특수 직업인에게는 정기적으로 마약 검사 실시해야

우종창 사회발전연구소 1991 한국인 Vol.10 No.1

The Dry Etching Properties of TaN Thin Film Using Inductively Coupled Plasma

우종창,김창일,Young-Hee Joo 한국전기전자재료학회 2012 Transactions on Electrical and Electronic Material Vol.13 No.6

We investigated the etching characteristics of TaN thin films in an O2/BCl3/Cl2/Ar gas using a high density plasma (HDP) system. A maximum etch rate of the TaN thin films and the selectivity of TaN to SiO2 were obtained as 172.7nm/min and 6.27 in the O2/BCl3/Cl2/Ar (3:2:18:10 sccm) gas mixture, respectively. At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. The chemical states on the surface of the etched TaN thin films were investigated using X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched TaN thin films. These surface analyses confirm that the surface of the etched TaN thin film is formed with the nonvolatile by-product.

The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

우종창,최창억,김창일 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.1

In this study, we carried out an investigation of the etch characteristics of silicon (Si) film, and the selectivity of Si toSiO2 in SF6/O2 plasma. The etch rate of the Si film was decreased on adding O2 gas, and the selectivity of Si to SiO2 wasincreased, on adding O2 gas to the SF6 plasma. The optical condition of the Si film with this work was 1,350 nm/min, ata gas mixing ratio of SF6/O2 (=130:30 sccm). At the same time, the etch rate was measured as functions of the variousetching parameters. The X-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bondsby ion bombardment, as well as the accumulation of high volatile reaction products on the etched surface. Fieldemission auger electron spectroscopy analysis was used to examine the efficiency of the ion-stimulated desorption ofthe reaction products.

He/BCl₃/Cl₂유도결합 플라즈마를 이용한 TiN 박막의 식각 특성

우종창,김창일,주영희,박정수 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9

In this work, we investigated to the etching characteristics of the TiN thin film in He/BCl₃/Cl₂plasma. The etch rate was measured by the gas mixing ratio, the RF power, the DC bias voltage and the process pressure. The maximum etch rate in He/BCl₃/Cl₂l2 plasma was 59 nm/min. The etch rate increased as the RF power and the DC-bias voltage was increased. The chemical reaction on the surface of the etched the TiN thin films was investigated with X-ray photoelectron spectroscopy (XPS). The intensity of Ti 2p and N 1s peaks are varied during etching process. A new peak was appeared in He/BCl₃/Cl₂plasma. The new peak was revealed Ti-Cl_x by Cl 2p peak of XPS wild scan spectra analysis. 본 연구에서는 He/Cl₂/BCl₃ 플라즈마 안에서 식각된 TiN 박막의 식각 특성을 연구하였다. 식각속도는 가스비, RF 전력, 직류 바이어스 전압, 그리고 공정압력 안에서 측정되었다. 이때 He/Cl₂/BCl₃ 플라즈마 안에서 TiN 박막의 최고 식각속도는 59 nm/min로 확인할 수 있었다. 또한, RF 전력과 직류 바이어스 전압이 증가 할 때마다 식각속도도 역시 증가되는 것을 알 수 있었다. 식각된 TiN 박막의 표면 위의 화학적 반응은 X-ray photoelectron spectroscopy (XPS)를 통해 연구하였다. Ti 2p와 N 1s의 Intensity는 식각 공정을 하는 동안 다양하게 확인할 수 있었다. He/Cl₂/BCl₃/Ar 플라즈마 안에서 식각된 TiN 박막 표면에서 새로운 Peak이 나타나는 것을 확인하였다. 결과적으로 보면, XPS 분석을 통한 Cl 2p에 의해 새로운 Peak은 Ti-ClX 의 결합으로 확인되어지는 것을 알 수 있었다.

Cl₂/BCl₃/Ar 플라즈마에 의해 식각된 ZnO 박막 표면의 연구

우종창,하태경,위재형,주영희,엄두승,김동표,김창일 한국표면공학회 2009 한국표면공학회 학술발표회 초록집 Vol.2009 No.-

본 연구에서 유도결합 플라즈마 식각 장치와 BCl₃/Ar/Cl₂ 가스 혼합비를 이용하여 ZnO 박막을 식각 하였을 때, 식각 된 ZnO 박막의 표면 반응에 관하여 관찰하였다. ZnO 박막의 식각 실험 조건은 RF 전력 700 W, 직류바이어스 전압 - 150 V, 공정 압력 15 mTorr로 고정하였고, Cl₂/(Cl₂+BCl₃+Ar) 가스 혼합비를 변경하면서 식각 실험을 수행하였다. Cl₂ 가스가 3 sccm 일 때, ZnO 박막의 식각속도는 53 ㎚/min으로 가장 높았으며, 이때 ZnO 박막에 대한 SiO₂의 선택비는 0.89 이었다. 식각된 ZnO 박막의 표면은 XRD (X-ray diffraction)와 AFM(atomic force microscopy)를 이용하여 결정상의 변화와 표면의 거칠기를 분석하였다. AFM 분석 결과에서 Ar, BCl₃와 Cl₂ 플라즈마를 이용하여 식각된 시료의 표면 거칠기 rms 값이 식각전의 시료나 BCl₃/Ar/Cl₂ 플라즈마로 식각된 시료보다 큰 것을 확인하였다. 이는 식각된 시료에서의 Zn 양의 감소나 비휘발성 식각 잔류물에 의한 영향으로 판단된다. SIMS(secondary ion mass spectrometery) 분석을 통해 검증 하였다.

플라즈마 표면 처리에 따른 AZO 박막의 특성 변화

우종창,김관하 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.2

There is a need for the development of transparent conductive materials that are economical and environmentallyfriendly with exhibit low resistivity and high transmittance in the visible spectrum. In this study, the deposition rate anduniformity of Al-doped ZnO-thin films were improved by changing the Z-motion of the sputtering system. The depositionrate and the uniformity were determined to be 3.44 nm/min and 1.23%, respectively, under the 10 mm Z-motion condition. During O2 plasma treatment, the intrusion-type metal elements in the thin film were reduced, which contributed to anoxygen vacancy reduction in addition to structural stabilization. Moreover, the sheet resistance was more easily saturated. 투명 전도성 산화물 전극은 디스플레이, 태양전지, 광전자 소자 등 다양한 분야에서 폭넓게 사용되고 있으나, ITO의 원료 물질의 희소성, 독성, 저온 증착 어려움 등으로 인하여 친환경적이고 경제적이며 비저항이 작고 가시광선 영역에서 높은 투과율을 갖는 도전성 재료를 개발할 필요가 있다. 본 연구에서는 스퍼터링 시스템의 Z-motion을 변화시킴으로써 AZO 박막의 증착율과 균일성을 개선시킬 수 있었으며 O2 플라즈마 표면 처리를 통하여 경시 변화 특성을 억제 시킬 수 있었다. Z-motin 10mm 조건에서 증착 속도는 3.44nm/min이고 균일도는 1.23 %임을 확인하였다. O2 플라즈마 처리에서 박막의 침입 형 금속 원소가 감소되어 산소 결손 감소 및 박막의 구조적 안정화에 기여하기 때문으로 사료된다.

Dry Etching Characteristics of TiN Thin Films in BCl_(3-) Based Plasma

우종창,Jung-Soo Park,김창일 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.3

We investigated the etching characteristics of titanium nitride (TiN) thin film in BCl3/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DCbias voltage = -100 V, substrate temperature = 40℃, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to Al_2O_3 thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma

우종창,최창욱,주영희,김한수,김창일 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.2

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure),and then monitored the effect on TiN etch rate and selectivity with SiO2. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing CF4 content from 0 to 20 % in CF4/Ar plasma. The TiN etch rate reached maximum at 20% CF4 addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in CF4/Ar plasma.

The Dry Etching Properties on TiN Thin Film Using an N_2/BCl_3/Ar Inductively Coupled Plasma

우종창,주영희,Jung-Soo Park,김창일 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.4

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a N_2/BCl_3/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = 40℃, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the SiO2 thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results,the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

Catalytic Growth and Properties of Carbon Nanotubes from Fe-Mo/MgO by Chemical Vapor Deposition

우종창,Kyoung-Tae Kim,Gwan-Ha Kim,Jong-Sik Kim,Jong-Gyu Kim,김창일 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.5

Carbon nanotubes (CNTs) are largely synthesized on Fe catalysts by catalytic chemical vapor deposition. The various shapes and compositions of these nanostructure CNTs were obtained by controlled parameters such as the reaction temperature, gas-mixing ratio. The influence of these parameters is investigated, together with observations of the produced materials after the purification processes. A diameter of CNTs, range from 2 to 10 nm, closely correlated with the size of the catalyst particle found attached to the tube end. The yield of CNTs was estimated to be 88.5 % and the purities of CNTs thus obtained were more than 80 %. The experimental results were documented with field emission scanning electron microscopy and raman spectroscopy and transmission electron microscopy, both before and after the purification.