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MEMS 적용을 위한 Thermal CVD 방법에 의해 증착한 SiC막의 반응성 이온 Etching 특성 평가
최기용,최덕균,박지연,김태송 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.3
In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observe
The Structure of Constituent Negation in English
최기용 한국생성문법학회 2004 생성문법연구 Vol.14 No.2
It has been implicitly and explicitly (Kim and Sag 2002) claimed that the English constituent negation not adjoins to an XP that it modifies. In this article I argue against such a claim. I argue that English constituent negation forms a base-generated X0-adjunction structure with an X0 that it cooccurs with. I first show that X0-adjunction and XP-adjunction differ from each other with respect to c-command domain and constituency, given Kayne’s (1994) definition of c-command. I then show that the scope interaction between not and a VP-adjunct, the movement of not plus an XP that it cooccurs with, and the movement and the deletion of the XP support X0-adjunction, not XP-adjunction, as the structure of constituent negation in English.
On the Nature of the Dependency between a Numeral and a Classifier
최기용 경희대학교 언어정보연구소 2011 언어연구 Vol.28 No.3
In this article, I claim that a numeral and a classifier each instantiates distinct heads and that the former has a classifier phrase as its complement in numeral classifier constructions in Korean. I also claim that in Korean, a head-final language, the surface word order between a numeral and a classifier, which is Num-Cl, is obtained via head movement of Cl to Num. When Cl is a genuine classifier, the movement is obligatory due to its clitic-like property, while when Cl is an ordinary noun with [+numerable], it is optional.
A Fine-Grained Distinction of Dative-Marking Causative Verbs in Korean: An ERP Study
최기용,정원일,박명관 현대문법학회 2020 현대문법연구 Vol.107 No.-
This paper investigates three types of dative-marking causative verbs in Korean: caused motion verbs, adversative passive verbs, and periphrastic causative verbs that unmarkedly select for dative- particled NP. Caused motion verbs arguably entertain lexically-introduced causative features, adversative passives involve lexico-syntactically oriented causative and passive morpheme(s), periphrastic causative verbs involve a syntactically active causative component. We examined the processing aspects of these three types of verbs, adopting the event-related potential (ERP) paradigm of superior temporal resolution. We crucially employed the dative/ ACC alternation well-known in Korean syntax to come up with the potentially anomalous or marked experimental conditions. The results are: motion verbs and adversative passive verbs with ACC NP, relative to ones with DAT NP, recorded the bi-phasic ERP components: N400 and reduced P600. On the other hand, periphrastic causative verbs with ACC NP, compared to ones with DAT NP, registered only reduced P600. Taken together, only the syntactically-active causative component licences the ACC Case on the NP whose dative particle is dropped. Motion verbs and adversative passive verbs are taken to fail to complete semantic integration with the preceding ACC NP, therefore attempting to undergo syntactic reanalysis.