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DRIE 시스템을 이용한 식각 공정에서 RF 소스 전력과 PR 패턴 사이즈가 깊은 Silicon Via 측벽 표면 형상에 미치는 영향 평가
김동표(Dong-Pyo Kim),김경섭(Kyung-Seob Kim),정중채(Jung-Chae Jeong) 대한전기학회 2022 전기학회논문지 Vol.71 No.1
It has been very difficult to etch deep silicon via with photo-resist (PR) during deep reactive ion etching (DRIE) process because of the erosion of PR and the formation of vertical striations. The effects of RF source power and PR pattern size were researched on the etch rate, via top size and etch depth. The PR mask patterns with 10 μm thickness were composed of 10, 20, 30 and 40 μm squares. The etch rates and the etch profiles of deep silicon vias were monitored by the cross sectional FE-SEM images. As the RF source power and PR pattern size were increased, we obtained higher etch rate and deeper etch profiles. However, we observed the vertical striations at the surface of deep silicon vias at higher RF source power.
무기고분자를 이용한 $SiC/MoSi_2$ 혼합상의 합성
김동표,이재도,Kim, Dong-Pyo,Lee, Jae-Do 한국재료학회 1996 한국재료학회지 Vol.6 No.5
세라믹 전구체로서 PCS와 PMS 두 종류의 실린콘 고분자를 합성하여 7, 15, 33 wt.%의 Mo분말, Mo(CO)6 금속화합물과 혼합한 뒤 130$0^{\circ}C$이상 가열하면 탄화물과 규화물의 다양한 세라믹복합재로 전이되었다. 특히 PMS용액에 7, 15 wt.% Mo분말을 분산하여 초음파 처리하면 열분해 수율이 60%까지 개선되고 전도성 소재인 SiC/MoSi2 복합조성의 세라믹스가 합성되었다. 그러나 풍부한 유기 반응기를 가진 PCS와 카보닐기가 탄소공급원으로 작용하는 Mo(CO)6를 반응물로 사용하였을 때는 SiC와 Mo2C와 같은 탄화물과 미향의 MoSi2 그리고 미확인상을 포함한 세라믹 복합상들이 얻어졌다.
BCl₃/Cl₂/Ar 플라즈마에서의 Na<SUB>0.5</SUB>K<SUB>0.5</SUB>NbO₃ 박막의 표면반응
김동표(Dong-Pyo Kim),엄두승(Doo-Seung Um),김관하(Gwan-Ha Kim),우종창(Jong-Chang Woo),김창일(Chang-Il Kim) 한국표면공학회 2008 한국표면공학회지 Vol.41 No.6
The etch of (Na0.5K0.5)NbO₃ (NKN) thin film was performed in BCl₃/Cl₂/Ar inductively coupled plasma. It was found that the 1sccm addition BCl3 (5%) into Cl2/Ar plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 ㎚/min at BCl₃ (1 sccm)/Cl₂ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra o f XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.
다파장 IR과 NIR 모듈의 평균 수명 예측에 관한 연구
김동표,김경섭,Kim, Dong Pyo,Kim, Kyung Seob 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.1
Recently, infrared (IR) and near-infrared (NIR) light-emitting diodes (LEDs) were widely used for home medical applications owing to its low output power and wide exposed area for curing. For deep penetration of the light under the skin, multiple LEDs with wavelengths of 700~10,000 nm were located on a flexible printed circuit board. When multiple wavelengths of LEDs were soldered on a circuit board, the lifetime of LED module highly depends on LEDs with a short lifetime. The mean time to failure (MTTF) was able to calculate with the experimental results under high temperature and the Arrhenius model. The results of this study could help companies to approve the warranty of LED modules and its product.