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문병연,황기주,이윤정,유동식 한국안광학회 2010 한국안광학회지 Vol.15 No.1
Purpose: We investigated the changes of plastic lens after etching of coating films by comparing uncoated lens. Methods: CR-39, middle index and high index lenses of 0 (zero) diopter were etched at 80oC and room temperature using a coating remover, and then changes of refractive power, transmittance and surface morphology were investigated. Results: There were no differences in refractive power and transmittance between uncoated and etched lenses. The etching rate was similar in both CR-39 and middle index lens, but in the case of high index lens, it was slower and less steady than the others. From the SEM observation of lens surface, etching damage was found out on the surface of etched lens. It was shown the least damage in middle index lens but the most damage in high index lens. Conclusions: If the etching of coating films is demanded on condition that the surface of ophthalmic lenses are not damaged, a using of most adequate coating remover based on lens material should be considered, and a caution for proper etching conditions is required. 목적: 플라스틱렌즈 표면의 코팅막을 식각한 렌즈와 무코팅렌즈를 비교함으로써, 코팅의 식각이 렌즈에 미치는 변 화를 연구하였다. 방법: 굴절력이 0 디옵터인 CR-39, 중굴절률, 고굴절률렌즈를 코팅제거제를 사용하여 80oC와 상 온에서 식각하였고, 굴절력, 투과율 및 렌즈 표면의 변화를 조사하였다. 결과: 코팅의 식각으로 렌즈의 굴절력의 변 화는 없었으며, 무코팅렌즈와 식각된 렌즈의 광투과율도 거의 차이가 없었다. 식각속도는 CR-39와 중굴절률렌즈에 서 비슷하였으나 고굴절률렌즈에서는 느리고, 불규칙하였다. 렌즈 미세 표면을 관찰한 결과 렌즈 표면에 식각으로 인한 손상이 나타났는데, 중굴절률렌즈의 손상이 가장 적었고, 고굴절률렌즈에서 가장 많았다. 결론: 안경렌즈 표면 이 손상되지 않도록 코팅막을 식각하려면, 렌즈 소재에 맞는 적합한 코팅제거제가 사용되어야 하며, 적절한 식각조 건에 대한 주의가 필요할 것이다.
수소 유량에 따라 증착된 n형 μc-Si(:Cl)박막의 특성
문병연 경운대학교 산업기술연구소 2001 産業技術硏究論文誌 Vol.3 No.2(B)
The n-type μc-Si(:Cl) film deposited at a hydrogen flow rate of 0.5 sccm, showed crystalline volume fraction of 71 % and FWHM of 13.9 ㎝^-1, dark conductivity of 4S/㎝ and conductivity activation energy of 21 meV. The electrical properties of the n-type μc-Si(:Cl) film are related to their structural properties, and the properties of the n-type μc-Si(:Cl) film are influenced by hydrogen dilution. In the growth of the n-type μc-Si(:Cl) films, the effect of Cl radical decreases with increasing of H radical. Film property seems to degrade with increasing hydrogen dilution because of the formation of HCl.
SiH_2Cl_2/SiH_4 혼합가스를 사용하여 유도결합형 플라즈마 증착법으로 제작된 다결정 실리콘 박막의 제조 연구
문병연,손정식 경운대학교 산업기술연구소 2000 産業技術硏究論文誌 Vol.3 No.1(A)
Polycrystalline silicon thin film have been deposited by an inductively coupled plasma chemical vapor deposition using SiH₂Cl₂/SiH₄/H₂ mixtures. The ICP source offers some advantages which include high electron density, simple design, good uniformity and lower ion bombardment on the growing surface. The poly-Si quality and deposition rate can be improved significantly by adding SiH₂Cl₂ into SiH₄ plasma. But an optimum flow rate ratio of SiH₂Cl₂to SiH₄seems to be ∼1. The Cl radicals appear to enhance the etching effect and promote the growth of crystalline phase. When both SiH₂Cl₂ and SiH₄ were used as the source gas, the deposition rate had a maximum value of 7.2 A˚/sec. The poly-Si film exhibited the volume fraction from Raman scattering of 87% and the SEM average grain size of ∼3000 A˚
문병연 경운대학교 산업기술연구소 2001 産業技術硏究論文誌 Vol.3 No.2(A)
In now a days, the concern to environment and energy saving is increased worldly. Our country is very poor for natural resources as well as fossil fuels and almost all energy resources depended on abroad. From the viewpoint of energy security, the further research concerning the alternative energy resource is urgently required. Solar radiation, because of inexhaustibility and cleanliness, is an ideal energy and has been recognized as one of the most promising new energy resources. This paper describes the current state of the art with respect to polycrystalline silicon(poly-Si) solar cells.
이온 샤우어 도핑을 이용한 자기정렬방식의 APCVD 비정질 실리콘 박막 트랜지스터의 제작
문병연,이경하,정유찬,유재호,이승민,장진,Moon, Byeong-Yeon,Lee, Kyung-Ha,Jung, You-Chan,Yoo, Jae-Ho,Lee, Seung-Min,Jang, Jin 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.1
We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.
SiH₄/He 혼합가스를 사용하여 제작된 다결정 실리콘 박막의 특성 연구
문병연,곽호원 경운대학교 산업기술연구소 2002 産業技術硏究論文誌 Vol.5 No.1(A)
We studied the deposition of poly-Si using Si using SiH₄/He mixtures by inductively coupled plasma chemical vapor deposition. Volume fraction, grain size and deposition rate of poly-Si decreased by adding He into SiH₄ plasma. The decrease of crystallinity and deposition rate are due to ion bombardment. when we used SiH₄ as the source gas, the deposition rate was 7.44 A˚/sec. The poly-Si film exhibited the volume fraction from Raman scattering of 83.6% and FWHM of 8.89 cm^1
문병연,유동식,조현국 대한시과학회 2008 대한시과학회지 Vol.10 No.2
목적: 본 연구에서는 국산 시력보정용 안경렌즈의 품질을 비교, 평가하고자 하였다. 방법: 국내에서 유통되고 있는 원시성 난시 교정용 토릭렌즈들의 굴절력과 중심부 두께를 측정, 비교하였다. 결과: 국산 제품들이 외국산 브랜드 제품들에 비해 큰 질적 차이는 없었으나, 오차가 조금 더 큰 편이었으며, 허용기준을 초과하는 경우가 있었다. 결론: 좀 더 정밀한 품질관리와 엄격한 공정관리를 통해 제조오차를 최소화함으로써, 국내 렌즈제조업체들이 해외시장에서 경쟁력을 강화할 수 있을 것이다. Purpose: To make a comparative evaluation of the quality of Korean ophthalmic lenses. Methods: We have measured and compared the refractive powers and the thickness at optical center of toric lenses for hyperopic astigmatism which were distributed in Korea. Results: The qualities of the Korean products were similar to famous foreign brand products. But the error of Korean products had slightly larger than foreign brand ones and they were out of tolerance in a few cases. Conclusion: By reducing the processing errors based on the precision quality control and hard process control, the Korean lens manufacturing industries will be strengthen the competitiveness in the world marketplace.
Crystallization of amorphous silicon films via electron beam exposure
문병연,강정수,박선용,박규창 한국정보디스플레이학회 2015 Journal of information display Vol.16 No.3
An electron-beam-induced crystallization technique for amorphous silicon (a-Si:H) thin films was investigated. The high-energy electron beams (e-beams) transfer their energy to the silicon network, resulting in network relaxation and crystallization. The crystalline properties of the silicon film strongly rely on the e-beam exposure time and the acceleration voltage. The crystallinity of the silicon film depends on the a-Si:H growth method used. Silicon films with higher crystallinity can be obtained from thin films deposited via plasma-enhanced chemical vapor deposition (PECVD) rather than from thin films deposited via sputtering. The PECVD silicon thin film showed more than 94% crystallinity and a ∼50 nm grain size after e-beam exposure with 1500 V acceleration bias for 180 s.