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자연과학편 : 체력단련(體力鍛鍊)이 심전도시간간격(心電圖時間間隔)에 미치는 효과(效果)
李雄烈(UngRyeolLee),金亨鎭(HyeongJinKim),黃樹寬(SooKwanHwang),朱永恩(YoungEunChoo) 한국체육학회 1983 한국체육학회지 Vol.22 No.1
1回의 運動과 長期間의 運動을 通한體力鍛?이 心電圃時間間隔에 미치는 效果를 究明하고자, 8名의 運動選手群과 14名의 非運動選手群에서 運動前後의 心電圖時間間隔을 測定하여 分析한 結果는 다음과 같다.R-R間隔은 兩群 共히 運動後 10分까지 安靜時에 比해 有意한 (P<0.05)短縮을 보였다.安靜時와 運動後 10分의 P-R間隔은 運動選手群에서 非運動選手群에 比해 有意하게 (p<0.05) 길었다. 運動選手群에서는 運動後 1分에 安靜時에 比해 有意하게 (P<0.05) 短縮되었으나, 非運動選手群에서는 運動後의 P-R間隔이 安靜時와 有意한 差異를 나타내지 않았다.安靜時와 運動後 5分 및 10分의 QRS間隔은 運動選手群에서 非運動選手群에 比해 有意하게 (p<0.05) 짧았다. 運動後의 QRS間隔은 兩群 共히 安靜時에 比해 延長되는 傾向을 보였으나 有意한 差異는 아니었다.安靜時와 運動後의 Q-T間隔은 兩群사이에 有意한 差異가 없었다. 運動選手群에서는 運動後 1分까지, 非運動選手群에서는 運動後 10分까지 安靜時에 比해 有意한(P<0.05) 短縮을 나타내었다.安靜時 및 運動後의 T-P間隔은 兩群사이에 有意한 差異가 없었다. 運動選手群에서는 運動後 5分까지, 非運動選手群에서는 運動後 10分까지 安靜時에 比해 有意한 (P<0.05) 短縮을 보였다.安靜時 또는 運動後에 R-R間隔과 有意한 (P<0.05) 順相關關係를 나타낸 것은 兩群에 있어서 Q-T 및 T-P 間隔이었고, 有意한 (P<0.01) 逆相關關係를 나타낸 것은 非運動選手群에 있어서 QRS間隔이었다. 모든 測定値에 있어서 身長과는 有意한 相關關係가 없었으나, 體重과 有意한 (p<0.05) 順相關關係를 나타낸 것은 非運動選手群에 있어서 安靜時 또는 運動後의 R-R, P-R 및 T-P 間隔이었고, 有意한 (p<0.05) 逆相關關係를 나타낸 것은 非運動選手群에 있어서 安靜時 또는 運動後의 心搏數 및 QRS 間隔이었다. In an effort to elucidate the effect of physical training on the electrocardiographic time intervals, lead II electrocardiograms were recorded before and 1, 5 and 10 minutes after 3-minute exercise in 22 healthy male students aged between 19 and 20 years in two groups of athletes and non-athletes. The R-R, P-R, QRS, and Q-T intervals were measured from the electrocardiograms and the T-P interval was obtained by subtracting the P-R and Q-T from the R-R interval. The intervals measured were compared with values predicted from heart rate by Bazett’s formula.The conclusions derived from the results obtained are as follows:The R-R interval was significantly (p<0.05) shortened through the recovery period compared with the resting value in both groups.The P-R interval at rest and 10 minutes after exercise was significantly (p<0.05) longer in athletes than in non-athletes. In athletes, the P-R interval at 1 minute after exercise was significantly (p<0.05) shortened compared with the resting value, while no significant difference was observed in non-athletes. The QRS interval at rest and 5 and 10 minutes after exercise was significantly (p<0.05) shorter in athletes than in non-athletes.The QRS interval after exercise was lengthened compared with the resting value, but there was no signi ficant difference.The Q-T and T-P intervals before and after exercise showed no significant difference between the two groups. In both groups, they were significantly (p<0.05) shortened after exercise compared with the resting Values.The Q-T and T-P intervals in both groups showed significantly (p<0.05) positive correlations and the QRS interval in non-athletes showed significantly (p<0.01) negative correlation with the R-R interval before and/or after exercise. None of the intervals showed significant correlation with the height, but the R-K, P-R and T-P intervals showed significantly (p<0.05) positive and the QRS interval showed significantly (p<0.05) negative correlations with the body weight in non-athletes.
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이웅렬 ( Ung Youl Lee ),강구현 ( Ku Hyun Kang ),방명성 ( Myung Seong Bang ),남승의 ( Seung Eul Nam ) 한국열처리공학회 2004 熱處理工學會誌 Vol.17 No.4
N/A Conventional spheroidization process of cold heading quality steels requires long heat treatment time, and reduction of the heat treatment time is important for improving productivity in the industry. Recently, hot deformation method has been proposed as a means of increasing spherodization kinetics. In this study, the influences of hot deformation on the spherodization behavior of cold heading quality steels were investigated. Hot deformation at the temperature range of 700℃ significantly enhances the spheroidization kinetics. Hot deformation can lead to a substantial reduction of spherodization process time as low as 1-5 hrs.
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$Si_2H_6$와 $H_2$ 가스를 이용한 LPCVD내에서의 선택적 Si 에피텍시 성장에 미치는 산소의 영향
손용훈,박성계,김상훈,이웅렬,남승의,김형준 한국진공학회 2002 Applied Science and Convergence Technology Vol.11 No.1
Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD. $Si_2H_6$가스를 이용한 LPCVD내에서의 실리콘의 선택적 에피텍시 성장을 $1000^{\circ}C$ 이하의 초청정 분위기하의 저온에서 수행하였다. HCI 첨가없이 초청정 공정으로 인한 양질의 에피텍시 Si층이 균일하게 얻어 졌으며, $SiO_2$위에 증착된 실리콘의 잠복기를 발견할 수 있었다. 단결정위의 에피텍시 층은 산화물 층위 보다 더 두껍게 증착되었다. 산소첨가로 잠복기가 20~30초간 증가하였다. 증착된 박막의 절단면과 표면 형상은 SEM으로 관찰되었으며, XRD를 통해 막질을 평가하였다.
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