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근접장착식 촉매장치의 유동분포 측정 및 해석에 관한 연구
조용석,김득상,주영철,Jo, Yong-Seok,Kim, Deuk-Sang,Ju, Yeong-Cheol 대한기계학회 2001 大韓機械學會論文集B Vol.25 No.4
In this study, results from an experimental and numerical study of flow distribution in a close-coupled catalytic converter (CCC) are presented. The experiments were carried out using a glow measurement system. Flow distribution at the exit of the first monolith in the CCC was measured using a pitot tube under steady and transient flow conditions. Numerical analysis was done using a CF D code at the same test conditions, and the results were compared with the experimental results. Experimental results showed that the uniformity index of exhaust gas velocity decreases as Reynolds number increases. Under the steady flow conditions, flow through each exhaust pipe concentrates on a small region of the monolith. Under the transient flow conditions, flow through each exhaust pipe with the engine firing order interacts with each other to spread the flow over the monolith face. The numerical analysis results support the experimental results, and help explain the flow pattern in the entry region of the CCC.
GaN 완충층 두께가 GaN 에피층의 특성에 미치는 영향
조용석,고의관,박용주,김은규,황성민,임시종,변동진,Jo, Yong-Seok,Go, Ui-Gwan,Park, Yong-Ju,Kim, Eun-Gyu,Hwang, Seong-Min,Im, Si-Jong,Byeon, Dong-Jin 한국재료학회 2001 한국재료학회지 Vol.11 No.7
Metal organic chemical vapor deposition (MOCVB)법을 사용하여 sapphire (0001) 기판 위에 GaN 환충층을 성장하고, 그 위에 GaN 에피층을 성장하였다. GaN 완충층은 55$0^{\circ}C$에서 약 26 nm에서 130 nm까지 각각 다른 두께로 성장하였고, GaN 에피층은 110$0^{\circ}C$에서 약 4 $\mu\textrm{m}$의 두께로 성장하였다. GaN 완충층 성장 후 atomic force microscopy (AFM)으로 표면 형상을 측정하였다. GaN 완충층의 두께가 두꺼워질수록 GaN 에피층의 표면이 매끈해지는 것을 scanning electron microscopy (SEM)으로 관찰하였다. 이것으로 GaN 에피층의 표면은 완충층의 두께와 표면 거칠기와 관계가 있다는 것을 알 수 있었다. GaN 에피층의 결정학적 특성을 double crystal X-ray diffraction (DCXRD)와 Raman spectroscopy로 측정하였다. 성장된 GaN 에퍼층의 광학적 특성을 photoluminescence (PL)로 조사한 결과 두께가 두꺼운 완충층 위에 성장된 에퍼층의 결정성이 더 좋은 반면, 내부 잔류응력은 증가하는 결과를 보였다. 이러한 사실들로부터 완충층의 두께가 두꺼워짐에 따라 내부 자유에너지가 감소하여 에피층 성장시 측면성장을 도와 표면이 매끈해지고, 결정성이 좋아졌다. GaN buffer layer and epilayer have been grown on sapphire (0001) by metal organic chemical vapor deposition (MOCVD). GaN buffer layer ranging from 26 nm to 130 nm in thickness was grown at 55$0^{\circ}C$ prior to the 4 $\mu\textrm{m}$ thick GaN epitaxial deposition at 110$0^{\circ}C$. After GaN buffer layer growth, buffer layer surface was examined by atomic force microscopy (AFM). As the thickness of GaN buffer layer was increased, surface morphology of GaN epilayer was investigated by scanning electron microscopy (SEM). Double crystal X-ray diffraction (DCXRD) and Raman spectroscopy were employed to study crystallinity of GaN epilayers. Optical properties of GaN epilayers were measured by photoluminescence (PL). The epilayer grown with a thin buffer layer had rough surface, and the epilayer grown with a thick buffer layer had mirror-like surface of epilayer. Although the stress on the latter was larger than on the former, its crystallinity was much better. These results imply that the internal free energy is decreased in case of the thick buffer layer. Decrease in internal free energy promotes the lateral growth of the GaN film, which results in the smoother surface and better crystallinity.
성낙원,정동수,조용석,Seong, Nak-Won,Jeong, Dong-Su,Jo, Yong-Seok 한국기계연구원 1987 기계연구원소보 Vol.17 No.-
A mechanical linkage system to measure the operating temperature of the piston is developed and installed to the engine. Actual temperature distribution is measured for comparison with the numerical results. Heat transfer at the piston is analyzed using an FEM program. Thermal boundary condition of piston surface is determined by analytical and empirical methods. The temperature distribution and the thermal deformation are obtained by the FEM program.
김선홍(Kim Sun-Hong),조용석(Jo Yong-Seok),김동기(Kim Dong-Ki),박병은(Park Byung-Eun) 한국철도학회 2007 한국철도학회 학술발표대회논문집 Vol.- No.-
This paper is about the examination and selection of the special method applied to the railway tunnel which will lie under the road. Moreover, the road was constructed on the weak ground. Eventually, we select DSM, considering geological condition, stability during construction of the railway tunnel, and economic efficiency. The 3D-analysis, performed with PENTAGON-3D and MIDAS CIVIL-3D, shows that allowable standards are all satisfied. In the design of the railroad tunnel under the road at low depth, this paper will give useful data for the selection of the tunneling method.
RF Sputtering의 증착 조건에 따른 HfO<sub>2</sub> 박막의 Nanocrystal에 의한 Nano-Mechanics 특성 연구
김주영,김수인,이규영,권구은,김민석,엄승현,정현진,조용석,박승호,이창우,Kim, Joo-Young,Kim, Soo-In,Lee, Kyu-Young,Kwon, Ku-Eun,Kim, Min-Suk,Eum, Seoung-Hyun,Jung, Hyun-Jean,Jo, Yong-Seok,Park, Seung-Ho,Lee, Chang-Woo 한국진공학회 2012 Applied Science and Convergence Technology Vol.21 No.5
현재 Hf (Hafnium)을 기반으로한 게이트 유전체의 연구는 여러 분야에서 다양하게 진행되어져 왔다. 이는 기존의 $SiO_2$보다 유전상수 값이 크고, 또한 계속되는 scaling-down 공정에서도 양자역학적인 터널링을 차단하는 특성이 뛰어나기 때문이다. MOSFET 구조에서 유전체 박막의 두께 감소로 인한 전기적 특성 저하를 보완하기 위해서 high-K 재료가 대두되었고 현재 주를 이루고 있다. 그러나 현재까지 $HfO_2$에 대한 nano-mechanical 특성 연구는 부족한 상태이므로 본 연구에서는 게이트 절연층으로 최적화하기 위하여 $HfO_2$ 박막의 nano-mechanical properties를 자세히 조사하였다. 시료는 rf magnetron sputter를 이용하여 Si (silicon) 기판 위에 Hafnium target으로 산소유량(4, 8 sccm)을 달리하여 증착하였고, 이후 furnace에서 400에서 $800^{\circ}C$까지 질소분위기에서 20분간 열처리를 실시하였다. 실험결과 산소 유량을 8 sccm으로 증착한 시료가 열처리 온도가 증가할수록 누설전류 특성 성능이 우수 해졌다. Nano-indenter로 측정하고 Weibull distribution으로 정량적 계산을 한 결과, $HfO_2$ 박막의 stress는 as-deposited 시료를 기준으로 $400^{\circ}C$에서는 tensile stress로 변화되었다. 그러나 온도가 증가(600, $800^{\circ}C$)할수록 compressive stress로 변화 되었다. 특히, $400^{\circ}C$ 열처리한 시료에서 hardness 값이 (산소유량 4 sccm : 5.35 GPa, 8 sccm : 5.54 GPa) 가장 감소되었다. 반면에 $800^{\circ}C$ 열처리한 시료에서는(산소유량 4 sccm : 8.09 GPa, 8 sccm : 8.17 GPa) 크게 증가된 것을 확인하였다. 이를 통해 온도에 따른 $HfO_2$ 박막의 stress 변화를 해석하였다. Over the last decade, the hafnium-based gate dielectric materials have been studied for many application fields. Because these materials had excellent behaviors for suppressing the quantum-mechanical tunneling through the thinner dielectric layer with higher dielectric constant (high-K) than $SiO_2$ gate oxides. Although high-K materials compensated the deterioration of electrical properties for decreasing the thickness of dielectric layer in MOSFET structure, their nano-mechanical properties of $HfO_2$ thin film features were hardly known. Thus, we examined nano-mechanical properties of the Hafnium oxide ($HfO_2$) thin film in order to optimize the gate dielectric layer. The $HfO_2$ thin films were deposited by rf magnetron sputter using hafnium (99.99%) target according to various oxygen gas flows. After deposition, the $HfO_2$ thin films were annealed after annealing at $400^{\circ}C$, $600^{\circ}C$ and $800^{\circ}C$ for 20 min in nitrogen ambient. From the results, the current density of $HfO_2$ thin film for 8 sccm oxygen gas flow became better performance with increasing annealing temperature. The nano-indenter and Weibull distribution were measured by a quantitative calculation of the thin film stress. The $HfO_2$ thin film after annealing at $400^{\circ}C$ had tensile stress. However, the $HfO_2$ thin film with increasing the annealing temperature up to $800^{\circ}C$ had changed compressive stress. This could be due to the nanocrystal of the $HfO_2$ thin film. In particular, the $HfO_2$ thin film after annealing at $400^{\circ}C$ had lower tensile stress, such as 5.35 GPa for the oxygen gas flow of 4 sccm and 5.54 GPa for the oxygen gas flow of 8 sccm. While the $HfO_2$ thin film after annealing at $800^{\circ}C$ had increased the stress value, such as 9.09 GPa for the oxygen gas flow of 4 sccm and 8.17 GPa for the oxygen gas flow of 8 sccm. From these results, the temperature dependence of stress state of $HfO_2$ thin films were understood.