http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
D. I. Lee,T. W. Kim,H. Y. Kwon,J. T. Woo,K. H. Yoo,이용탁 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.4
The shape of InAs/GaAs quantum dots (QDs) was modeled to be a half ellipsoid on the basis of a cross-sectional bright-field transmission electron microscopy image. The strains of the vertically stacked QDs with different sizes were numerically calculated by using a three-dimensional finite-difference method (FDM). The deformational part of the potential energy was calculated by using the FDM taking into account normal strain components. These results can help improve understanding of the strains and the potential profiles of vertically stacked InAs/GaAs QDs arrays.
광통신용 1.3 ㎛ Ridge Waveguide Distributed Feedback Laser Diode의 제작과 특성 평가
박경현(K. H. Park),이중기(J. K. Lee),장동훈(D. H. Jang),유지범(J. B. Yoo),강승구(S. K. Kang),김홍만(H. M. Kim),이용탁(Y. T. Lee),박형무(H. M. Park),조호성(H. S. Cho),홍창희(T. Hong) 한국광학회 1994 한국광학회지 Vol.5 No.1
발진파장이 1.3 ㎛인 Ridge Waveguide Distributed Feedback Laser Diode(RWG-DFB-LD)를 제작하고 특성을 평가하였다. 회절격자 형성은 광간섭무늬 노광법을 이용하였고 결정성장은 LPE로 수행하였다. 제작된 RWG-DFB-LD의 발진 임계전류는 67 ㎃이었고, 1296.5 ㎚ 파장에서 측모우드 억제율 30 dB 이상으로 단일 종모우드로 발진하였다. 금지대역폭 측정에 의한 회절격자 결합계수(k)는 40 ㎝-¹로 평가되었다. 소신호 변조특성평가 결과 제작한 RWG-DFB-LD는 1.2 Ith에서 1.99 ㎓의 변조대역폭(f_(-3dB)) 특성을 보였다. We fabricated and characterized RWG-DFB-LDs emitting at 1.3 ㎛ wavelength. For fabrication of the laser diode, inteference fringe of optical beams was used for grating formation and epi layers were grown by LPE. The fablicated RWG-DFB-LD operated in a single longitudinal mode with more than 30 dB SMSR at 1296.5 ㎚ emitting wavelength and its threshold current was 67 ㎃. Coupling coefficient (k) was estimated as 40 ㎝-¹ by means of stop-band measurement. Finally, we show that the RWG-DFB-LD fabricated in this experiment can be applicable as light source of 2.5 Gbps optical communication system from the fact that the small signal response of the RWG-DFB-LD rated up to 1.99 ㎓ at pre-bias level of 1.2Ith.