Genome sequence of Veillonella atypica KHUD-V1 isolated from a human subgingival dental plaque of periodontitis lesion

이재형,신승윤,이한,양석빈,장은영,류재인,이진용,문지회,Lee, Jae-Hyung,Shin, Seung-Yun,Lee, Han,Yang, Seok Bin,Jang, Eun-Young,Ryu, Jae-In,Lee, Jin-Yong,Moon, Ji-Hoi The Microbiological Society of Korea 2019 미생물학회지 Vol.55 No.1

본 논문에서는 한국인 만성 치주염 환자의 치은연하치태에서 분리된 Veillonella atypica KHUD-V1의 유전체 서열을 보고한다. 다른 V. atypica 균주와 달리, KHUD-V1에서는 프로 파지 및 이와 관련된 것으로 추정되는 여러 병독성 인자가 확인되었다. V. atypica KHUD-V1 균주 및 이 균주의 유전체 서열정보는 Veillonella의 유전체 다양성을 진화론적 관점에서 이해하고, V. atypica의 병독성 및 유전적 다양성에 기여하는 프로파지의 역할을 연구하는데 유용할 것이다. Here we report the genome sequence of Veillonella atypica strain KHUD-V1 isolated from subgingival dental plaque of Korean chronic periodontitis patients. Unlike other V. atypica strains, KHUD-V1 carries two prophage regions and prophage remnants, as well as several genes homologous to prophage-associated virulence factors, such as virulence-associated protein E, a Clp protease, and a toxin-antitoxin system. The isolate and its genome sequence obtained here will aid to understand the diversity of the genome architecture of Veillonella within an evolutionary framework and the role of prophages that contribute to the genetic diversity as well as the virulence of V. atypica.

설하 신경 마비로 인한 설마비 환자 치험 1례

이재형,한성준,이엄지,이정은,남성욱,하나연,김진성,Lee, Jae-hyung,Han, Seong-jun,Lee, Eom-jee,Lee, Jung-eun,Nam, Seong-uk,Ha, Na-yeon,Kim, Jin-sung 대한한방내과학회 2016 大韓韓方內科學會誌 Vol.37 No.5

Hypoglossal nerve palsy is an uncommon neurologic disorder. We report a 67-year-old Korean male with tongue paralysis due to hypoglossal nerve palsy. He had complaints associated only with tongue paralysis and was treated with herbal medicine and electric acupuncture for 12 days. We evaluated his tongue paralysis severity by a numeric rating scale (NRS) and the angle of tongue deviation. After 12 days of treatment, the NRS score showed improvement of his complaints, and the angle of tongue deviation was decreased. Korean medicine could therefore be an effective treatment choice for hypoglossal nerve palsy.

CdTe 화합물 박막 태양전지 기술개발 동향

이재형,김도영,임동건,최원석,Lee, Jae-Hyeong,Kim, Do-Yeong,Im, Dong-Geon,Choe, Won-Seok 한국전기전자재료학회 2011 전기전자재료 Vol.24 No.10

원형 단면을 갖는 헬리컬 스프링에 대한 파동

이재형,허승진,Lee, Jae-Hyeong,Heo, Seung-Jin 대한기계학회 2001 大韓機械學會論文集A Vol.25 No.5

The governing partial differential equations of a helical spring with a circular section were derived from Frenet formulas and Timoshenko beam theory. These were solved to give the dispersion relationship between wave number and frequency along with wave form. Wave motions of helical springs are categorized by 4 regimes. In the first regime, the lower frequency area, the torsional and extensional waves of the spring are predominant and two waves are composite wave motions involving lateral motion of the coils and rotation of the coils about a horizontal axis. All waves are propagating in the second regime. The wave of the extensional motion of the spring and one wave of transverse motion of a wire change from travelling waves to near field waves in the third regime. Both waves excited by both axial and transverse motion are predominant in the fourth regime.

CdZnS/CdTe 이종접합의 커패시턴스-전압 특성에 관한 연구

이재형,Lee, Jae-Hyeong 한국정보통신학회 2011 한국정보통신학회논문지 Vol.15 No.6

본 연구에서는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 커패시턴스-전압 특성을 조사하였다. CdS/CdTe 접합의 경우, 역방향 바이어스가 증가함에 따라 공핍층의 폭이 커져 커패시턴스 값이 약간 감소하였으나 CdZnS/CdTe 접합에서는 CdTe 박막 내에서의 공핍층 폭이 바이어스에 크게 영향을 받지 않아 커패시턴스 값이 역방향 바이어스에 따라 거의 변화가 없었다. 바이어스 전압을 인가하지 않은 상태에서의 공핍층 폭은 높은 CdZnS 박막의 비저항 및 낮은 캐리어 농도로 인해 CdS/CdTe 접합보다 CdZnS/CdTe 접합에서 보다 큰 값을 나타내었다. CdZnS/CdTe 태양전지의 개방전압은 Zn의 비율이 커짐에 따라 CdZnS 박막과 CdTe 박막의 전자 친화력 차이의 감소로 인하여 크게 증가하였으나, Zn 비율이 0.35 이상인 경우 오히려 감소함을 알 수 있었다. 또한 CdZnS 박막의 높은 비저항이 태양전지의 직렬저항을 상승시켜 전지의 변환 효율은 오히려 감소함을 알 수 있었다. In this work, we fabricated the CdZnS/CdTe heterojunction and investigated the C-V characteristics to determine the depletion width and the charge density distribution. A parallel experiment on CdS/CdTe heterojunction was also carried out for comparison. The depletion region width, for CdZnS/CdTe heterojunction, was nearly constant, regardless of bias voltage. However, the depletion region was wider than that of CdS/CdTe heterojunction due to high resistivity of CdZnS film. The interface charge density of CdZnS/CdTe heterojunction was increased linearly with the bias voltage and showed lower values than those for CdS/CdTe junction. The open circuit voltage of CdZnS/CdTe heterojunction solar cells increased with zinc mole ratio due to reducing of the electron affinity difference between CdZnS and CdTe films. However, the increase of series resistance due to the high resistivity of Cd1-xZnxS films results in reducing conversion efficiency.

SMC 압축성형공정에서의 열변형에 관한 유한요소해석

이재형,이응식,윤성기,Lee, Jae-Hyoung,Lee, Eung-Shik,Youn, Sung-Kie 대한기계학회 1997 大韓機械學會論文集A Vol.21 No.1

Thermally-induced deformation in SMC(Sheet Molding Compound) products is analyzed using three dimensional finite element method. Planar fiber orientation, which causes the anisotropic material properties, is calculated through the flow analysis during the compression stage of the mold. Also curing process is analyzed to predict temperature profile which has significant effects on warpage of SMC products. Through the developed procedure, effects of various process conditions such as charge location, mold temperature, fiber contents, and fiber orientations on deformation of final products are studied. and processing strategies are proposed to reduce the warpage and the shrinkage.

AlN/hBN 복합재료의 기계적 성질

이재형,안현욱,윤영식,조명우,조원승,Lee, Jaehyung,Ahn, Hyun-Wook,Yoon, Young-Sik,Cho, Myeong-Woo,Cho, Won-Seung 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.8

AlN-BN ceramic composites were fabricated and their mechanical properties were investigated. The relative density of hot-pressed composites decreased with increasing BN content, but over $99\%$ could be obtained with 30 $vol\%$ BN in AlN. YAG was formed in the composites and monolithic AlN as a second phase by the reaction between $Y_2O_3$, added as sintering aid, and $Al_2O_3$. As expected, Vickers hardness and Young's modulus decreased with increasing BN content. The three-point flexural strength also showed similar behavior decreasing from 500 MPa of monolith down to 250 MPa by the addition 30 $vol\%$ BN. However, interestingly, the standard deviation of the strength values decreased significantly as BN was added to AlN. As a result, the Weibull modulus of the AlN-30 $vol\% BN composite was 21.3, which was extremely high. Fractography and crack path studies revealed that BN platelets induced grain pull-out and crack bridging in a bigger scale during crack propagation. Consequently, fracture toughness increased as more BN was added, reaching 4.5 $MPa\sqrt{m}$ at 40 $vol\%$ BN.

스퍼터 증착된 알루미늄 박막을 이용한 양극산화 알루미늄 나노템플레이트 제조

이재형,Lee, Jae-Hyeong 한국정보통신학회 2010 한국정보통신학회논문지 Vol.14 No.4

양극산화 알루미늄(anodic aluminum oxide, AAO) 나노템플레이트는 제작이 쉬우며, 저비용, 대면적 제작이 가능하다는 장점으로 인해 이를 나노 전자소자 제작에 응용하려는 많은 연구가 이루어지고 있다. 이러한 나노템플레이트를 이용하면 기공의 직경이나 밀도를 변화킴으로써 나노구조의 물질의 크기나 밀도를 제어할 수 있다. 따라서 본 논문에서는 나노 전자소자 제작에 응용할 수 있는 AAO 나노템플레이트를 2단계 양극산화법에 의해 제조하였다. 이를 위해 기존의 알루미늄 판 대신 실리콘 웨이퍼 상에 DC 마그네트론 스퍼터법으로 $2{\mu}m$ 두께의 알루미늄 박막을 증착하였고, 전해액으로 사용한 옥살산 용액의 온도 및 양극산화 전압에 따른 다공성 알루미나 막의 미세구조를 조사하였다. 전해액 온도가 $8^{\circ}C$에서 $20^{\circ}C$로 높아짐에 따라 다공성 알루미나 막의 성장속도는 86.2 nm/min에서 179.5 nm/min으로 증가하였다. 최적 조건에서 제작된 AAO 나노 템플레이트의 기공 직경 및 깊이는 각각 70 nm와 $1\;{\mu}m$이었다. Anodic aluminum oxide (AAO) nanotemplates for nano electronic device applications have been attracting increasing interest because of ease of fabrication, low cost process, and possible fabrication in large area. The size and density of the nanostructured materials can be controlled by changing the pore diameter and the pole density of AAO nanotemplate. In this paper, nano porous alumina films AAO nanotemplate was fabricated by second anodization method using sputterd Al films. In addition, effects of electrolyte temperature and anodization voltate on the microstructure of porous alumina films were investigated. As the electrolyte temperature was increased from $8^{\circ}C$ to $20^{\circ}C$, the growth rate of nanoporous alumina films was increased from 86.2 nm/min to 179.5 nm/min. The AAO nanotemplate fabricated with optimal condition had the mean pore diameter of 70 nm and the pore depth of $1\;{\mu}m$.

CdZnS/CdTe 이종접합의 전기적 특성에 관한 연구

이재형,Lee, Jae-Hyeong 한국정보통신학회 2010 한국정보통신학회논문지 Vol.14 No.7

CdTe 및 Cu(In,Ga)$Se_2$ 박막 태양전지의 창층으로 널리 이용되는 CdS에서 Cd의 일부를 Zn으로 치환하면 두 물질 사이의 전자 친화력의 정합이 향상되고 에너지 밴드 갭이 증가하여 개방전압 및 광전류를 증가시킬 수 있다. 본 연구에서는 태양전지와 같은 광전소자에 적용되는 CdZnS와 CdTe로 구성되는 이종접합 소자를 제작하고 접합에서의 전류 전도기구를 조사하기 위해 온도에 따른 전류-전압 특성을 분석하였다. CdS/CdTe 접합의 전류 흐름은 계면 재결합과 터널링의 조합에 의해 조절되지만 CdZnS/CdTe 접합의 경우 상온 이상의 온도에서는 공핍층에서의 생성/재결합, 상온 이하의 온도에서는 누설 전류나 터널링에 의해 전류 흐름이 제한됨을 알 수 있었다. A CdS film has been used as a window layer in CdTe and Cu(In,Ga)$Se_2$ thin films solar cell. Partial substitution of Zn for Cd increases the photocurrent and the open-circuit voltage by providing a match in the electron affinities of the two materials and the higher band gap. In this paper, CdZnS/CdTe and CdS/CdTe heterojunctions were fabricated and the electrical characteristics were investigated. Current-voltage-temperature measurements showed that the current transport for CdS/CdTe heterojunction was controlled by both tunneling and interface recombination. However, CdZnS/CdTe heterojunction displayed different current transport mechanism with the operating temperature. For above room temperature, the current transport of device was generation/recombination in the depletion region and was the leakage current and/or tunneling in the range below room temperature.

선비의 벗 - 석창포(石菖蒲) 이야기

이재형,Lee, Jae-Hyeong 한국하천협회 2008 하천과 문화 Vol.4 No.2