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BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막의 식각
金瓘河(Gwan-Ha Kim),金徑兌(Kyoung-Tae Kim),金宗奎(Jong-Gyu Kim),禹鍾昌(Jong-Chang Woo),姜贊民(Chan Min Kang),金昌日(Chang-Il Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.2
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ thin film is 85.5 ㎚/min at a BCl₃/(BCl₃+Ar) of 20 % and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O₂ addition of 2 seem into the BCl₃/(BCl₃+Ar) of 20 % plasma.
사중극자 질량 분석기를 이용한 BCl₃/Ar 유도결합 플라즈마 특성 진단
金瓘河(Gwan-Ha Kim),金昌日(Chang-Il Kim) 대한전기학회 2006 전기학회논문지C Vol.55 No.4
In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as BCl₃/Ar gas mixing ratio, RF power, and process pressure. As the BCl₃/Ar gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between BCl₃ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.
BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막 식각
김관하(Gwan-Ha Kim),김경태(Kyoung-Tae Kim),김종규(Jong-Kyu Kim),우종창(Jong-Chang Woo),강찬민(Chan Min Kang),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma (ICP) system. The ion energy distribution functions in an inductively coupled plasma was analyzed by Quadrupole mass spectrometer with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ is 85.5 ㎚/min at a BCl₃(BCl₃+Ar) of 20% and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions (IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O2 addition of 2 sccm into the BCl₃/(BCl₃+Ar) of 20% plasma.
고밀도 플라즈마를 이용한 contact hole 식각에서 공정 변수에 따른 식각 특성
김관하(Gwan-Ha Kim),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
본 연구에서는 고밀도 플라즈마 식각 시스템을 이용하여 contact hole 식각을 연구하였다. 실험은 공정 변수에 따른 식각 특생을 변화를 SEM 분석을 이용하여 보였으며 공정 압력 증가에 따른 contact hole 패턴의 하부 및 측면이 vertical 하지 못한 현상을 볼 수 있었으며 이는 과도한 라디컬 생성으로 인하여 식각 반응 부산물과 폴리머가 식각 패턴 밖으로 탈착되지 못하여 나타나는 것으로 생각되며 하부 bias 전력을 증가시킴으로써 식각 반응 부산물과 폴리머의 탈착을 도와 식각 프로파일 개선에 영향을 줌을 확인하였다. 또한, 본 장비의 낮은 전자용도 등의 특성으로 인하여 PR의 degradation 현상 등이 나타나지 않았다.
Dielectric properties of PST (20/80)/ PST(80/20) heterolayered thin films
김경태(Kyoung-Tae Kim),김관하(Gwan-Ha Kim),우종창(Jong-Changb Woo),김종규(Jong-Gyu Kim),강찬민(Chan-Min Kang),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the Pt/Ti/SiO₂/Si substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 ㎑ were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.
Cl<sub>2</sub>/Ar 플라즈마를 이용한 Al<sub>2</sub>O<sub>3</sub> 박막의 식각
양설,엄두승,김관하,송상헌,김창일,Yang, Xue,Um, Doo-Seung,Kim, Gwan-Ha,Song, Sang-Hun,Kim, Chang-Il 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).