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삼각 측량 및 핑거프린트 방식을 이용한 의료 기기의 실시간 실내 측위 시스템 구현
남효진 ( Hyo-jin Nam ),김주현 ( Ju Hyun Kim ),김현아 ( Hyun Ah Kim ),송현지 ( Hyun Ji Song ),백세인 ( Se In Baek ),송양의 ( Yang-eui Song ),이용규 ( Yong Kyu Lee ) 한국정보처리학회 2017 한국정보처리학회 학술대회논문집 Vol.24 No.2
의료 기기 관리의 중요성에 따라 의료 기기의 실시간 실내 측위의 필요성이 대두되고 있다. 본 논문에서는 의료 기기에 Wi-Fi 태그를 부착하여 삼각 측량과 핑거프린트 방식을 이용한 의료 기기의 실시간 실내 측위 시스템을 구현하고자 한다. 중앙 제어 모듈과 의료 기기에 부착한 Wi-Fi 태그와의 통신을 통하여, 의료 기기의 위치 정보를 관리하는 데이터베이스를 실시간으로 파악함으로써 의료 기기의 정확한 위치 확인이 가능하다. 본 시스템을 통해 의료 기기에 부착한 Wi-Fi 태그의 실시간 위치 파악 및 정보관리가 가능하여 의료 기기의 관리가 용이할 것으로 기대한다.
MOST 네트워크를 이용한 멀티미디어 스트리밍 시스템 구현
남효진(Hyo-Jin Nam),구옌 트롱 푹(Trong-Phuc Nguyen),조용범(Yong-Beom Cho) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
MOST ?.Media Oriented Systems Transport ?. is the synchronous bit stream standard for multimedia and infotainment networking in the automotive industry. To provide a flexible platform for MOST device development and interface with other automotive protocols, we present a design of MOST device system on which many interfaces can be supported. In this paper, we will present a HW/SW MOST system. An FPGA design was added to interface between the Networking Interface Controller (NIC) and the Central Processing Unit (CPU) mpc5200B. Embedded Linux 2.6 version was ported on cpu to provide application interface. FPGA device driver was also made for the CPU-side applications to communicate with the FPGA through LocalPlus Bus.
2단계 증착법으로 제조된 Pb(Zr,Ti)$\textrm{O}_3$ 박막의 특성
남효진,노광수,이원종,Nam, Hyo-Jin,No, Gwang-Su,Lee, Won-Jong 한국재료학회 1998 한국재료학회지 Vol.8 No.12
금속 타겟들을 이용한 반응성 스퍼터링법으로 $460~540^{\circ}C$범위에서 $Pt/Ti/SiO_2$/Si 기판위에 PZT 박막을 증착하였다. Perovskite상의 핵형성을 위해 Pb 휘발이 적은 저온($480^{\circ}C$)에서 짧은 시간 동안 PZT 박막을 증착한 후 Pb가 PBT 박막내에 과잉으로 함유되는 것을 억제하기 위하여 증착 온도를 증가시켜 박막을 증착하는 2단계 증착법을 사용한 결과 54$0^{\circ}C$의 고온에서도 perovskite 단일상과 화학양론비에 가까운 조성을 얻을 수 있었다. 2단계 증착법으로 제조된 PZT 박막은 우수한 전기적 특성을 나타내었으며 후속 RTA 처리로 더욱 특성을 향상시킬 수 있었는데 $17\mu$C/$\textrm{cm}^2$의 잔류분극, 45kv/cm의 coercive field, 그러고 -500kv/cm의 높은 전기장에서도 $10^{-4}$ A/$\textrm{cm}^2$의 양호한 누설전류 특성을 나타내었다. The PZT films were deposited on the Pt/Ti/$SiO_2$/Si substrates using multi- target DC magnetron reactive sputtering. The perovskite single phase with the composition close to the stoichiometric one, was obtained even at high substrate temperature of $540^{\circ}C$ by 2-step method, which is that PZT film was deposited for a short time at low substrate temperature ($480^{\circ}C$) to promote the nucleation of perovskite phase by reducing the volatility of Pb oxide molecules, followed by the deposition at the elevated temperature to suppress the excess incorporation of Pb component in the PZT film. This two-step method, in combination with the RTA treatment, gives rise to good electrical properties of the deposited PZT films: remanent polarifaion,$18\mu$C/$\textrm{cm}^2$; coercive field, 45kV/cm; leakage current of 10$^{-4}$ A/$\textrm{cm}^2$ at high electric field of -500kV/cm.
이규정,김인식,남효진,박철,Lee, Kyu-Chung,Kim, In-Sik,Nam, Hyo-Jin,Park, Chul 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.7
Low cost high efficiency single crystal silicon solar cells for terrestrial applications have been fabricated by using inexpensive materials such as solar grade silicon wafer and pastes, and mass production processes such as screen printing and spray. Under 100 mW/cm$^2$ (AM 1.5) and $25^{\circ}C$ conditions conversion efficiency of 16.48% was obtained by anon fire-thru process and 15.55% by fire-thru process.
저전압 대회전을 위한 분리된 압전 구동기에 의한 미소거울
金成眞(Sung-Jin Kim),陳令鉉(Young-Hyun Jin),李源哲(Won Chul Lee),曺永昊(Young-Ho Cho),南孝鎭(Hyo-Jin Nam),夫鍾郁(Jong Uk Bu) 대한전기학회 2006 전기학회논문지C Vol.55 No.3
This paper presents a torsional micromirror detached from PZT actuators (TMD), whose rotational motion is achieved by push bars in the PZT actuators detached from the micromirror. The push bar mechanism is intended to reduce the bending, tensile and torsional constraints generated by the conventional bending bar mechanism, where the torsional micromirror is attached to the PZT actuators (TMA). We have designed, fabricated and tested prototypes of TMDs for single-axis and dual-axis rotation, respectively. The single-axis TMD generates the static rotational angle of 6.1˚ at 16 VDC, which is 6 times larger than that of single-axis TMA, 0.9˚. However, the rotational response curve of TMD shows hysteresis due to the static friction between the cover and the push bar in the PZT actuator. We have shown that 63.2% of the hysteresis is due to the static friction caused by the initial contact force of the PZT actuator. Without the initial contact force, the rotational response curve of TMD shows linear voltage-angle characteristics. The dual-axis TMD generates the static rotational angles of 5.5˚ and 4.7˚ in x-axis and y-axis, respectively at 16 VDC. The measured resonant frequencies of dual-axis TMD are 2.1±0.1 ㎑ in x-axis and 1.7±0.1 ㎑ in y-axis. The dual-axis TMD shows stable operation without severe wear for 21.6 million cycles driven by 16 Vp-p sinusoidal wave signal at room temperature.
2단계 증착법으로 제조된 Pb(Zr, Ti)O$_3$압전 박막의 전기적 특성 및 잔류 응력에 관한 연구
김혁환,이강운,이원종,남효진,Kim, Hyuk-Hwan,Lee, Kang-Woon,Lee, Won-Jong,Nam, Hyo-Jin 한국재료학회 2001 한국재료학회지 Vol.11 No.9
High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.
김영식,장성수,이선영,진원혁,조일주,남효진,부종욱,Kim Young-Sik,Jang Seong-Soo,Lee Caroline Sun-Young,Jin Won-Hyeog,Cho Il-Joo,Nam Hyo-Jin,Bu Jong-Uk 정보저장시스템학회 2006 정보저장시스템학회논문집 Vol.2 No.2
In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.
웨이퍼 본딩을 이용한 탐침형 정보 저장장치용 열-압전 켄틸레버어레이
김영식 ( Young Sik Kim ),장성수 ( Seong Soo Jang ),이선영 ( Sun Young Lee ),진원혁 ( Won Hyeong Jin ),조일주 ( Il Joo Cho ),남효진 ( Hyo Jin Nam ),부종욱 ( Jong Uk Bu ) 정보저장시스템학회 2005 추계학술대회논문집 Vol.2005 No.-
In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric Si3N4 cantilevers. In this process, we did not use a SOl wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric ShN4 cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric ShN4 cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.