallographic orientations, which could be performed by changing RTA temperature conditions during the rst annealing process. We characterized the ferroelectric switching properties of the prepared BLT lms and obtained the important parameters describing their switching characteristics by using a double-pulse method. The results for switching time (ts) of the BLT lms with preferred c-axis orientations and (117) orientations were measured to be in the range from 108 ns to 220 ns and from 60 ns to 89 ns at applied voltages from 8 V to 5 V, respectively; the capacitor size was 200 200 m2. The ferroelectric switching event of c-axis-oriented BLT may be said to nish in a shorter time than that of (117)-oriented BLT. On the other hand, the dimensionality factors (n) of both BLT lms were observed to be in the range of about 1.9 2.1, regardless of the capacitor size and BLT orientation.