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백내장 수술 후 발생한 스타필로코쿠스 루그두넨시스 안내염 1예
한상윤(Sang Youn Han),이태곤(Tae Gon Lee) 대한안과학회 2016 대한안과학회지 Vol.57 No.6
목적: 백내장 수술 후 발생한 Staphylococcus lugdunensis 안내염 1예를 경험하였기에 이를 보고하고자 한다. 증례요약: 59세 여자 환자가 본원에서 좌안 백내장 수술을 받은 후 13일째 발생한 좌안의 통증과 시력저하를 주소로 내원하였다. 좌안의 최대교정시력은 20/200이었고, 세극등현미경 검사에서 좌안의 결막충혈, 전방 내 다수의 염증세포, 1 mm 가량의 전방축농과 삼출성 막이 관찰되었으며 안저는 흐려 잘 보이지 않았다. 전방천자 및 유리체강내항생제주입술(vancomycin 1.0 mg/0.1 mL, ceftazidime 2.0 mg/0.1 mL)을 시행하고 입원하였는데, 다음 날 증상의 호전이 없고 그람양성구균이 자라는 것이 확인되어, 유리체절제술과 함께 유리체강내항생제주입술(vancomycin 1.0 mg/0.1 mL, dexamethasone 0.5 mg/0.1 mL)을 추가로 시행하였다. 수술 7일째, 균 배양검사 결과 Staphylococcus lugdunensis가 동정되었고, 수술 11일째, 염증이 조절되고 증상이 호전되어 퇴원하였다. 수술 3개월 후, 좌안의 최대교정시력은 20/20이며, 안내염의 재발 및 안저의 이상소견은 관찰되지 않았다. <대한안과학회지 2016;57(6):999-1003> Purpose: To report a case of Staphylococcus lugdunensis endophthalmitis following cataract extraction and intraocular lens implantation. Case summary: A 59-year-old woman presented with unilateral vision impairment and eyeball pain in her left eye, thirteen days after phacoemulsification and posterior chamber intraocular lens implantation. Best-corrected visual acuity of her left eye was 20/200. Slit lamp examination of her left eye revealed a severe conjunctival injection, severe chamber reactions with exudative membranes, hypopyon (about 1 mm) in the anterior chamber, and the fundus was not visible. Before the patient was admitted to the hospital, we cultured samples of aqueous fluid and performed an intravitreal antibiotics injection (vancomycin 1.0 mg/0.1 mL, ceftazidime 2.0 mg/0.1 mL). However, on the next day, because the inflammatory reactions of the anterior chamber and vitreous cavity were not improved and Gram positive cocci was confirmed, we performed a pars plana vitrectomy and an additional intravitreal antibiotics injection (vancomycin 1.0 mg/0.1 mL, dexamethasone 0.5 mg/0.1 mL). Seven days after the surgery, Staphylococcus lugdunensis was identified in the aqueous fluids culture. 11 days after the surgery, her inflammation and symptoms were improved and therefore, she could be discharged. Three months after the surgery, best-corrected visual acuity of her left eye was 20/20 and there was no evidence of recurrence of endophthalmitis and no abnormal findings in her fundus. J Korean Ophthalmol Soc 2016;57(6):999-1003
습성 나이관련황반변성으로 진단된 90세 이상 초고령 환자의 특성
이윤곤(Youn Gon Lee),한상윤(Sang Yun Han),한재욱(Jae Wook Han),김종우(Jong Woo Kim),김철구(Jong Woo Kim),이동원(Youn Gon Lee),김재휘(Jae Hui Kim) 대한안과학회 2018 대한안과학회지 Vol.59 No.5
Purpose: To evaluate the characteristics of patients aged ≥ 90 years who were diagnosed with neovascular age-related macular degeneration (AMD). Methods: A retrospective review of medical records was performed for 44 patients aged ≥ 90 years diagnosed with neovascular AMD. History of cerebrovascular or cardiovascular disorder and visual acuity at diagnosis were assessed. Fellow eye visual acuity data were also collected. When the fellow eye visual acuity was worse than 0.5, the primary reason for the visual deterioration was identified. Results: The mean patient age was 91.5 ± 1.5 years (range: 90–95 years). Ten (22.7%) patients had histories of cerebrovascular or cardiovascular disorders. The mean logarithm of the minimal angle of resolution (logMAR) of visual acuity was 1.11 ± 0.51 and the visual acuity was worse than 0.1 in 20 eyes (45.5%). The fellow eye visual acuity was worse than 0.5 in 26 eyes (59.1%). The primary reason was neovascular or atrophic AMD in 23 eyes (88.5%). Conclusions: The incidence of cerebrovascular or cardiovascular disorders was relatively high in patients aged ≥ 90 years. Patients also had poor visual acuity at diagnosis and a high incidence of fellow eye visual deterioration. These systemic conditions should be considered when treating these patients. Additionally, a regular ophthalmic examination is recommended for the early detection of these disorders. J Korean Ophthalmol Soc 2018;59(5):444-450
두 가지 저함수율 비이온계 실리콘 하이드로겔 치료용 콘택트렌즈에 따른 굴절교정레이저각막절제술 후 통증의 비교
고경민(Kyung Min Koh),한상윤(Sang Youn Han),권영아(Young A Kwon),송상률(Sang Wroul Song),김병엽(Byoung Yeop Kim),김용란(Yong Ran Kim),손용호(Yong Ho Sohn),정재림(Jae Lim Chung) 대한검안학회 2015 Annals of optometry and contact lens Vol.14 No.2
Purpose: To compare of the pain after photorefractive keratectomy (PRK) according to two kinds of silicone hydrogel contact lenses. Methods: 92 eyes of 46 patients who underwent PRK surgery were prospectively investigated. Each patient was randomly assigned senofilcon A in one eye and lotrafilcon B in the other eye. Pain score (0-10) was assessed at postoperative day 0, 1, 2, 3 and 4 using visual analogue scale. Results: The pain scores (mean ± SD) of senofilcon A and lotrafilcon B were 1.6 ± 1.4, 2.2 ± 1.5 on postoperative day (POD) #0 (p = 0.0029), 2.9 ± 1.5, 3.7 ± 1.5 on POD # 1 (p = 0.009), 2.1 ± 1.2, 2.2 ± 1.4 on POD #2 (p = 0.6208), 0.5 ± 0.7, 0.7 ± 0.8 on POD #3 (p = 0.8375), and 0.1 ± 0.3, 0.1 ± 0.3 on POD #4 (p = 0.1332) respectively. Conclusions: Senofilcon A contributed to reduce postoperative pain effectively in patients undergoing PRK due to lens design, material and moisture-rich properties.
광검출기 응용을 위하여 스퍼터된 미세결정 SiGe 박막성장 연구
김도영,김선조,김형준,한상윤,송준호,Kim, Do-Young,Kim, Sun-Jo,Kim, Hyung-Jun,Han, Sang-Youn,Song, Jun-Ho 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.6
For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.
방사광 광전자 분광기를 이용한 Ni/SiC에서의 열처리 온도에 따른계면 구조 변화 연구
韓相允,金鐘奎,金起弘,金秀泳,李鐘覽 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.5
The changes in atomic bonding state at the interface of ultra thin Ni film (25 Å) with SiC were investigated as a function of annealing temperature using synchrotron radiation photoemission spectroscopy (SRPES). From these, the early stage in the reaction to form Ni silicide was examined. It was found that Ni_2Si began to form below 600℃. However, at 300℃ Ni atoms migrated on the surface of SiC, leading to the formation of Ni islands and the substrate is partially exposed, prior to the formation of Ni silicide. When Ni_2Si was formed, the binding energy of SiC bond was not changed, but work function of the contact layer was increased. This provides the evidence that Schottky barrier height was increased with the formation of Ni silicide via the increase in work function of contact layer.
화학적 표면처리에 따른 다이아몬드 박막에서의 전계 방출 연구
백영준,이종람,한상윤 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.7
Field emission of diamond film was enhanced after surface treatments using boiling HCl and aqua regia solutions. The current generated by the emission of electron was increased and the threshold field was reduced from 18.1 to 13.8 V/㎛ by the surface treatment. The surface roughness was increased by 24.4% with aqua regia treatment, but the calculated current-voltage curves were not consistent with the measured ones. It was found that the binding energies of C-C and C-O bonds were increased after the aqua regia treatment and the Fermi level of the aqua-rigia-treated surface was increased by 2.2 eV. This provides evidence that the enhancement of electron emission originated from the reduction of work function, caused by the chemisorption of oxygen atoms. The effective electron affinity changed to negative, leading to the reduction of the potential barrier height and width for electron emission at the surface of diamond.
방사광 가속기를 이용한 (NH4)2Sx 처리 AlGaAs 표면의 X-선 광전자 분석 연구
최경진,김종규,김봉수,김기정,강태희,류성욱,장호원,이종람,한상윤 대한금속재료학회(대한금속학회) 2000 대한금속·재료학회지 Vol.38 No.8
Atomic bonding states of the surface of (NH₄)₂S_x-treated AlGaAs and their change with annealing temperature were investigated by synchrotron radiation photoemission spectroscopy. The surface of AlGaAs sample was passivated using (NH₄)₂S_x solution after the removal of native oxide by NH₄OH solution. This (NH₄)₄S_x passivation was effective in removing Ga-O and As-O bondings, and resulted in the formation of Ga-S, As-S and Al-S bondings. Sulfur atoms migrated from As and Ga to Al atoms when the sample was annealed in ultra-high vacuum. The valence band spectra for the (NH₄)₂S_x treated AlGaAs surface showed that the Fermi level shifted by 0.21 eV after annealing at 550℃. This resulted from the increase of Ga or Al vacancies which energy states located near the valence band maximum.