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최윤호,정형석,Y.H. Choi,H.S. Chung 한국전자통신연구원 2023 전자통신동향분석 Vol.38 No.6
Lithium accounts for only 0.0017% of the earth crust, and it is produced in geographically limited regions such as South America, the United States, and China. Since the first half of 2017, the price of lithium has been continuously increasing, and with the rapid adoption of electric vehicles, lithium resources are expected to be depleted in the near future. In addition, economic blocs worldwide face intensifying scenarios such as competition for technological supremacy and protectionism of domestic industries. Consequently, Korea is deepening its dependence on China for core materials and is vulnerable to the influence of the United States Inflation Reduction Act. We analyze post-lithium secondary battery technologies that rely on more earth-abundant elements to replace lithium, whose production is limited to specific regions. Specifically, we focus on the technological status and issues of sodium-ion, zinc-air, and redox-flow batteries. In addition, research trends in post-lithium secondary batteries are examined. Post-lithium secondary batteries seem promising for large-capacity energy storage systems while reducing the costs of raw materials compared with existing lithium-based technologies.
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최윤호,김용태,이석재,이은정,Kyoung G. Lee,임성갑 한국고분자학회 2020 Macromolecular Research Vol.28 No.3
Nucleic acid (NA) extraction and purification are one of the crucial steps for NA-based molecular diagnosis. However, the currently developed methods are still suffering from many issues including long process time, complicated steps, requirement of trained personnel and potential inhibition caused by chaotropic agents and/ or residual reagents. Herein, a surface-modified NA extraction microchip (SNC) is newly fabricated by introducing poly(2-dimethylaminomethyl styrene) (pDMAMS) film engaged directly on the microchip surface via initiated chemical vapor deposition (iCVD) process. The positively charged SNC inner surface could directly capture the negatively charged NA efficiently and its performance is confirmed by fluorescence microscopy and X-ray photoelectron spectroscopy. The developed SNC exhibits the deoxyribonucleic acid (DNA) capture efficiency higher than 92% regardless of initial DNA concentration in range of 20 ng/μL to 0.01 ng/μL. With this versatile DNA-capturing surface, the genomic DNAs of Escherichia Coli O157:H7 (E. coli O157:H7) is successfully extracted directly from cell lysate in the SNC with higher than 90% of efficiency within 30 min. The extraction time can be reduced to at least of 10 min maintaining extraction efficiency higher than 50%. Furthermore, the genomic DNAs are directly extracted using the SNC without loss from various real samples including juice, milk and blood serum. The proposed SNC enables us to perform an one-step NA extraction for molecular diagnosis and has the potential to be integrated into a micro-total analysis in the fields of point-of-care diagnosis.
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As 차단 시간 변화에 의한 InAs 양자점의 광학적 특성
최윤호,류미이,조병구,김진수,Choi, Yoon Ho,Ryu, Mee-Yi,Jo, Byounggu,Kim, Jin Soo 한국진공학회 2013 Applied Science and Convergence Technology Vol.22 No.2
The optical properties of InAs quantum dots (QDs) grown on GaAs substrates grown by molecular beam epitaxy have been studied using photoluminescence (PL) and time-resolved PL measurements. InAs QDs were grown using an arsenic interruption growth (AIG) technique, in which the As flux was periodically interrupted by a closed As shutter during InAs QDs growth. In this study, the shutter of As source was periodically opened and closed for 1 (S1), 2 (S2), or 3 s (S3). For comparison, an InAs QD sample (S0) without As interruption was grown in a pure GaAs matrix for 20 s. The PL intensity of InAs QD samples grown by AIG technique is stronger than that of the reference sample (S0). While the PL peaks of S1 and S2 are redshifted compared to that of S0, the PL peak of S3 is blueshifted from that of S0. The increase of the PL intensity for the InAs QDs grown by AIG technique can be explained by the reduced InAs clusters, the increased QD density, the improved QD uniformity, and the improved aspect ratio (height/length). The redshift (blueshift) of the PL peak for S1 (S3) compared with that for S0 is attributed to the increase (decrease) in the QD average length compared to the average length of S0. The PL intensity, PL peak position, and PL decay time have been investigated as functions of temperature and emission wavelength. S2 shows no InAs clusters, the increased InAs QD density, the improved QD uniformity, and the improved QD aspect ratio. S2 also shows the strongest PL intensity and the longest PL decay time. These results indicate that the size (shape), density, and uniformity of InAs QDs can be controlled by using AIG technique. Therefore the emission wavelength and luminescence properties of InAs/GaAs QDs can also be controlled.
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