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$BCl_3$/Ar 플라즈마에 $Cl_2$ 가스 첨가에 따른 TiN 박막의 식각 특성
엄두승,우종창,김동표,김창일,Um, Doo-Seung,Woo, Jong-Chang,Kim, Dong-Pyo,Kim, Chang-Il 한국전기전자재료학회 2008 전기전자재료 Vol.21 No.12
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
BCl<sub>3</sub>/Ar 플라즈마에 Cl<sub>2</sub> 가스 첨가에 따른 TiN 박막의 식각 특성
엄두승,우종창,김동표,김창일,Um, Doo-Seung,Woo, Jong-Chang,Kim, Dong-Pyo,Kim, Chang-Il 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
In this study, the investigations of the TiN etching characteristics were carried out with addition of $Cl_2$ gas in an inductively coupled $BCl_3$-base plasma system. Dry etching of the TiN was studied by varying the etching parameters including $Cl_2$ gas addition ratio, RF power, DC-bias voltage and pressure. The etch rate of TiN thin film was maximum when the $Cl_2$ gas addition flow was 2 sccm with fixed other conditions. As the RF power DC-bias voltage were increased, the etch rate of TiN thin film showed increasing tendency. $BCl_3/Cl_2$/Ar plasmas were characterized by optical emission spectroscopy (OES) analysis. The chemical reaction on the surface of the etched TiN films was investigated with X-ray photoelectron spectroscopy (XPS).
Metal 게이트 전극을 위한 TiN 박막의 건식 식각 특성
엄두승(Doo-Seung Um),우종창(Jong-Chang Woo),박정수(Jung-Soo Park),김창일(Chang-Il Kim) 한국표면공학회 2009 한국표면공학회지 Vol.42 No.4
We investigated the dry-etching mechanism of the TiN thin film using a Cl₂/Ar inductively coupled plasma system. To understand the effect of the Cl₂/Ar gas mixing ratio, we etched the TiN thin film by varying Cl₂/Ar gas mixing ratio. When the gas mixing ratio was 100% Cl₂, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성 연구
엄두승(Doo-Seung Um),김승한(Seung-Han Kim),우종창(Jong-Chang Woo),김창일(Chang-Il Kim) 한국표면공학회 2009 한국표면공학회지 Vol.42 No.6
In this study, the plasma etching of the TaN thin film with O₂/BCl₃/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to SiO₂ and PR was studied as a function of the process parameters, including the amount of O₂ added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was O₂(3 sccm)/BCl3(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.
엄두승(Doo-Seung Um),강찬민(Chan-Min Kang),양설(Xue Yang),김동표(Dong-Pyo Kim),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.3
This study described the effects of RF power, DC bias voltage, chamber pressure and gas mixing ratio on the etch rates of TiN thin film and selectivity of TiN thin film to SiO₂ with BCl₃/Ar gas mixture. When the gas mixing ratio was BCl₃(20%)/Ar(80%) with other conditions were fixed, the maximum etch rate of TiN thin film was 170.6 nm/min. When the DC bias voltage increased from ?50 V to ?200 V, the etch rate of TiN thin film increased from 15 ㎚/min to 452 ㎚/min. As the RF power increased and chamber pressure decreased, the etch rate of TiN thin film showed an increasing tendency. When the gas mixing ratio was BCl₃(20%)/Ar(80%) under others conditions were fixed, the intensity of optical emission spectra from radical or ion such as Ar(750.4 ㎚), Cl?(481.9 ㎚) and Cl²?(460.8 nm) was highest. The TiN thin film was effectively removed by the chemically assisted physical etching in BCl₃/Ar ICP plasma.
Cl<sub>2</sub>/Ar 플라즈마를 이용한 Al<sub>2</sub>O<sub>3</sub> 박막의 식각
양설,엄두승,김관하,송상헌,김창일,Yang, Xue,Um, Doo-Seung,Kim, Gwan-Ha,Song, Sang-Hun,Kim, Chang-Il 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).
BCl₃/Cl₂/Ar 플라즈마에서의 Na<SUB>0.5</SUB>K<SUB>0.5</SUB>NbO₃ 박막의 표면반응
김동표(Dong-Pyo Kim),엄두승(Doo-Seung Um),김관하(Gwan-Ha Kim),우종창(Jong-Chang Woo),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.6
The etch of (Na0.5K0.5)NbO₃ (NKN) thin film was performed in BCl₃/Cl₂/Ar inductively coupled plasma. It was found that the 1sccm addition BCl3 (5%) into Cl2/Ar plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 ㎚/min at BCl₃ (1 sccm)/Cl₂ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra o f XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.
CH₄ 플라즈마에 따른 TiN 박막 표면의 식각특성 연구
우종창(Jong-Chang Woo),엄두승(Doo-Seung Um),김관하(Gwan-Ha Kim),김동표(Dong-Pyo Kim),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.5
In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to SiO₂ and HfO₂) of TiN thin films in the CH₄/Ar inductively coupled plasma. The maximum etch rate of 274 A/min for TiN thin films was obtained at CH₄(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CH₄ containing plasmas.
기판 온도에 따른 Cl₂/BCl₃/Ar 플라즈마에서 ZrO₂ 박막의 건식 식각
양설(Xue Yang),하태경(Tae-Kyung Ha),위재형(Jae-Hyung Wi),엄두승(Doo-Seung Um),김창일(Chang-Il Kim) 한국표면공학회 2009 한국표면공학회지 Vol.42 No.6
The wafer surface temperature is an important parameter in the etching process which influences the reaction probabilities of incident species, the vapor pressure of etch products, and the re-deposition of reaction products on feature surfaces. In this study, we investigated all of the effects of substrate temperature on the etch rate of ZrO₂ thin film and selectivity of ZrO₂ thin film over SiO₂ thin film in inductively coupled plasma as functions of Cl₂ addition in BCl₃/Ar plasma, RF power and dc-bias voltage based on the substrate temperature in range of 10℃ to 80℃. The elements on the surface were analyzed by x-ray photoelectron spectroscopy (XPS).