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차세대 소자를 위한 MgO thin films의 식각 특성
우종창(Jong-Chang Woo),김관하(Gwan-Ha Kim),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
본 연구는 MgO 박막을 유도 결합 플라즈마를 이용하여, CF₄/Ar 가스 혼합비로 식각하였고, RF 전력, DC-bais 전압과 Process Pressure를 변경하면서 실험하였다. 빛 방출 분석(optical emission spectroscopy, OES)을 이용하여, 플라즈마 진단과 식각 특성과의 관계를 분석하였다. OES 결과로부터 CF₄, 첨가비를 50%까지는 증가시킴에 따라 식각률이 증가하였고, 그 후에 Ar 이온이 감소함으로써 식각률이 감소하였다. MgO 박막의 최고 식각률은 50%의 CF₄/(CF₄+Ar)에서 700W의 RF 전력, -150V의 DC-bias 전압, 반응로 압력은 15 mTorr, 기판 온도는 30℃로 고정시켰을 때 29㎚/min이었다. 이 조건에서 MgO 박막과 SiO₂의 선택비는 0.06 이었다.
BCl₃/Ar 유도 결합 플라즈마를 이용한 ZnO 박막의 식각 특성
禹鍾昌(Jong-Chang Woo),金瓘河(Gwan-Ha Kim),金徑兌(Kyoung-Tae Kim),金宗奎(Jong-Gyu Kim),姜贊民(Chan Min Kang),金昌日(Chang-Il Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.3
The specific electrical, optical and acoustic properties of Zinc Oxide (ZnO) are important for semiconductor process which has many various applications. Piezoelectric ZnO films has been widely used for such as transducers, bulk and surface acoustic-wave resonators, and acousto-optic devices. In this study, we investigated etch characteristics of ZnO thin films in inductively coupled plasma etch system with BCl₃/Ar gas mixture. The etching characteristics of ZnO thin films were investigated in terms of etch rates and selectivities to SiO₂ as a function of BCl₃/Ar gas mixing ratio, RF power, DC bias voltage and process pressure. The maximum ZnO etch rate of 172 ㎚/min was obtained for BCl₃ (80%)/Ar(20%) gas mixture. The chemical states on the etched surface were investigated with X-ray photoelectron spectroscopy (XPS).
CH₄ 플라즈마에 따른 TiN 박막 표면의 식각특성 연구
우종창(Jong-Chang Woo),엄두승(Doo-Seung Um),김관하(Gwan-Ha Kim),김동표(Dong-Pyo Kim),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.5
In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to SiO₂ and HfO₂) of TiN thin films in the CH₄/Ar inductively coupled plasma. The maximum etch rate of 274 A/min for TiN thin films was obtained at CH₄(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CH₄ containing plasmas.
BCl<sub>3</sub>/Ar 유도결합 플라즈마 안에 CH<sub>4</sub> 가스 첨가에 따른 건식 식각된 TaN 박막 표면의 연구
우종창,최창억,양우석,주영희,강필승,전윤수,김창일,Woo, Jong-Chang,Choi, Chang-Auck,Yang, Woo-Seok,Joo, Young-Hee,Kang, Pil-Seung,Chun, Yoon-Soo,Kim, Chang-Il 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.5
In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.
Cl<sub>2</sub>/BCl<sub>3</sub>/Ar 플라즈마에서 반응성 이온들에 의해 식각된 ZnO 박막 표면 연구
우종창,김창일,Woo, Jong-Chang,Kim, Chang-Il 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.10
In the study, the characteristics of the etched Zinc oxide (ZnO) thin films surface, the etch rate of ZnO thin film in $Cl_2/BCl_3/Ar$ plasma was investigated. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2/BCl_3/Ar$=3:16:4 sccm gas mixture. According to the x-ray diffraction (XRD) and atomic force microscopy (AFM), the etched ZnO thin film was investigated to the chemical reaction of the ZnO surface in $Cl_2/BCl_3/Ar$ plasma. The field emission auger electron spectroscopy (FE-AES) analysis showed an elemental analysis from the etched surfaces. According to the etching time, the ZnO thin film of etched was obtained to The AES depth-profile analysis. We used to atomic force microscopy to determine the roughness of the surface. So, the root mean square of ZnO thin film was 17.02 in $Cl_2/BCl_3/Ar$ plasma. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the plasmas.
유도결합플라즈마를 이용한 O<sub>2</sub>/BCl<sub>3</sub>/Ar가스에 따른 Indium Tin Oxide 박막의 식각 특성 연구
위재형,우종창,김창일,Wi, Jae-Hyung,Woo, Jong-Chang,Kim, Chang-Il 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.10
The etching characteristics of indium tin oxide (ITO) thin films in an $O_2/BCl_3/Ar$ plasma were investigated. The etch rate of ITO thin films increased with increasing $O_2$ content from 0 to 2 sccm in $BCl_3$/Ar plasma, whereas that of ITO decreased with increasing $O_2$ content from 2 sccm to 6 sccm in $BCl_3$/Ar plasma. The maximum etch rate of 65.9 nm/m in for the ITO thin films was obtained at 2 sccm $O_2$ addition. The etch conditions were the RF power of 500 W, the bias power of 200 W, the process pressure of 15 mTorr, and the substrate temperature of $40^{\circ}C$. The analysis of x-ray photo electron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species.
$BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가에 따른 TiN 박막의 식각 특성
엄두승,우종창,김동표,김창일,Um, Doo-Seung,Woo, Jong-Chang,Kim, Dong-Pyo,Kim, Chang-Il 한국전기전자재료학회 2008 전기전자재료 Vol.21 No.12
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
O<sub>2</sub>/BCl<sub>3</sub>/Ar 플라즈마를 이용한 HfAlO<sub>3</sub> 박막의 식각특성 연구
하태경,우종창,김창일,Ha, Tae-Kyung,Woo, Jong-Chang,Kim, Chang-Il 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.12
In this study, $HfAlO_3$ thin films using gate insulator of MOSFET were etched in inductively coupled plasma. The etch characteristics of the $HfAlO_3$ thin films has been investigated by varying $O_2/BCl_3$/Ar gas mixing ratio, a RF power, a DC bias voltage and a process pressure. As the $O_2$ concentration increases further, $HfAlO_3$ was redeposited. As increasing RF power and DC bias voltage, etch rates of the $HfAlO_3$ thin films increased. Whereas, as decreasing of the process pressure, etch rates of the $HfAlO_3$ thin films increased. The chemical reaction on the surface of the etched the $HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). These peaks moved a binding energy. This chemical shift indicates that there are chemical reactions between the $HfAlO_3$ thin films and radicals and the resulting etch by-products remain on the surface.
BCl<sub>3</sub>/Ar 플라즈마에 Cl<sub>2</sub> 가스 첨가에 따른 TiN 박막의 식각 특성
엄두승,우종창,김동표,김창일,Um, Doo-Seung,Woo, Jong-Chang,Kim, Dong-Pyo,Kim, Chang-Il 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
BCl<sub>3</sub>/He 유도결합 플라즈마를 이용한 TiN 박막의 식각 특성
주영희,우종창,김창일,Joo, Young-Hee,Woo, Jong-Chang,Kim, Chang-Il 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.9
We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.