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이온 주입과 기판 온도 효과에 의한 Al-1%Si 박막의 Hillock 형성 특성
최창억,이용봉,김정호,Choi, Chang-Auk,Lee, Yong-Bong,Kim, Jeong-Ho 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.1
As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.
BCl<sub>3</sub>/Ar 유도결합 플라즈마 안에 CH<sub>4</sub> 가스 첨가에 따른 건식 식각된 TaN 박막 표면의 연구
우종창,최창억,양우석,주영희,강필승,전윤수,김창일,Woo, Jong-Chang,Choi, Chang-Auck,Yang, Woo-Seok,Joo, Young-Hee,Kang, Pil-Seung,Chun, Yoon-Soo,Kim, Chang-Il 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.5
In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.
Surface Micromachined Pressure Sensor with Internal Substrate Vacuum Cavity
제창한,최창억,이성규,양우석 한국전자통신연구원 2016 ETRI Journal Vol.38 No.4
A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side-wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS-compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit-integrated pressure sensor.
무수 불화수소와 메탄올의 기상식각에 의한 실리콘 표면 미세 가공
장원익,최창억,이창승,홍윤식,이종현,백종태,김보우 한국센서학회 1998 센서학회지 Vol.7 No.1
In silicon surface micro-machining, the newly developed GPE(gas-phase etching) process was verified as a very effective method for the release of highly compliant micro-structures. The developed GPE system with anhydrous HF gas and CH₃OH vapor was characterized and the selective etching properties of sacrificial layers to release silicon micro-structures were discussed. P-doped polysilicon and SOI(silicon on insulator) substrate were used as a structural layer and TEOS(tetraethyorthosilicate) oxide, thermal oxide and LTO(low temperature oxide) as a sacrificial layer. Compared with conventional wet-release, we successfully fabricated micro-structures with virtually no process-induced suction and residual product.
우종창,최창억,김창일 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si toSiO2 in SF6/O2 plasma. The etch rate of the Si film was decreased on adding O2 gas, and the selectivity of Si to SiO2 wasincreased, on adding O2 gas to the SF6 plasma. The optical condition of the Si film with this work was 1,350 nm/min, ata gas mixing ratio of SF6/O2 (=130:30 sccm). At the same time, the etch rate was measured as functions of the variousetching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bondsby ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Fieldemission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption ofthe reaction products.
BCl3/Ar 유도결합 플라즈마 안에 CH4 가스 첨가에 따른 건식 식각된 TaN 박막 표면의 연구
우종창,최창억,양우석,주영희,강필승,전윤수,김창일 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.5
In this study, the plasma etching of the TaN thin film with CH4/BCl3/Ar gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to SiO2 was studied as a function of the process parameters, including the amount of CH4. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film. 본 연구에서는 CH4/BCl3/Ar 플라즈마 안에서 식각된 TaN 박막 표면의 특성을 연구하였다. 이때 CH4/BCl3/Ar=3:4:16 sccm 플라즈마 안에서 TaN 박막의 최고 식각속도는 104.3 nm/min 확인 할 수 있었다. BCl3/Ar(4:16 sccm)의 가스 조건에서 3 sccm의 CH4 가스를 첨가하였을 때 가장 높은 식각속도를 얻었다. 또한, 3 sccm 이상의 CH4 가 첨가될 경우 식각 속도는 줄어들었으나, TaClx와 같은 식각 부산물을 감소시켜 깨끗한 TaN 표면을 얻을 수 있는 것으로 판단된다. TaN 박막을 XPS을 이용하여, CH4/BCl3/Ar 플라즈마 안에서 식각된 TaN 박막 표면의 화학적 반응을 확인하였다. 또한, 식각된 TaN 박막 표면의 반응을 확인하기 위해 FE-SEM을 통해서 확인할 수 있었다.
제창한,최창억,이성규,양우석,Je, C.H.,Choi, C.A.,Lee, S.Q.,Yang, W.S. 한국전자통신연구원 2015 전자통신동향분석 Vol.30 No.6
압력센서란 두 물체 간의 상호 작용하는 힘의 크기를 나타내는 물리적 양을 측정하는 디바이스로서 힘의 전달 크기, 힘의 방향 등을 측정하는 데 매우 광범위하게 사용되고 있는 센서이다. 사용하는 분야는 의료, 자동차, 항공, 공업계측, 가전, 환경제어분야 등의 전반적 산업제품과 산업시설에 응용되고 있으며, 측정원리는 힘의 변화에 따른 재료의 변위, 변형, 진동수, 변화, 열전도율 변화 등을 이용하는 것으로 종전의 기계식 감지방법에서 현재는 센서장치의 소형화를 위하여 반도체소자 제작기술과 Micro Electro Mechanical System(MEMS)기술을 이용하는 초소형, 저전력형 센서개발로 계속 발전하고 있다. 본고에서 멤스(MEMS) 압력센서의 최근 제품 기술 개발과 시장 및 산업동향을 알아보고 향후 더욱더 확장될 압력센서제품 기술의 기초 정보를 제공하고자 한다.
마이크로 공진 구조체 제작을 위한 다층 폴리실리콘의 스트레스 특성
손병기,장원익,최창억,이창승,홍윤식,이종현 한국센서학회 1999 센서학회지 Vol.8 No.1
Micro polysilicon actuators, which are widely used in the field of MEMS (Microelectromechanical System) technology, were fabricated using polysilicon thin layers. Polysilicon deposition were carried out to have symmetrical layer structures with a LPCVD (Low Pressure Chemical Vapor Deposition) system, and we have measured physical characteristics by micro test patterns, such as bridges and cantilevers to verify minimal mechanical stress and stress gradient in the polysilicon layers according to the methods of mutilayer deposition, doping, and thermal treatment, also, analyzed the properties of each specimen, which have a different process condition, by XRD, and SIMS etc.. Finally, the fabricated planar polysilicon resonator, symmetrically stacked to 6.5㎛ thickness, showed Q of 1270 and oscillation ampitude of 5㎛ under DC 15V, AC 0.05V, and 1000 mtorr pressure. The developed micro polysilicon resonator can be utilized to micro gyroscope and accelerometor sensor.
플라즈마 ALD법에 의해 제조된 마이크로볼로미터용 바나듐 산화막의 제작 및 특성
윤형선,정순원,정상현,김광호,최창억,유병곤,Yun, Hyeong-Seon,Jung, Soon-Won,Jeong, Sang-Hyun,Kim, Kwang-Ho,Choi, Chang-Auck,Yu, Byoung-Gon 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.2
The fabrication of vanadium oxide films directly on Si(100) substrates by plasma atomic layer deposition(ALD) with vanadium oxytriisopropoxide(VOIP) and oxygen as the reactants have been performed at temperature ranging from 250 to $450^{\circ}C$. Growth rate of vanadium oxide was $2.8{\AA}$/cycle at $300{\sim}400^{\circ}C$ defined as ALD acceptable temperature window, Vanadium oxide has been shown the different phases at $250^{\circ}C$ and more than $300^{\circ}C$. It has been confirmed that the phase of the films deposited at $250^{\circ}C\;was\;V_2O_5$ type and that of the films above $300^{\circ}C\;was\;VO_2(T)$ type measured at room temperature, respectively. A large change in resistance and small temperature hysteresis corresponding to a temperature has been observed in the vanadium oxide film deposited at temperature $350^{\circ}C$.