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사중극자 질량 분석기를 이용한 BCl3/Ar 유도결합 플라즈마 특성 진단
김관하,김창일 대한전기학회 2006 전기학회논문지C Vol.55 No.4(C)
- In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as BCl3/Ar gas mixing ratio, RF power, and process pressure. As the BCl3/Ar gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between BCl3 and Ar, change of plasma potential, alteration of mean free path, and variety of ion collision in the sheath.
김관하,김경태,김동표,김창일 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.4
(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.
김관하 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.2
In this study, the characterizations of oxide contact hole etching are investigated with C4F8/O2/Ar and CH2F2/C4F8/O2/Ar plasma. As the percent composition of C4F8 in a C4F8/O2/Ar mixture increases, the amount of polymer deposited onthe etched surface also increases because the CxFy polymer layer retards the reaction of oxygen atoms with PR. AddingCH2F2 into the C4F8/O2/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profileof contact holes was close to 90o, and no visible residue was seen in the SEM image at a C4F8/(C4F8+O2) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and thechemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.
Etching Properties of ZnS:Mn Thin Films in an Inductively Coupled Plasma
김관하,우종창,김경태,김동표,김창일 한국전기전자재료학회 2008 Transactions on Electrical and Electronic Material Vol.9 No.1
ZnS is an attractive material for future optical and electrical devices since it has a direct and wide band gap to provide blue emission at room temperature. In this study, inductively coupled BCl3/Ar plasma was used to etch ZnS:Mn thin films. The maximum etch rate of 164.2 nm/min for ZnS:Mn was obtained at a BCl₃(20)/Ar(80) gas mixing ratio, an rf power of 700 W, a dc bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. The etch behaviors of ZnS:Mn thin films under various plasma parameters showed that the ZnS:Mn were effectively removed by the chemically assisted physical etching mechanism. The surface reaction of the ZnS:Mn thin films was investigated by X-ray photoelectron spectroscopy. The XPS analysis revealed that Mn had detected on the surface ZnS:Mn etched in BCl₃/Ar plasma.
BCl₃/Ar 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 HfO₂ 박막의 식각
金瓘河(Gwan-Ha Kim),金徑兌(Kyoung-Tae Kim),金宗奎(Jong-Gyu Kim),禹鍾昌(Jong-Chang Woo),姜贊民(Chan Min Kang),金昌日(Chang-Il Kim) 대한전기학회 2007 전기학회논문지 Vol.56 No.2
In this work, we investigated etching characteristics of HfO₂ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of HfO₂ thin film is 85.5 ㎚/min at a BCl₃/(BCl₃+Ar) of 20 % and decreased with further addition of BCl₃ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDs) showed a maximum at 20 % of BCl₃. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of HfO₂ over Si is 3.05 at a O₂ addition of 2 seem into the BCl₃/(BCl₃+Ar) of 20 % plasma.
고밀도 플라즈마를 이용한 contact hole 식각에서 공정 변수에 따른 식각 특성
김관하(Gwan-Ha Kim),김창일(Chang-Il Kim) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
본 연구에서는 고밀도 플라즈마 식각 시스템을 이용하여 contact hole 식각을 연구하였다. 실험은 공정 변수에 따른 식각 특생을 변화를 SEM 분석을 이용하여 보였으며 공정 압력 증가에 따른 contact hole 패턴의 하부 및 측면이 vertical 하지 못한 현상을 볼 수 있었으며 이는 과도한 라디컬 생성으로 인하여 식각 반응 부산물과 폴리머가 식각 패턴 밖으로 탈착되지 못하여 나타나는 것으로 생각되며 하부 bias 전력을 증가시킴으로써 식각 반응 부산물과 폴리머의 탈착을 도와 식각 프로파일 개선에 영향을 줌을 확인하였다. 또한, 본 장비의 낮은 전자용도 등의 특성으로 인하여 PR의 degradation 현상 등이 나타나지 않았다.
사중극자 질량 분석기를 이용한 BCl₃/Ar 유도결합 플라즈마 특성 진단
金瓘河(Gwan-Ha Kim),金昌日(Chang-Il Kim) 대한전기학회 2006 전기학회논문지C Vol.55 No.4
In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as BCl₃/Ar gas mixing ratio, RF power, and process pressure. As the BCl₃/Ar gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between BCl₃ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.