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Anodic Bonding 에 의한 소자 열화에 관한 연구
김현철,전국진 ( Hyeon Cheol Kim,Kuk Jin Chun ) 한국센서학회 1993 센서학회지 Vol.2 No.2
Anodic Bonding technique is usually used for the fabrication of capacitive pressure sensor. This technique is that a Pyrex glass and a silicon wafer are heated and are applied by very high voltage, so surrounding electronic circuits are to be damaged. In this paper, we calculated the electric field intensity using the RC model for the anodic bonding and experimentally investigated the effects for MOS devices and operational amplifiers. The NMOS`s and PMOS`s within the 340㎛ and 380㎛ distance are so affected that their threshold voltages are changed for the case of anodic bonding at 300 ℃ and 800V. Also, the offset voltage was changed by 40mV, but DC gain and output swing were not changed for operational amplifier.
SOI를 이용한 하드 디스크 드라이브용 정전형 트랙 추적 마이크로 액추에이터의 제작
김봉환,전국진,성우경,이효정,Kim, Bong-Hwan,Chun, Kuk-Jin,Seong, Woo-Kyeong,Lee, Hyo-Jung 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.8
0.3 g의 하드디스크 드라이브에 사용될 수 있는 마그네틱 헤드를 장착할 수 있는 트랙 추적용 마이크로 액추에이터를 제작하였다. 이 액추에이터는 정전방식을 적용하였으며 2${\mu}m$ 두께의 열산화막과 20${\mu}m$ 두께의 실리콘 막이 직접접합된 SOI 웨이퍼를 이용하여 단지 3장의 마스크만을 사용하여 제작하였다. 고유진동수는 18.5 kHz이고 15 V DC와 15 V AC 전압이 동시에 가해진 상황에서 그 변위가 1.4 ${\mu}m$이였고 이때 30 V일 때 50 N의 정전력을 나타내었다. 또한 2.21 kHz의 서보 주파수 대역에서 이득여유가 7.51 dB이고 위상여유가 50.98$^{\circ}$이였다. 따라서 이 트랙추적 마이크로 액추에이터는 10 Gb/in$^2$의 기록밀도를 요구하는 하드디스크 드라이브에 충분히 이용될 수 있을 것이다. We have achieved a high aspect ratio track-following microactuator (TFMA) which is capable of driving 0.3 ${\mu}m$ magnetic head for hard disk drive (HDD). it was fabricated on silicon on insulator (SOI) wafer with 20 ${\mu}m$ trick active silicon and 2 ${\mu}m$ thick thermally grown oxide and piggyback electrostatic principle was used for driving TFMA. The first vibration mode frequency of TFMA was 18.5 kHz which is enough for a recording density of higher than 10 Gb/in$^2$. Its displacement was 1.4 ${\mu}m$ when 15 V dc bias plus 15 V ac sinusoidal driving input was applied and its electrostatic force was 50 N. The fabricated actuator shows 7.51 dB of gain margin and 50.98$^{\circ}$ of phase margin for 2.21 kHz servo-bandwidth.
DDMS를 이용한 MEMS 구조물의 새로운 점착방지 방법
김봉환,오창훈,전국진,오용수,Kim, Bong-Hwan,Oh, Chang-Hoon,Chun, Kuk-Jin,Oh, Yong-Soo 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.6
본 논문은 다결정실리콘의 점착방지를 위한 새로운 화학적 방법에 의한 코팅방법을 제시하였고 그 특성을 확인하였다. 이 코팅방법은 최근에 사용되어지고 있는 Octadecyltrichlorosilane (OTS) 나 1H,1H2H,2H-perfluorodecyltrichlorosilane (FDTS) 같은 Monoalkyltrichlorosilanes (MTS, $RSiCl_3$) 계열의 물질 대신에 Dialkyldichlorosilanes (DDS, $R2SiCl_2$) 계열의 물질을 이용하여 다결정실리콘의 표면을 바꾸는 방법이다. 이 DDS 계열의 화학물질 중에서 Dichlorodimethylsilane (DDMS, $(CH_3)2SiCl_2$)는 쉽게 구할 수 있고 다결정실리콘의 표면을 친수성에서 소수성으로 간단하고 빠른 방법으로 바꿀 수 있는 장점이 있다. 본 논문에서는 DDMS 코팅된 다결정실리콘으로 만들어진 외팔보를 3 mm길이까지 제작하여 점착현상이 전혀 일어나지 않았음을 확인하였고 이를 실제 구조물에 적용하였다. In order to achieve stiction-free polysilicon surfaces, we have suggested a new class of chemical coating precursors and confirmed their excellent characteristics. The strategy is to adopt dialkyldichlorosilanes (DDS, $R2SiCl_2$) instead of monoalkyltrichlorosilanes (MTS, $RSiCl_3$) such as octadecyltrichlorosilane (OTS) or 1H,1H2H,2H-perfluorodecyltrichlorosilane (FDTS). Dichlorodimethylsilane (DDMS, $(CH_3)2SiCl_2$) in this study is commercially available DDS with two short chains. DDMS in aprotic media spontaneously deposits on the hydrophilic polysilicon surface, which is completely changed to hydrophobic one. When polysilicon surface is exposed to DDMS solution at room temperature, anti-stiction property and hydrophobicity are clearly comparable to FDTS. DDMS is even superior to MTS in reliability and easy handling, which provides high yield. Since interactions among precursor molecules are reduced, conglomeration both in homogeneous solution and on surface can be effectively avoided. Even the cantilevers of 3 mm in length can be protected successfully from the stiction and the final quality of the modified surfaces is much less dependent on temperature. And no difference was found between the processes in ambient environment and in dry box. In addition, DDMS has advantages of remarkably reduced process time and low cost.
마이크로 전자빔 시스템을 위한 전자광학렌즈의 제작에 의한 나노 패턴 형성
이용재,박정영,전국진,국양,Lee, Yong-Jae,Park, Jung-Yeong,Chun, Kuk-Jin,Kuk, Young 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.9
현재의 전자빔 묘화의 한계를 극복할 수 있는 마이크로 전자빔 시스템의 전자 광학 렌즈를 제작하였고 전자빔 묘화실험을 통하여 이를 검증하였다. 마이크로머시닝기술을 이용하여 실리콘 전극을 제작하고 이를 양극 접합을 통해 조립하여 다층 전극의 전자 광학 렌즈를 제작하였다. 완성된 전자 광학 소자를 초고진공 챔버에 장착하여, STM(Scanning Tunneling Microscope) 팁에서 방출된 전자빔의 focusing 특성을 관찰하였으며 전자를 집속하여 리소그라피를 수행하였다. E-beam 감광막은 PMMA(Poly-methylmethacrylate)를 사용하였고 0.13㎛의 패턴을 형성시킬 수 있었다. We have fabricated electron-optical lens for micro E-beam system that can overcome the limitation of current E-beam lithography. Our electron-optical lens consists of multiple silicon electrodes which were fabricated by micromachining technology and assembled by anodic bonding. The assembled system was installed in UHV chamber to observe the emission characteristics of focused electrons by the electro-optical lens. We used STM(Scanning Tunneling Microscope) tip for electron source. By performing lithography with the focused electrons with PMMA(poly-methylmethacrylate) as E-beam resist. We could draw 0.13${\mu}{\textrm}{m}$ nano-scale lines.
A study on forming a spacer for wafer-level CIS(CMOS Image Sensor) assembly
김일환,나경환,김현철,전국진,Kim, Il-Hwan,Na, Kyoung-Hwan,Kim, Hyeon-Cheol,Chun, Kuk-Jin The Institute of Electronics and Information Engin 2008 電子工學會論文誌-CI (Computer and Information) Vol.45 No.2
본 논문에서는 CMOS 이미지 센서의 웨이퍼 레벨 어셈블리를 위한 스페이스 제작 방법을 설명하였다. 스페이스 제작을 위해서 SU-8, PDMS, Si-interposer를 이용하는 세 가지 방법을 제안하였다. SU-8 스페이스에서는 균일한 두께 특성을 위해서 웨이퍼 회전 장치를 고안했으며, PDMS 스페이스에서는 glass/PDMS/glass 구조의 정렬 접합을 위해서 새로운 접합 방법을 제안하였다. Si-interposer를 이용한 스페이스 제작에서는 DRF을 이용한 접합 조건을 확립하였다. 세 가지의 실험 결과 Si-interposer를 이용한 스페이스 제작 시 glass/스페이스/glass 구조의 접합력이 가장 뛰어났으며, 접합력의 크기는 32.3MPa의 전단응력을 나타내었다. This paper describes the methods of spacer-fabrication for wafer-level CIS(CMOS Image Sensor) assembly. We propose three methods using SU-8, PDMS and Si-interposer for the spacer-fabrication. For SU-8 spacer, novel wafer rotating system is developed and for PDMS(poly-dimethyl siloxane) spacer, new fabrication-method is used to bond with alignment of glass/PDMS/glass structure. And for Si-interposer, DFR(Dry Film Resist) is used as adhesive layer. The spacer using Si-interposer has the strongest bonding strength and the strength is 32.3MPa with shear.
이병렬 ( Byeung Leul Lee ),정진우 ( Jin Woo Jung ),전국진 ( Kuk Jin Chun ) 한국센서학회 2012 센서학회지 Vol.21 No.2
Piezoresistive type contact force sensor array is fabricated by (111) Silicon bulk micromachining for continuous blood pressure monitoring. Length and width of the unit sensor structure is 200 μm and 190 μm, respectively. The gap between sensing elements is only 10 μm. To achieve wafer level packaging, the sensor structure is capped by PDMS soft cap using wafer molding and bonding process with 10 μm alignment precision. The resistance change over contact force was measured to verify the feasibility of the proposed sensor scheme. The maximum measurement range and resolution is 900 mm Hg and 0.57 mm Hg, respectively.
금/주석 공융점 접합과 유리 기판의 건식 식각을 이용한 고주파 MEMS 스위치의 기판 단위 실장
강성찬 ( Sung Chan Kang ),장연수 ( Yeon Su Jang ),김현철 ( Hyeon Cheol Kim ),전국진 ( Kuk Jin Chun ) 한국센서학회 2011 센서학회지 Vol.20 No.1
A low loss radio frequency(RF) micro electro mechanical systems(MEMS) switch driven by a low actuation voltage was designed for the development of a new RF MEMS switch. The RF MEMS switch should be encapsulated. The glass cap and fabricated RF MEMS switch were assembled by the Au/Sn eutectic bonding principle for wafer-level packaging. The through-vias on the glass substrate was made by the glass dry etching and Au electroplating process. The packaged RF MEMS switch had an actuation voltage of 12.5 V, an insertion loss below 0.25 dB, a return loss above 16.6 dB, and an isolation value above 41.4 dB at 6 GHz.
강성찬 ( Sung Chan Kang ),김현철 ( Hyeon Cheol Kim ),전국진 ( Kuk Jin Chun ) 한국센서학회 2011 센서학회지 Vol.20 No.2
This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.