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BCl<sub>3</sub>/Ar 플라즈마에 Cl<sub>2</sub> 가스 첨가에 따른 TiN 박막의 식각 특성
엄두승,우종창,김동표,김창일,Um, Doo-Seung,Woo, Jong-Chang,Kim, Dong-Pyo,Kim, Chang-Il 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
CH₄/Ar 유도결합플라즈마를 이용한 ZnO 박막의 식각 특성에 관한 연구
엄두승,허경무,박정수,김동표,김창일 한국표면공학회 2009 한국표면공학회 학술발표회 초록집 Vol.2009 No.-
본 논문에서는 As-doped ZnO 박막의 플라즈마 식각 특성 및 메커니즘에 관하여 실험을 수행하였다. p-type과 n-type ZnO 박막의 식각 실험은 유도 결합 플라즈마 식각 장비(inductively coupled plasma; ICP)를 이용하였고, CH₄/Ar 플라즈마의 가스의 비, RF 전력, DC 바이어스 전압과 공정 압력에 대한 식각 속도의 변화를 관찰 하였다.
$BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가에 따른 TiN 박막의 식각 특성
엄두승,우종창,김동표,김창일,Um, Doo-Seung,Woo, Jong-Chang,Kim, Dong-Pyo,Kim, Chang-Il 한국전기전자재료학회 2008 전기전자재료 Vol.21 No.12
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
엄두승(Doo-Seung Um),강찬민(Chan-Min Kang),양설(Xue Yang),김동표(Dong-Pyo Kim),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.3
This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to SiO₂ with BCl₃/Ar gas mixture. When the gas mixing ratio was BCl₃(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from ?50 V to ?200 V, the etch rate of TiN thin film increased from 15 ㎚/min to 452 ㎚/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was BCl₃(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 ㎚), Cl?(481.9 ㎚) and Cl²?(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in BCl₃/Ar ICP plasma.
유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성 연구
엄두승(Doo-Seung Um),김승한(Seung-Han Kim),우종창(Jong-Chang Woo),김창일(Chang-Il Kim) 한국표면공학회 2009 한국표면공학회지 Vol.42 No.6
In this study, the plasma etching of the TaN thin film with O₂/BCl₃/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to SiO₂ and PR was studied as a function of the process parameters, including the amount of O₂ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was O₂(3 sccm)/BCl3(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.
Metal 게이트 전극을 위한 TiN 박막의 건식 식각 특성
엄두승(Doo-Seung Um),우종창(Jong-Chang Woo),박정수(Jung-Soo Park),김창일(Chang-Il Kim) 한국표면공학회 2009 한국표면공학회지 Vol.42 No.4
We investigated the dry-etching mechanism of the TiN thin film using a Cl₂/Ar inductively coupled plasma system. To understand the effect of the Cl₂/Ar gas mixing ratio, we etched the TiN thin film by varying Cl₂/Ar gas mixing ratio. When the gas mixing ratio was 100% Cl₂, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
양설,엄두승,송상헌,김창일,김관하 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, adaptively coupled plasma (ACP) source was used for dry etching of Al2O3 thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of Al2O3 thin film to mask materials and the etch profile as functions of Cl2/Ar gas ratio and substrate temperature. The highest etch rate of Al2O3 was 65.4 nm/min at 75% of Cl2/ (Cl2+Ar) gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of Al2O3 thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).