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Zhong, Zhun,Zhang, Fei,Yin, Shu-Cheng Asian Pacific Journal of Cancer Prevention 2015 Asian Pacific journal of cancer prevention Vol.16 No.6
Purpose: To investigate effects of the TESTIN (TES) gene on proliferation and migration of highly metastatic nasopharyngeal carcinoma cell line 5-8F and the related mechanisms. Materials and Methods: The target gene of human nasopharyngeal carcinoma cell line 5-8F was amplified by PCR and cloned into the empty plasmid pEGFP-N1 to construct a eukaryotic expression vector pEGFP-N1-TES. This was then transfected into 5-8F cells. MTT assays, flow cytometry and scratch wound tests were used to detect the proliferation and migration of transfected 5-8F cells. Results: A cell model with stable and high expression of TES gene was successfully established. MTT assays showed that the OD value of 5-8F/TES cells was markedly lower than that of 5-8F/GFP cells and 5-8F cells (p<0.05). Flow cytometry showed that the apoptosis rate of 5-8F/TES cells was prominently increased compared with 5-8F/GFP cells and 5-8F cells (p<0.05). In vitro scratch wound assays showed that, the width of the wound area of 5-8F/TES cells narrowed slightly, while the width of the wound area of 5-8F/ GFP cells and 5-8F cells narrowed sharply, suggesting that the TES overexpression could inhibit the migration ability. Conclusions: TES gene expression remarkably inhibits the proliferation of human nasopharyngeal carcinoma cell line 5-8F and reduces its migration in vitro. Thus, it may be a potential tumor suppressor gene for nasopharyngeal carcinoma.
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhun Zhong,Soon-Young Oh,Won-Jae Lee,Ying-Ying Zhang,Soon-Yen Jung,Shi-Guang Li,Ga-Won Lee,왕진석,이희덕,Yeong-Cheol Kim 한국전기전자재료학회 2008 Transactions on Electrical and Electronic Material Vol.9 No.2
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to NiSi₂ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to 650 ˚C and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
Study of Thermal Stability of Ni Silicide using Ni-V Alloy
Zhong, Zhun,Oh, Soon-Young,Lee, Won-Jae,Zhang, Ying-Ying,Jung, Soon-Yen,Li, Shi-Guang,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Kim, Yeong-Cheol The Korean Institute of Electrical and Electronic 2008 Transactions on Electrical and Electronic Material Vol.9 No.2
In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.
Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs
Zhang, Ying-Ying,Lee, Won-Jae,Zhong, Zhun,Li, Shi-Guang,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Lim, Sung-Kyu The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Stress Dependence of Thermal Stability of Nickel Silicide forNano MOSFETs
Ying-Ying Zhang,Won-Jae Lee,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,이가원,왕진석,이희덕,Sung-Kyu Lim 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride (Si3N4) layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at 500 oC for 30 sec. 2000 Å thick Si3N4 layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the Si3N4 layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Ying-Ying Zhang,Jungwoo Oh,In-Shik Han,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Hong-Sik Shin,Won-Ho Choi,Hyuk-Min Kwon,Wei-Yip Loh,Majhi, P.,Jammy, R.,Hi-Deok Lee IEEE 2009 IEEE transactions on electron devices Vol.56 No.2
<P>Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 degrees C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95Pd0.05, alloy could be promising for the high mobility Ge MOSFET applications.</P>
나노급 CMOSFET을 위한 Boron Cluster(B18H22)가 이온 주입된(SOI 및 Bulk)기판에 Ni-V합금을 이용한 Ni-silicide의 열안정성 개선
이세광,이원재,장잉잉,종준,정순연,이가원,왕진석,이희덕,Li, Shu-Guang,Lee, Won-Jae,Zhang, Ying-Ying,Zhun, Zhong,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.6
In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.
Xu, Yan-Song,Zhao, Bo,Long, Chen-Yan,Li, Hui,Lu, Xing,Liu, Gang,Tang, Xiao-Zhun,Tang, Wei-Zhong Asian Pacific Journal of Cancer Prevention 2014 Asian Pacific journal of cancer prevention Vol.15 No.11
Background: To evaluate relationship between the cyclooxygenase-2 promoter 765G/C polymorphism and digestive cancer risk in China. Materials and Methods: A literature search through February 2014 was performed using PubMed, Chinese Biomedical Literature Database (CBM) and China National Knowledge Infrastructure (CNKI) databases, and a meta-analysis was performed with RevMan 5.2 software for odds ratios and 95%CIs. Results: In total, 9 articles with 3,263 cases and 4,858 controls were included in this meta-analysis. The pooled OR (95%CIs) in the co-dominant model (GC vs GG) was 1.56 [1.19, 2.06], and in the dominant model ((CC+GC) vs GG), the pooled OR was 1.59 [1.21, 2.09] in overall cancers. In the subgroup analysis, stratified by cancer type, significant associations were found that the-765C allele had increased pancreatic cancer and gastric risk. No significant liver cancer and colorectal cancer risk of COX-2 -765G/C polymorphism was found. Conclusions: These findings suggest that COX-2-765*C is related to cancer susceptibility and may increase gastric and pancreatic cancer risk.
Ni-Silicide 형성 후 후속공정 열처리에 의한 Abnormal Oxidation 현상을 As-doping된 Bulk와 SOI에서 비교 연구
정순연(Soon-Yen Jung),이원재(Won-Jae Lee),장잉잉(Ying-Ying Zhang),종준(Zhun Zhong),이세광(Shi-Guang Li),이가원(Ga-Won Lee),왕진석(Jin-Suk Wang),이희덕(Hi-Deok Lee) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
In this paper, we found an unintended oxidation on the Nickel-silicide surfaces, which arises only As doped substrate when we adopt it to the BF₂, B₁₁ and As doped substrates. The abnormal oxidation phenomena happened when As doped substrate is annealed after the NiSi formation. It is revealed that the main reason of the oxidation is the thermal energy that working between As and Si in the Silicide layer and substrate. Oxide distributes only above the silicide-island when the agglomeration happens. It is highly necessary to prevent the unwanted oxygen because it can cause fatal defects to the nano CMOSFET devices.
나노급 CMOSFET을 위한 니켈-코발트 합금을 이용한 니켈-실리사이드의 열안정성 개선
박기영,정순연,한인식,장잉잉,종준,이세광,이가원,왕진석,이희덕,Park, Kee-Young,Jung, Soon-Yen,Han, In-Shik,Zhang, Ying-Ying,Zhong, Zhun,Li, Shi-Guang,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.1
In this paper, the Ni-Co alloy was used for thermal stability estimation comparison with Ni structure. The proposed Ni/Ni-Co structure exhibited wider range of rapid thermal process windows, lower sheet resistance in spite of high temperature annealing up to $700^{\circ}C$ for 30 min, more uniform interface via FE-SEM analysis, NiSi phase peak. Therefore, The proposed Ni/Ni-Co structure is highly promising for highly thermal immune Ni-silicide for nano-scale MOSFET technology.