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박철휴(Chulhue Park),홍성일(Seongil Hong),박현철(Hyunchul Park) 대한기계학회 2004 대한기계학회 춘추학술대회 Vol.2004 No.4
The performance of a mixed H<SUB>∞</SUB> / H₂ design with pole placement constraints based on robust vibration control for a piezo/beam system is investigated. The governing equation of motion for the piezo/beam system is derived by Hamilton’s principle. The assumed mode method is used to discretize the governing equation into a set of ordinary differential equation. A robust controller is designed by H<SUB>∞</SUB> / H₂ feedback control law that satisfies additional constraints on the closed-loop pole location in the face of model uncertainties, which are derived for a general class of convex regions of the complex plane. These constraints are expressed in terms of linear matrix inequalities (LMIs) approach for the multiobjective synthesis. The validity and applicability of this approach for vibration suppressions of SMART structural systems are discussed by damping out the multiple vibrational modes of the piezo/beam system.
Seongil Hong,Gyuhyun Park,Wonsuk Lee,Sincheon Kang 제어로봇시스템학회 2018 제어로봇시스템학회 국제학술대회 논문집 Vol.2018 No.10
We focus on the realization of the hierarchical inverse kinematics as a practical means of a hard real-time motion planning for a humanoid robot. To achieve complex on-line full body manipulation performance, a task priority is established among the tasks to precisely resolve task conflicts and all algorithms are described in recursive equations so as to minimize computation time. Formulating the kinematic problem in a least-square optimization enables us to derive solutions in a unified and consistent framework. The performance is validated through numerical simulations with bearing mind of rescue robot applications and finally, the inverse kinematic solution is found within 0:3msec on average for 19 degrees of freedom control.
Park, Sang‐,Hee K.,Hwang, Chi‐,Sun,Ryu, Minki,Yang, Shinhyuk,Byun, Chunwon,Shin, Jaeheon,Lee, Jeong‐,Ik,Lee, Kimoon,Oh, Min Suk,Im, Seongil WILEY‐VCH Verlag 2009 ADVANCED MATERIALS Vol.21 No.6
<P><B>Transparent ZnO thin‐film transistors (TFTs)</B> with a defect‐controlled channel and channel/dielectric interface maintain good photo‐stability during device operation. The figure shows a cross‐sectional view of a top‐gate ZnO‐based transparent TFT/storage capacitor cell structure, connected to front‐panel organic‐light‐emitting‐diode pixels to operate in bottom emission mode. </P>
Park, Ji Hoon,Lee, Hee Sung,Lee, Junyeong,Lee, Kimoon,Lee, Gyubaek,Yoon, Kwan Hyuck,Sung, Myung M.,Im, Seongil The Royal Society of Chemistry 2012 Physical chemistry chemical physics Vol.14 No.41
<P>We report on the fabrication of <I>N</I>,<I>N</I>′-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide–C13 (PTCDI–C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al<SUB>2</SUB>O<SUB>3</SUB> whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. Among all the devices, the OTFTs with CYTOP-modified dielectrics exhibit the most superior device performance and stability. The optimum post-annealing temperature for organic n-channels on CYTOP was also found to be as low as 80 °C, although the post-annealing was previously implemented at 120–140 °C for PTCDI domain growth in general. The low temperature of 80 °C hardly damages the CYTOP/n-channel organic interface which is deformed at a temperature higher than the glass transition temperature of CYTOP (∼110 °C). The pentacenequinone passivation layer turned out to be helpful to keep the interfacial trap density minimum, according to the photo-excited charge collection spectroscopy results for our 80 °C-annealed OTFTs with CYTOP-modified dielectrics.</P> <P>Graphic Abstract</P><P>We report on the fabrication of <I>N</I>,<I>N</I>′-ditridecyl-perylene-3,4:9,10-tetracarboxylic diimide–C13 (PTCDI–C13), n-channel organic thin-film transistors (OTFTs) with 30 nm Al<SUB>2</SUB>O<SUB>3</SUB> whose surface has been un-modified or modified with hexamethyldisilazane (HMDS) and thin hydrophobic CYTOP. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c2cp41544e'> </P>
Park, Kyung Sun,Kim, Sejoon,Kim, Hongbum,Kwon, Deokhyeon,Koo Lee, Yong-Eun,Min, Sung-Wook,Im, Seongil,Choi, Hyoung Joon,Lim, Seulky,Shin, Hyunjung,Koo, Sang Man,Sung, Myung Mo RSC Pub 2015 Nanoscale Vol.7 No.42
<P>Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.</P>