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Jea-gun Park,이곤섭,Kyo-suck Chae,Takahiro Miyata,Yoon-joong Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
An organic bi-stable device (OBD) was developed and exhibited non-volatile memory characteristics with a current conduction bi-stability of 1 × 102 and a threshold voltage of 2.8 V for the writing state. The OBD was fabricated with the following structure: aluminum (Al) layer / conductive organic layer / Al nano-crystals surrounded by amorphous Al2O3 / conductive organic layer / Al layer, where the organic material was 2-amino-4, 5-imidazoledicarbonitrile (AIDCN). The Al nano-crystals surrounded by the amorphous Al2O3 were several nanometers in size, with a density of 1 × 1011/cm2. The OBD could only achieve current conduction bi-stability with an Al evaporation rate of less than 0.3 °A/s.