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Proximity gettering process for 300-mm silicon wafers
이곤섭,박재근 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.3
The development of an effective proximity gettering process is a key material engineering consideration for advanced semiconductor devices fabricated on 300- mm silicon wafers. Effective intrinsic gettering can be achieved by applying rapid thermal annealing (RTA) in a gas mixture of ammonia and argon at around 1150°C, which produces the desired “M”-shaped depth profile for the oxygen precipitates in the silicon bulk. The depth of the denuded zone is adjustable, and the peak density of the oxygen precipitates is above 1 × 1010 cm−3. The peak density strongly depends on the RTA temperature and the waferís initial interstitial oxygen concentration, so a higher temperature and higher initial interstitial oxygen concentration in the wafer lead to a higher density of oxygen precipitates. The “M”-shaped profile originates from the vacancy profile produced after cooling down from the RTA process. Utilizing the ammonia/argon gas mixture reduces the RTA temperature so as to obtain a higher density of oxygen precipitates and reduces slip in the wafer, as compared to performing RTA under a gas mixture of nitrogen and argon.
이곤섭,심태헌,박재근 한양대학교 세라믹연구소 2004 Journal of Ceramic Processing Research Vol.5 No.3
Utilizing low-temperature epitaxial technology, we have developed a novel MOSFET structure consisting of a nano- scale (< 15nm) strained Silicon (Si) layer grown on a nano-scale SiGe-on-insulator (SiGe-OI) structure. By fabricating n- MOSFETs based on this strained Si/SiGe/SiO2/Si structure, we experimentally studied two effects on the electron mobility in the inversion layer,as compared to MOSFETs based on the conventional silicon on insulator (SOI) structure: the effect of the Ge mole fractionin the SiGe layer, and the effect of the strained Si layer thickness. We observed that the current transport in the strained Silayer was enhanced by a factor of about 1.6 as compared to the unstrained Si in the conventional case. In addition, we foundthat in the case of a strained Si layer with a thickness of less than 15 nm, as the its thickness was reduced, the electron mobilityin the inversion layer decreased.
Jea-gun Park,이곤섭,Kyo-suck Chae,Takahiro Miyata,Yoon-joong Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
An organic bi-stable device (OBD) was developed and exhibited non-volatile memory characteristics with a current conduction bi-stability of 1 × 102 and a threshold voltage of 2.8 V for the writing state. The OBD was fabricated with the following structure: aluminum (Al) layer / conductive organic layer / Al nano-crystals surrounded by amorphous Al2O3 / conductive organic layer / Al layer, where the organic material was 2-amino-4, 5-imidazoledicarbonitrile (AIDCN). The Al nano-crystals surrounded by the amorphous Al2O3 were several nanometers in size, with a density of 1 × 1011/cm2. The OBD could only achieve current conduction bi-stability with an Al evaporation rate of less than 0.3 °A/s.
Yoon Ho Kang,박재근,이곤섭,Su Hwan Lee 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.2
A transparent, conducting, double-layer metal electrode for use in transparent, organic light-emitting devices was fabricated. The electrode consists of thin layers of Al and Au metals of various thicknesses, deposited by using the vacuum thermal evaporation technique. Optical transmittances of 47.2 \%, 60.3 \%, and 57.1 \% were obtained for the R ($\lambda$ = 660 nm), G ($\lambda$ = 525 nm), and B ($\lambda$ = 470 nm) wavelengths, respectively, with a low electrical sheet resistance of $\sim$23 $\Omega/\Box$ for a Au (15 nm) structure. For thicknesses of about 15, 20, 50, and 100 nm, a bottom luminance of $\sim$1000 cd/m$^2$ was observed at 6.3, 6.5, 6.3 and 6.4 V, respectively. Otherwise, for thicknesses of 15, 20, and 50 nm, top luminances of 1620, 1300, and 397 cd/m$^2$, respectively, were observed at 7.5 V. In addition, the threshold voltages of the electrodes were 1.7 V $\sim$ 2.5 V. Inserting 1 nm of Al between the LiF and the Au enhanced the top luminances, and the top luminances decreased 75 \% with increasing Au thickness.
Al:Au 음극층을 이용한 양면발광(dual emission) 유기 EL 소자의 Al 두께별 특성 평가
이수환,김달호,양희두,김지헌,이곤섭,박재근,Lee, Su-Hwan,Kim, Dal-Ho,Yang, Hee-Doo,Kim, Ji-Heon,Lee, Gon-Sub,Park, Jea-Gun 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.1
The Al:Au double-layer metal electrode for use in transparent, dual emission of organic light-emitting diode (OLED) was fabricated. The electrode of Al:Au metals with various thicknesses was deposited by the vacuum thermal evaporation technique. For Al thickness of 1 nm, a bottom luminance of $4880\;cd/m^2$ was observed at 8 V. Otherwise, top luminance of $2020\;cd/m^2$ were observed at 8 V. In addition, the threshold voltages of the electrodes were 2.2 V. It was forward that the inserting 1 nm Al between LiF and Au enhanced electron injection with tunneling effect.
Su Hwan Lee,박재근,Dal Ho Kim,이곤섭,Hee-Doo Yang 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.I
An Au : ultrathin Al layer is investigated as the anode for organic light-emitting devices (OLEDs). However, without surface modification of the Au or Au : ultrathin Al anode, the OLED usually exhibits poor performance. Therefore, to obtain good performance of OLED, we applied an O$_2$ plasma treatment after Al deposition on the Au anode. The O$_2$ plasma treatment of the ultrathin Al layer can greatly enhance the hole injection ability compared with anodes using only Au or Au : ultrathin Al without O$_2$ plasma treatment. The OLED using the Au : O$_2$ plasma pretreated ultrathin Al layer anode demonstrate improved current density and luminance characteristics compared with other anodes, such as Au or Au : ultrathin Al without O$_2$ plasma treatment. The driving voltages of our devices with Au only, Au : Al, and Au : pre-treated Al anode devices are about 18.5 V, 16 V, and 6.6 V, respectively, at a current density of 100 mA/cm$^2$. The voltages to obtain a luminance of 1000 cd/m$^2$ for Au only and Au : pre-treated Al anode devices are needed approximately 18.7 V and 6.5 V, respectively.
이중 음극층을 이용한 고휘도 전면발광(Top emission) 유기EL소자의 특성평가
강윤호,이수환,신동원,김성준,김달호,이곤섭,박재근,Kang, Yoon-Ho,Lee, Su-Hwan,Shin, Dong-Won,Kim, Sung-Jun,Kim, Dal-Ho,Lee, Gon-Sub,Park, Jea-Gun 한국반도체디스플레이기술학회 2006 반도체디스플레이기술학회지 Vol.5 No.3
Recently, Top emission organic light-emitting diode (TEOLED) has been attracted by their potential application for the development of flat panel display (FPD). We have fabricated the high luminance top emission organic-emitting diode (TEOLED) using dual cathode layer and three top emitting structure. These devices were characterized by electroluminescence (EL) and current density-voltage (J-V) measurements. After compared it with Au anode structure, luminance of the device using dual anode was better than using without Al device. Consequently, Al layers are very good candidates for a promising electron-injecting buffer layer for top emission light-emitting diode (TEOLED).
Thin Transparent Single-Crystal Silicon Membranes Made Using a Silicon-on-Nitride Wafer
박재근,이수환,김달호,양희두,김성준,신동원,우성하,이훈주,성현민,이상금,이곤섭 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
We have produced various transparent silicon membrane applications, such as solar cells, microstructures, sensors and displays by using silicon-on-nitride (SON) wafers. We first tried to make them by using silicon-on-insulator (SOI) wafers and a buried layer of SiO2 as an etch-stop layer. However, during the wet-etching process, the buried SiO2 layer did not completely block the potassium hydroxide (KOH) etchant. The silicon membrane eventually formed micro-cracks and the membrane broke along the line of micro-cracks. Because the etching selectivity between Si and SiO2 is only 200 : 1 in 30 % KOH at 80 C, the nanometer-order thickness of SiO2 is insufficient for a suitable etch-stop layer. We have, therefore, developed a wafer that combines a dielectric etchstop layer with a SOI wafer and that makes it possible to produce transparent silicon membranes of various thicknesses.