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Influence of Hemorrhagic Anemia on the Juxtaglomerular Cells of Rabbits
Kwun, Hung Sik,Lim, Soo Kil,Chang, Dae Soo CATHOLIC MEDICAL CENTER 1974 Bulletin of the Clinical Research Institute Vol.2 No.1
Juxtaglomerular cells are myoepitheloid cells located within the media of the afferent arterioles of glomeruli. The present-day evidence suggsts that the juxtaglomerular cells elaborate renin and that, in addition to its pressor effect renin stimulates the zona glomerulosa of the adrenal cortex to increase the secretion of aldosterone. From the experimental results or clinical reports, the factors controlling juxtaglomerular cells has been followed: Juxtaglomerular cells are hypergranulated (high renin content) in decreased blood pressure or presence of renal ischemia, adrenalectomized animals, Addison's disease or adrenogenital syndrome, hyponatremia, ascites and edema, …., etc. And juxtaglomerular cells are hypogranulated in elevated blood pressure or metacorticoid hypertension, hypernatremia, …., etc. This experiment was performed to study the morphological responses of juxtaglomerular cells to hemorrhagic anemia in the rabbit kidney.
정진웅,최월봉,권흥식,Chung Jin-Woong,Choi Wol-Bong,Kwun Hung-Sik 한국현미경학회 1978 Applied microscopy Vol.8 No.1
An attempt has been made to discriminate the synapses in the striatum consisting caudate nucleus, putamen and fundus striati of the cat with emphasis on the characteristic structures of axon terminals and postsynaptic profiles. The differentiation is based on the size and shape of vesicle in the bouton terminal, and the symmetrical or asymmetrical thickening the pre- and postsynaptic membrane. Four types of synapses could be differentiated: Type I: the bontons with asymmetrical,synaptic thickenings contain round 45 nm diameter vesicles and contact cell soma, dendritic shafts and dendritic spines (74%). Type II : the boutons contain round 45nm diameter vesicles and are associated with symmetrical membrane thickenings. These synapses are formed on the soma and dendritic shafts (6%). Type III: the boutons with symmetrical membrane thickenings contain 50-60 nm diameter pleomorphic vesicles, and contact soma and dendritic shafts (18%). Type IV: the terminals contain flattened vesicles ($25{\times}45 nm$) and are associated with symmetrical membrane thickenings. These synapses are found in contact with soma and dendritic shafts. Additionally, the bouton en passant, which is expanded from myelinated or unmyelinated axons containing round vesicles (45nm diameter) contacts the dendritic shaft or dendritic spine with asymmetrical membrane thickenings. Two unusual types of synapses, axo-axonic and dendro-dendritic, are found occasionally.
Effects of spontaneous nitrogen incorporation by a 4H-SiC(0001) surface caused by plasma nitridation
Kim, Dae-Kyoung,Kang, Yu-Seon,Jeong, Kwang-Sik,Kang, Hang-Kyu,Cho, Sang Wan,Chung, Kwun-Bum,Kim, Hyoungsub,Cho, Mann-Ho The Royal Society of Chemistry 2015 Journal of Materials Chemistry C Vol.3 No.19
<▼1><P>Change in defect states in the nitrided 4<I>H</I>-SiC(0001) channel formed by a plasma nitridation (PN) process was investigated as a function of rapid processing time (180 s) at room temperature.</P></▼1><▼2><P>Change in defect states in the nitrided 4<I>H</I>-SiC(0001) channel formed by a plasma nitridation (PN) process was investigated as a function of rapid processing time (180 s) at room temperature. The electronic structure of the interface between the nitride layer and the SiC substrate was investigated using X-ray photoelectron spectroscopy (XPS), medium-energy ion scattering (MEIS) and first-principles DFT calculations. The findings clearly showed that N adsorption occurred through the spontaneous incorporation at the SiC subsurface, resulting in the formation of an N-laminated structure at the interface. The results are consistent with an enhancement in the interface electrical characteristics because the energetically most stable gap state of SiC could only be observed in the N-laminate structure. In particular, the stress induced leakage current (SILC) characteristics showed that the generation of the defect state was significantly suppressed in a metal oxide semiconductor (MOS) structure with a nitride layer. These results provide an in-depth understanding of the process involved in the incorporation of N into the SiC subsurface and for the enhanced electrical characteristics of the interfacial nitride layer on SiC in the PN system.</P></▼2>