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진공증착법을 이용한 PVDF 유기박막의 제조와 전기전도현상
임응춘,이덕출 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.3
In this study, the PVDF organic thin film was fabricated by the physical vapor deposition method to be dry-process. The distance of heat source and substrate was 5[cm] and the temperature of substrate was 30[.deg. C], when the pressure had reached 2.0 x 10$^{-5}$ [Torr], the temperature of heat source was reached to 285[.deg. C] to heat at 6-8[.deg. C/min] rate, the shutter was opened and deposition was started. TG-DTA(Thermogravimetric-Differential Thermal Analysis) spectrum of PVDF pellets showed that endothermic peak arose at 170[.deg. C] and exothermic peak at 524[.deg. C], but that of thin PVDF film showed that endothermic peak arose at 145[.deg. C] and exothermic peak at 443[.deg C]. The current density was increased linearly with increasing voltage but increased nonlinearly with higher electric field than 250[kV/cm] and activation energy was about 0.667[eV] at the temperature of 30-90[.deg. C].
열증착법을 이용한 PVDF 유기박막의 제조와 분자배향특성
임응춘(E. C. Lim),이덕출(D. C. Lee) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.2
본 연구는 건식 프로세스의 일종인 열증착법을 이용하여 PVDF 유기박막을 제조하는데 있다. 발열원과 기판간의 거리는 5㎝로 하였고, 기판의 온도를 30℃로 유지시키면서 반응조의 진공도가 2.0×10(-5) Torr로 되었을 때 발열원의 온도를 6~8℃/min로 상승시켜, 발열원의 온도가 270℃될 때 셔터(shutter)를 열고 증착을 개시하였다. 전계인가 강도의 증가에 따라 α형 피크들인 530 ㎝^(-1), 795 ㎝^(-1), 977 ㎝^(-1), 1182 ㎝^(-1) 피크는 점점 작아지고 β 피크인 510 ㎝^(-1), 1273 ㎝^(-1) 피크가 증가함을 알 수 있었다. 전계인가강도 71.4 kV/㎝ 이하에서는 530 ㎝^(-1) 피크가 510 ㎝^(-1) 피크의 강도보다 큰 것을 알 수 있는데 이는 β형 성분보다 α형 성분이 필름의 특성을 지배함을 알 수 있다. 이상의 결과로 전계인가 강도의 증가에 따라 PVDF 유기박막의 분자쇄는 α형인 TGT 또는 TGT에서 β형인 평면지그재그 TT형태로 변화함을 알 수 있다. In this study, the PVDF organic thin films were fabricated by thermal evaporation deposition which is one of the dry-processing methods. The distance from heat source to substrate was 5 ㎝. The substrate temperature was maintained at 30℃ during deposition. The working pressure was about 2×10^(-5) Torr and the temperature of heat source was increased at the rate of 6 to 8℃/min. At 270℃, the shutter was opened and the deposition of PVDF has started. As the electrical field intensity increased, α peaks such 530, 795, 977, 1182 ㎝^(-1) decreased, and β peaks such as 510, 1273 ㎝^(-1) increased. The intensity of 530 ㎝^(-1) peak was stronger than that of 510 ㎝^(-1) peak below the 71.4kV/㎝, intensity of electrical field. This result showed the characteristic of film was mainly due to α-mode. According to these results, the molecular structure of PVDF thin film is transformed from α-mode with TGT or TGT to β-mode with planar zigzag structure TT, as increasing of intensity of electrical field.
전춘생,김용운,임응춘,Jhoon, Choon-Saing,Kim, Yong-Woon,Lim, Eung-Choon 한국태양에너지학회 1992 한국태양에너지학회 논문집 Vol.12 No.2
본 논문은 二(이)가열원 진공증착법을 이용하여 실리콘 웨이퍼의 온도를 190[$^{\circ}C$]로 유지한 상태에서 ITO 박막을 증착, 열처리한 후 $ITO_{(n)}/Si_{(p)}$ 태양전지를 제작하였고 그의 전기적 특성을 조사하였다. $In_2O_3$와 $S_nO_2$의 증착비율이 각각 91[mole %] 9[mole %]일 때 최대효율 11[%]의 태양전지를 제작 할 수 있었다. 제작된 전지는 열처리 시간과 온도에 따라 성능이 향상되지만 약 600[$^{\circ}C$] 이상의 온도, 15분 이상의 열처리 시간에서는 오히려 박막의 각종 결함의 증가로 인한 감소현상을 보였다. 제작한 전지의 광 응답 특성을 조사하였는데 열처리온도를 증가시킴에 따라 미소하나마 장파장 영역으로 그 peak값이 이동함을 알 수 있었다. X선 회절현상을 통해 열처리온도에 따른 결정성장이 증대하여 단결정 쪽으로 이동해 감을 확인할 수 있었다. 본 실험에서 제작한 $ITO_{(n)}/Si_{(p)}$ 태양전지에 대하여 특성을 조사한 바 다음과 같은 결과를 얻었다. $100[mW/cm^2]$의 태양광 에너지 조사하에서 단락전류 : ISC=31 $[mW/cm^2]$ 개방전압 : VOC=460[mV] 충실도 : FF=0.71 변환효율 : ${\eta}$=11[%]. The solar cells of $ITO_{(n)}/Si_{(p)}$, which are ITO thin films deposited and heated on Si wafer 190[$^{\circ}C$], were fabricated by two source vaccum deposition method, and their electrical properties were investigated. Its maximum output is obtained when the com- position of the thin film consist of indium oxide 91[mole %] and thin oxide 9[mole %]. The cell characteristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min]. Also, we investigated the spectral response with short circuit current of the cells and found that the increasing of the annealing caused the peak shifted to the long wavelength region. And by experiment of the X-ray diffraction, it is shown to grow the grains of the thin film with increasment of annealing temperature. The test results from the $ITO_{(n)}/Si_{(p)}$ solar cell are as follows. short circuit current : Isc= 31 $[mW/cm^2]$ open circuit voltage : Voc= 460[mV] fill factor : FF=0.71 conversion efficiency : ${\eta}$=11[%]. under the solar energy illumination of $100[mW/cm^2]$.
최진욱,최재형,임응춘,김해종,조전욱,김상현,Choi, Jin-Wook,Choi, Jae-Hyeong,Lim, Eung-Choon,Kim, Hae-Jong,Cho, Jeon-Wook,Kim, Sang-Hyun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.11
It is important that study on cryogenic electrical insulation design to develop the cold dielectric(CD) type HTS cable because the cable is operated under the high voltage environment in cryogenic temperature. This paper proposes two types of insulation design to carry out the maximum insulation design for 154 kV-class HT cable. The proposed insulation design method takes into consideration AC and lightning impulse withstand voltage so as to prevent AC breakdown for power frequency operating voltage during operating the cable and breakdown for lightning impulse voltage. The final insulation thickness is determined by selecting high value out of two insulation thickness calculated through the two insulation design methods. And we researched electrical insulation characteristics of HTS cable according to bending ratio and the number of bending.
플라즈마중합법에 의한 폴리스티렌의 분자구조 제에 및 레지스트 특성 조사
박종관,김영봉,김보열,임응춘,이덕출 대한전기학회 1996 전기학회논문지 Vol.45 No.3
The effect of plasma polymerization conditions on the structure of the plasma polymerized styrene were investigated by using Fourier Transform Infrared Ray(FT-IR), Differential Scanning Calorimetry (DSC), Gel Permeation Chromatography(GPC). Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow-type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of plasma polymerized styrene is 1.41~3.93, and deposition rate of that are 32~383[.angs./min] with discharge power. Swelling and etching resistance becomes more improved with increasing discharge power during plasma polymerization. (author). 11 refs., 10 figs., 1 tab.