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N. J. Suthan Kissinger,NATARAJAN VELMURUGAN,K. Perumal 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.4
Zinc-Selenide (ZnSe) thin films were prepared by using physical vapor deposition under a vacuum of 5 × 10−6 Torr by using an electron beam evaporated technique at different substrate temperatures, RT, 100, 200, and 300 ˚C. X-ray diffraction analysis (XRD) indicates that the films are polycrystalline, having a f.c.c zincblende structure irrespective of their substrate temperature. All the films show preferred orientation along the (1 1 1) plane parallel to the substrates. The microstructural parameters, such as the lattice constant, crystallite size, stress, strain, and dislocation density, are calculated, and the effect of substrate temperature on the deposited films was discussed. The grain size of the deposited ZnSe films is observed to be small and is within the range of 12 to 32 nm, and the grain size is observed to be increase from 12.5 to 31.9 nm with increasing substrate temperature. Optical measurements indicate the existence of a direct-bandgap-allowed optical transition with a corresponding energy gap in the range of 2.95 – 2.70 eV. Zinc-Selenide (ZnSe) thin films were prepared by using physical vapor deposition under a vacuum of 5 × 10−6 Torr by using an electron beam evaporated technique at different substrate temperatures, RT, 100, 200, and 300 ˚C. X-ray diffraction analysis (XRD) indicates that the films are polycrystalline, having a f.c.c zincblende structure irrespective of their substrate temperature. All the films show preferred orientation along the (1 1 1) plane parallel to the substrates. The microstructural parameters, such as the lattice constant, crystallite size, stress, strain, and dislocation density, are calculated, and the effect of substrate temperature on the deposited films was discussed. The grain size of the deposited ZnSe films is observed to be small and is within the range of 12 to 32 nm, and the grain size is observed to be increase from 12.5 to 31.9 nm with increasing substrate temperature. Optical measurements indicate the existence of a direct-bandgap-allowed optical transition with a corresponding energy gap in the range of 2.95 – 2.70 eV.
Yun, Seok-Hyo,Kissinger, Suthan,Kim, Don Wook,Cha, Jun-Ho,Ra, Yong-Ho,Lee, Cheul-Ro Cambridge University Press (Materials Research Soc 2010 Journal of materials research Vol.25 No.9
<P>We demonstrated the growth of indium nitride (InN) nanowires on Si(111) substrates by metalorganic chemical vapor deposition without the use of any intermediate GaN or AlN buffer layer. The InN nanowires were grown by forming the Au + In droplets and In droplets on the Au- and In-coated Si substrate. The growth conditions such as chamber pressure, chamber temperature, reaction gas flow rate, and carrier gas flow rate were optimized to yield nanowires free from contamination. Depending on the growth parameters different growth regimes for the InN nanowires were identified. The strength of self-catalytic route has been highlighted. The morphology and microstructures of samples were characterized by x-ray diffraction and scanning electron microscopy (SEM). The transmission electron microscopy and SEM investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 400 nm, and lengths up to 3 µm. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 0.77 eV.</P>
J. Suthagar,N. J. Suthan Kissinger,G. M. Sharli Nath,K. Perumal 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.1
ZnSe1−xTex films with different tellurium (Te) contents were deposited by using an electron beam(EB) evaporation technique onto glass substrates for applications to optoelectronic devices. Thestructural and the optical properties of the ZnSe1−xTex films were studied in the present work. The host material ZnSe1−xTex, were prepared by using the physical vapor deposition method ofthe electron beam evaporation technique (PVD: EBE) under a pressure of 1 × 10−5 mbar. TheX-ray diffractogram indicated that these alloy films had cubic structure with a strong preferentialorientation of the crystallites along the (1 1 1) direction. The optical properties showed that theband gap (Eg) values varied from 2.73 to 2.41 eV as the tellurium content varied from 0.2 to 0.8. Thus the material properties can be altered and excellently controlled by controlling the systemcomposition x.
차준호,K. Ashok,N. J. Suthan Kissinger,라용호,심재관,김진수,이철로 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.3
In this paper, low-resistivity molybdenum (Mo) thin films were deposited on stainless- steel and soda-lime glass substrates with good adhesion at room temperature by using a direct current (DC) magnetron technique. The Mo thin films were annealed at different temperatures in order to enhance their structural and electrical properties so that they could be used for the solar cell applications. The Mo thin film is the bottom electrode used in the chalcopyrite solar cell family (CuInSe<sub>2</sub> and its alloys) because of the low resistivity of the Cu(InGa)Se<sub>2</sub>/Mo contact. X-ray diffraction (XRD) analysis showed that these Mo films were polycrystalline in nature and exhibited better crystallization with increasing crystallite size as the annealing temperature was raised from 400 to 800 ℃. The Mo film’s crystallite size was observed to increase from 80 to 450 nm as the annealing temperature was increased from as-deposited to 800 ℃. The microstructure, surface morphology and homogenous grains, were observed using field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM).
Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD
Park, Ji-Hyeon,Kim, Min-Hee,Kissinger, Suthan,Lee, Cheul-Ro The Royal Society of Chemistry 2013 Nanoscale Vol.5 No.7
<P>We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).</P>
Lee, Y.M.,Navamathavan, R.,Song, K.Y.,Park, J.H.,Kim, D.W.,Kissinger, S.,Kim, J.S.,Lee, C.R. North-Holland Pub. Co 2010 Journal of crystal growth Vol.312 No.16
One-dimensional GaN nanostructures are promising materials for nano-device applications. In the present work, we demonstrated the successful growth of GaN NWs on platinum coated Si(111) substrates. The GaN NWs density and degree of alignment were found to be highly sensitive to the growth temperatures. The GaN NWs were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL), cathodoluminescence (CL) and high-resolution transmission electron microscopy (HR-TEM). The density of GaN NWs was increased monotonically with increase in growth temperature. Relatively, high density of GaN NWs was observed for the growth temperature of 950<SUP>o</SUP>C. It was interestingly observed that the peculiar bicrystalline structure of GaN NWs both contain identical crystal structure with a finite interface. We concluded that the Pt acts as a catalyst for GaN NWs growth, and that it provides control over density and position of GaN NWs growth, which can be ultimately utilized for nano-device fabrication.