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Cl<sub>2</sub>CF<sub>4</sub>/Ar 유도결합 플라즈마에 의해 식각된 SBT 박막의 표면 손상
김동표,김창일,이철인,김태형,이원재,유병곤 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.7
$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.
김동표,김창일,Kim, Dong-Pyo,Kim, Chang-Il 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.4
최근에 빠른 쓰기/읽기 속도, 적은 소비 전력과 비휘발성을 가지는 메모리 캐패시터의 유전 재료로서 SrBi/sub 2/Ta/sub 2/O/sub 9/(SBT)에 대한 관심이 집중되고 있다. 강유전체 물질을 이용한 고밀도 FeRAM을 생산하기 위하여서는 식각에 의한 패턴이 형성되어야 한다. 강유전체 물질의 성장과 그 전기적 특성에 관한 연구와 발표는 많이 발표 되고 있다. 그러나, 강유전체 물질의 식각의 어려움 때문에 SBT 박막 식각에 관한 연구는 거의 전무하다고 할 수 있다. 그러므로, SBT 박막의 식각의 특성을 알아보기 위하여, SBT 박막은 CF/sub 4/Ar 가스 플라즈마를 이용하여 MEICP로 식각 되어졌다. XPS를 이용하여 식각 된 SBT 박막의 표면에서의 화학 반응을 분석하였고, XPS 분석을 검증하기 위하여 SIMS 분석을 하여 비교하였다. Recently, SrBi$_{2}$Ta$_{2}$ $O_{9}$(SBT) and Pb(Zr,Ti) $O_{3}$(PZT) were much attracted as materials of capacitor for ferroelectric random access memory(FRAM) with higher read/ write speed, lower power consumption and nonvolartility. SBT thin film has appeared as the most prominent fatigue free and low operation voltage. To highly integrate FRAM, SBT thin film has to be etched. A lot of papers have been reported over growth of SBT thin film and its characteristics. However, there are few reports about etching SBT thin film owing to difficult of etching ferroelectric materials. SBT thin film was etched in CF$_{4}$Ar plasma using magnetically enhanced inductively coupled plasma (MEICP) system. In order to investigate the chemical reaction on the etched surface of SBT thin films, X-ray Photoelecton spectrosocpy (XPS) and Secondary ion mass spectroscopy(SIMS) was performed.
Dry Etching of High-k Dielectric Thin Films in HBr/Ar Plasma
김동표,김관하,우종창,Hwan-Jun Kim,이철인,Sewung-Kwon Lee,Tae-Woo Jung,Seung-Chan Moon,Sang-Wook Park,김창일 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
High-k thin films (HfO2 and Al2O3) were etched in HBr/Ar high-density plasma. HfO2 and Al2O3 with high dielectric constants are promising candidates for the gates of metal-oxide-semiconductor devices. The maximum etch rates for HfO2 and Al2O3 were 49.1 nm/min and 42.5 nm/min, respectively. The etch rates of both HfO2 and Al2O3 thin films were faster for higher contents of HBr. The chemical states of high-k thin films were investigated using X-ray photoelectron spectroscopy. The comparisons of the as-deposited and the etched thin films for Hf 4f, Al 2p and O 1s showed few changes in the peak shapes and their binding energies were moved to higher energy after exposure to a HBr plasma. No new peaks due to etching byproducts appeared. Clean side wall and the steep etch profiles for high-k thin films could be obtained using a 100 % HBr plasma. These results indicate that HfO2 and Al2O3 thin films can be effectively removed by using a chemical etching process.
김동표,고중곤,정애영,문용택 한국공업화학회 1998 응용화학 Vol.2 No.1
We were chosen Seongnam sludge with the highest ratio of Al₂O₃/SiO(0.912) and Sukseong sludge with the lowest ratio of Al₂O₃/SiO₂(0.345) out of various sludges. It has been investigated the relationship between Al₂O₃/SiO₂ and its adsorption capability, then make criteria to choose the optimum sludge for final applications. The adsorption properties of heat-treated sludges were determined with the following parameters; three types of heavy metal ions(Cd^(+3), Cr^(+6), Pb^(+3)), the concentration, adsorption period and pH of the solutions.
유리섬유 강화 활성탄소섬유의 제조와 산성 가스 흡착에 관한 연구
김동표,조득희,이형근,민동수,정애영 한국공업화학회 1998 응용화학 Vol.2 No.1
The activation carbon has mostly high surface areas over 1000㎡/g but has prepared by expensive process. So the study on using with activation carbon is very active. We prepared glassfiber reinforced activation carbon fabric with using glassfiber and novolac phenolic resin and activated CO₂, NH₃, N₂ gas. Besides we adsorbed SO_X with activated samples and measured surface areas by a method of BET.
과불화기를 함유한 글라이시딜에테르의 경화특성 및 표면특성
김동표,이은아,김영운,정근우,서용걸 한국공업화학회 2001 응용화학 Vol.5 No.2
A series of alcohols with perfluorinated segments F(CF₂)m(CH₂)_(n+2)-OH, with m=8, 10 and n=10 was synthesized. The alcohols were reacted with epichlorohydrin in the presence of NaOH to produce perfluoro glycidylether, and characterized by ¹H-NMR, FT-IR, and GC etc. The perfluoro glycidylethers were cured with several diepoxys such as DGEHFBA, DGEBF, and DGEBA and amine curing agents such as DETA, TETA and DYTEK A amine. The cured epoxys were characterized by thermal properties through DSC, surface morphorogy by SEM, water-repellency by contact angle.